Sharp GP1S53VJ000F Gap : 5mm, slit : 0.5mm phototransistor output, case package transmissive photointerrupter Datasheet

GP1S53VJ000F
GP1S53VJ000F
Gap : 5mm, Slit : 0.5mm
Phototransistor Output,
Case package Transmissive
Photointerrupter
■ Description
■ Agency approvals/Compliance
GP1S53VJ000F is a standard, phototransistor output,
transmissive photointerrupter with opposing emitter and
detector in a case, providing non-contact sensing. For
this family of devices, the emitter and detector are inserted in a case, resulting in a through-hole design.
1. Compliant with RoHS directive
■ Applications
1. General purpose detection of object presence or motion.
2. Example : Printer, FAX, Optical storage unit
■ Features
1. Transmissive with phototransistor output
2. Highlights :
• Vertical Slit for alternate motion detection
3. Key Parameters :
• Gap Width : 5mm
• Slit Width (detector side) : 0.5mm
• Package : 13.7×10×5.2mm
4. Lead free and RoHS directive compliant
Notice The content of data sheet is subject to change without prior notice.
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
1
Sheet No.: D3-A02601EN
Date Oct. 3. 2005
© SHARP Corporation
GP1S53VJ000F
■ Internal Connection Diagram
Top view
3
1 Anode
2
2 Cathode
4
3 Collector
1
4 Emitter
■ Outline Dimensions
(Unit : mm)
Top view
13.7+0.3
−0.3
5.2
5+0.2
−0.1
Model.
No.
S53
SHARP
mark "S"
A-Aʼ section
10MIN.
10
7.5
3.5
Date code
(Both side)
0.45+0.3
−0.1
A B
Aʼ Bʼ
0.5
1.5
0.5
C1
(2.5)
(Detctor center)
B-B ʼ section
0.4+0.3
−0.1
(10.3)
(2.54)
4
1
3
2
• Unspecified tolerance shall be as follows ;
Dimensions (d)
d≤6
6<d≤18
Tolerance
±0.1
±0.2
• ( ) : Reference dimensions
Product mass : approx. 0.5g
Dip soldering material : Sn−3Ag−0.5Cu
Sheet No.: D2-A02601EN
2
GP1S53VJ000F
Date code (2 digit)
1st digit
Year of production
A.D.
Mark
2000
0
2001
1
2002
2
2003
3
2004
4
2005
5
2006
6
2007
7
2008
8
2009
9
2010
0
:
:
2nd digit
Month of production
Month
Mark
1
1
2
2
3
3
4
4
5
5
6
6
7
7
8
8
9
9
10
X
11
Y
12
Z
repeats in a 10 year cycle
Country of origin
Japan, Indonesia or Philippines
(Indicated on the packing case)
Sheet No.: D2-A02601EN
3
GP1S53VJ000F
■ Absolute Maximum Ratings
Parameter
Symbol
Rating
∗1
Forward current
IF
50
∗1, 2
Peak forward current
IFM
1
Input
Reverse voltage
VR
6
Power dissipation
P
75
Collector-emitter voltage
VCEO
35
Emitter-collector voltage
VECO
6
Output
Collector current
IC
20
∗1
Collector power dissipation
PC
75
Operating temperature
Topr
−25 to +85
Storage temperature
Tstg
−40 to +100
∗3
Soldering temperature
Tsol
260
(Ta=25˚C)
Unit
mA
A
V
mW
V
V
mA
mW
˚C
˚C
˚C
∗
1 Refer to Fig. 1, 2, 3
2 Pulse width ≤ 100μs, Duty ratio=0.01
∗
3 For 5s or less
∗
■ Electro-optical Characteristics
Parameter
Forward voltage
Input Peak forward voltage
Reverse current
Output Collector dark current
Collector current
Transfer
Collector-emitter saturation voltage
characRise time
teristics Response time
Fall time
Symbol
VF
VFM
IR
ICEO
IC
VCE(sat)
tr
tf
Condition
IF=20mA
IFM=0.5A
VR=3V
VCE=20V
VCE=5V, IF=20mA
IF=40mA, IC=0.2mA
VCE=2V, IC=2mA, RL=100Ω
MIN.
−
−
−
0.5
−
−
−
TYP.
1.25
3
−
1
−
−
3
4
(Ta=25˚C)
MAX.
Unit
1.4
V
4
V
10
μA
100
nA
15
mA
0.4
V
15
μs
20
Sheet No.: D2-A02601EN
4
GP1S53VJ000F
Fig.2 Collector Power Dissipation vs.
Ambient Temperature
Fig.1 Forward Current vs. Ambient
Temperature
120
Collector power dissipation PC (mW)
60
Forward current IF (mA)
50
40
30
20
10
0
−25
0
25
50
75 85
Ambient temperature Ta (˚C)
100
80
75
60
40
20
15
0
−25
100
0
Pulse width≤100μs
Ta =25˚C
Ta =75˚C
75 85
100
25˚C
0˚C
− 25˚C
50˚C
1 000
Forward current IF (mA)
Peak forward current IFM (mA)
50
Fig.4 Forward Current vs.
Forward Voltage
Fig.3 Peak Forward Current vs.
Duty Ratio
100
100
10
10
1
10−2
10−1
Duty ratio
0
1
0.5
1
1.5
2
2.5
3
3.5
Foward voltage VF (V)
Fig.5 Collector Current vs.
Forward Current
Fig.6 Collector Current vs.
Collector-emitter Voltage
5
5
Ta=25˚C
VCE= 5V
Ta =25˚C
4
IF =50mA
4
Collector current IC (mA)
Collector current IC (mA)
25
Ambient temperature Ta (˚C)
3
2
1
0
0
10
20
30
40
Forward current IF (mA)
3
30mA
2
20mA
1
10mA
0
50
40mA
0
1
2
3
4
5
6
7
8
9
10
Collector-emitter VCE (V)
Sheet No.: D2-A02601EN
5
GP1S53VJ000F
Fig.7 Collector Current vs.
Ambient Temperature
Fig.8 Collector-emitter Saturation Voltage
vs. Ambient Temperature
3
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC (mA)
IF =20mA
V CE =5V
2
1
0
−25
0
25
50
75
Ambient temperature Ta (˚C)
100
Fig.9 Response Time vs. Load Resistance
100
0.3
0.2
0.1
0
−25
0
25
50
75
Ambient temperature Ta (˚C)
100
Fig.10 Test Circuit for Response Time
VCE= 2V
IC = 2mA
Ta =25˚C
Input
VCC
RD
Response time (μs)
IF =40mA
IC =0.2mA
RL
Output
Input
10
10%
Output
90%
tf
td
td
tr
ts
tr
tf
1
ts
0.1
0.01
0.1
1
Load resistance RL (kΩ)
10
Fig.11 Frequency Response
Fig.12 Collector Dark Current vs.
Ambient Temperature
10−6
5
Voltage gain AV (dB)
0
Collector dark current ICEO (A)
VCE=2V
IC = 2mA
Ta=25˚C
−5
RL =10kΩ
−10
1kΩ 100Ω
VCE=20V
10−7
10−8
10−9
−15
−20
102
103
104
Frequency f (Hz)
105
10−10
−25
106
0
25
50
75
Ambient temperature Ta (˚C)
100
Sheet No.: D2-A02601EN
6
GP1S53VJ000F
Fig.13 Detecting Position Characteristics (1)
IF=20mA, VCE=5V
Ta=25˚C
L
Shield
−
0
0
−2.5 −2 −1.5 −1 −0.5 0 0.5 1 1.5
Shield moving distance L (mm)
+
−
L
Sensor
50
IF=20mA, VCE=5V
Ta=25˚C
Shield
100
Relative collector current (%)
Relative collector current (%)
100
Fig.14 Detecting Position Characteristics (2)
0
+
Sensor
50
0
2
2.5
−2
0
−1
1
Shield moving distance L (mm)
2
Remarks : Please be aware that all data in the graph are just for reference and not for guarantee.
Sheet No.: D2-A02601EN
7
GP1S53VJ000F
■ Design Considerations
● Design guide
1) Prevention of detection error
To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to
the external light.
2) Position of opaque board
Opaque board shall be installed at place 4mm or more from the top of elements.
(Example)
4mm or more
This product is not designed against irradiation and incorporates non-coherent IRED.
● Degradation
In general, the emission of the IRED used in photocouplers will degrade over time.
In the case of long term operation, please take the general IRED degradation (50% degradation over 5
years) into the design consideration.
● Parts
This product is assembled using the below parts.
• Photodetector (qty. : 1)
Category
Material
Maximum Sensitivity
wavelength (nm)
Sensitivity
wavelength (nm)
Response time (μs)
Phototransistor
Silicon (Si)
800
400 to 1 200
3
• Photo emitter (qty. : 1)
Category
Material
Maximum light emitting
wavelength (nm)
I/O Frequency (MHz)
Infrared emitting diode
(non-coherent)
Gallium arsenide (GaAs)
950
0.3
• Material
Case
Lead frame plating
Black NORYL resin
Solder dip. (Sn−3Ag−0.5Cu)
Sheet No.: D2-A02601EN
8
GP1S53VJ000F
■ Manufacturing Guidelines
● Soldering Method
Flow Soldering:
Soldering should be completed below 260˚C and within 5 s.
Please take care not to let any external force exert on lead pins.
Please don't do soldering with preheating, and please don't do soldering by reflow.
Hand soldering
Hand soldering should be completed within 3 s when the point of solder iron is below 350̊C.
Please solder within one time.
Please don't touch the terminals directly by soldering iron.
Soldered product shall treat at normal temperature.
Other notice
Please test the soldering method in actual condition and make sure the soldering works fine, since the
impact on the junction between the device and PCB varies depending on the cooling and soldering
conditions.
Flux
Some flux, which is used in soldering, may crack the package due to synergistic effect of alcohol in flux and
the rise in temperature by heat in soldering. Therefore, in using flux, please make sure that it does not have
any influence on appearance and reliability of the photointerrupter.
Sheet No.: D2-A02601EN
9
GP1S53VJ000F
● Cleaning instructions
Solvent cleaning :
Solvent temperature should be 45˚C or below. Immersion time should be 3 minutes or less.
Ultrasonic cleaning :
The affect to device by ultrasonic cleaning is different by cleaning bath size, ultrasonic power output,
cleaning time, PCB size or device mounting condition etc.
Please test it in actual using condition and confirm that doesn't occur any defect before starting the ultrasonic
cleaning.
Recommended solvent materials :
Ethyl alcohol, Methyl alcohol and Isopropyl alcohol.
● Presence of ODC
This product shall not contain the following materials.
And they are not used in the production process for this product.
Regulation substances : CFCs, Halon, Carbon tetrachloride, 1.1.1-Trichloroethane (Methylchloroform)
Specific brominated flame retardants such as the PBBOs and PBBs are not used in this product at all.
This product shall not contain the following materials banned in the RoHS Directive (2002/95/EC).
•Lead, Mercury, Cadmium, Hexavalent chromium, Polybrominated biphenyls (PBB), Polybrominated
diphenyl ethers (PBDE).
Sheet No.: D2-A02601EN
10
GP1S53VJ000F
■ Package specification
● Case package
Package materials
Anti-static plastic bag : Polyethtylene
Moltopren : Urethane
Partition : Corrugated fiberboard
Packing case : Corrugated fiberboard
Package method
100 pcs of products shall be packaged in a plastic bag, Ends shall be fixed by stoppers. The bottom ot the
packing case is covered with moltopren, and the partition is set in the packing case. Each partition should
have 1 plastic bag.
The 10 plastic bags containing a product are put in the packing case.
Moltopren should be located after all product are settled (1 packing contains 1 000 pcs).
Packing composition
Moltopren
Partition
Anti-static
plastic bag
Packing case
Sheet No.: D2-A02601EN
11
GP1S53VJ000F
■ Important Notices
· The circuit application examples in this publication
are provided to explain representative applications of
SHARP devices and are not intended to guarantee any
circuit design or license any intellectual property rights.
SHARP takes no responsibility for any problems related
to any intellectual property right of a third party resulting
from the use of SHARP's devices.
with equipment that requires higher reliability such as:
--- Transportation control and safety equipment (i.e.,
aircraft, trains, automobiles, etc.)
--- Traffic signals
--- Gas leakage sensor breakers
--- Alarm equipment
--- Various safety devices, etc.
(iii) SHARP devices shall not be used for or in
connection with equipment that requires an extremely
high level of reliability and safety such as:
--- Space applications
--- Telecommunication equipment [trunk lines]
--- Nuclear power control equipment
--- Medical and other life support equipment (e.g.,
scuba).
· Contact SHARP in order to obtain the latest device
specification sheets before using any SHARP device.
SHARP reserves the right to make changes in the
specifications, characteristics, data, materials, structure,
and other contents described herein at any time
without notice in order to improve design or reliability.
Manufacturing locations are also subject to change
without notice.
· If the SHARP devices listed in this publication fall
within the scope of strategic products described in the
Foreign Exchange and Foreign Trade Law of Japan, it
is necessary to obtain approval to export such SHARP
devices.
· Observe the following points when using any devices
in this publication. SHARP takes no responsibility for
damage caused by improper use of the devices which
does not meet the conditions and absolute maximum
ratings to be used specified in the relevant specification
sheet nor meet the following conditions:
(i) The devices in this publication are designed for use
in general electronic equipment designs such as:
--- Personal computers
--- Office automation equipment
--- Telecommunication equipment [terminal]
--- Test and measurement equipment
--- Industrial control
--- Audio visual equipment
--- Consumer electronics
(ii) Measures such as fail-safe function and redundant
design should be taken to ensure reliability and safety
when SHARP devices are used for or in connection
· This publication is the proprietary product of SHARP
and is copyrighted, with all rights reserved. Under
the copyright laws, no part of this publication may be
reproduced or transmitted in any form or by any means,
electronic or mechanical, for any purpose, in whole or in
part, without the express written permission of SHARP.
Express written permission is also required before any
use of this publication may be made by a third party.
· Contact and consult with a SHARP representative
if there are any questions about the contents of this
publication.
Sheet No.: D2-A02601EN
[H151]
12
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