Sharp GP2S26 Subminiature photointerrupter Datasheet

GP2S09/GP2S24/GP2S26/GP2S27
Subminiature
Photointerrupter
GP2S09/GP2S24/
GP2S26/GP2S27
■ Features
■ Applications
1. Compact and thin
GP2S09 : Compact DIP long lead type
GP2S24 : Compact DIP type
GP2S26: Flat lead type
GP2S27: Mini-flat package type
1. Cassette tape recorders, VCRs
2. Floppy disk drives
3. Various microcomputerized control equipment
2. Optimum detection distance: 0.6 to 0.8mm
3. Visible light cut-off type
■ Outline Dimensions
C0.7
❈ 4.0 ± 0.2
12.5
(4.0)
(4.0)
∗Tolerance:± 0.15mm
∗( ) : Reference dimensions
∗The dimensions indicated by ❈ refer
to those measured from the lead base.
0.4+-
0.2
0.1
13.0 ± 1.0
∗Tolerance:± 0.15mm
∗( ): Reference dimensions
4.0 -
0.4
+ 0.2
0.1
4
1.75
+ 0.2
0.1
3.0 +- 0.2
0.1
3
1
2
+
3.0 - 0.2
0.1
0.15 -
0.2
0.1
4
1 C0.7
3
1.7
0.4+-
2
( 0.2 ) Emitter center
2
Internal connection diagram
( Common to 4 models )
1.7
1
0.75
3
± 30˚
4
( 0.4 ) Detector center
( 0.4 ) Detector center
1.75
± 20 ˚
0.75
θ
θ : 0 to 20˚
∗Tolerance:± 0.15mm
∗( ): Reference dimensions
∗The dimensions indicated by ❈ refer
to those measured from the lead base.
± 15 ˚
GP2S27
+
0.15 - 0.2
0.1
( 0.2 ) Emitter center
GP2S26
C0.7
4 - 0.15 +- 0.2
0.1
4 - 0.4 +- 0.2
0.1
4 - 0.2 +- 0.3
0
θ
θ : 0 to 20˚
±15˚
1.7
0.75
0.8
1.7
± 1.0
4 - (0.6)
4 - 0.5 +- 0.2
0.1
❈ 4.0± 0.2
3.0 +- 0.2
0.1
4.0 +- 0.2
0.1
3.0 +- 0.2
0.1
± 0.15
4.0 +0.2
- 0.1
1 1.75 2
+
1 1.75 2
3
3.5 - 1.0
0
C0.7
4
( 0.4 ) Detector center
3
( 0.2 ) Emitter center
4
( Unit : mm )
GP2S24
( 0.4 ) Detector center
( 0.2 ) Emitter center
GP2S09
(0.4)
5.0MAX.
∗Tolerance:± 0.15mm
∗( ) : Reference dimensions
1
2
3
4
Anode
Emitter
Collector
Cathode
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
GP2S09/GP2S24/GP2S26/GP2S27
■ Absolute Maximum Ratings
Parameter
Forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissiipation
Total power dissipation
Operating temperature
Storage temperature
∗1
Soldering temperature
Input
Output
( Ta = 25˚C)
Symbol
IF
VR
P
V CEO
V ECO
IC
PC
P tot
T opr
T stg
T sol
Rating
50
6
75
35
6
20
75
100
- 20 to + 85
- 40 to + 100
260
Unit
mA
V
mW
V
V
mA
mW
mW
˚C
˚C
˚C
∗1 Within 5 seconds ( Soldering areas for each model are shown below )
1mm∗2
GP2S09, GP2S24
Soldering area:
The hatched area more than
1mm ∗2 away from the lower
edge of package as shown
in the figure below.
GP2S27
Soldering area
The hatched area more than
0.5mm away from the both
edges of package as shown
in the figure below.
GP2S26
Soldering area:
The hatched area more than
2.0mm away from the both
edges of package as shown
in the figure below.
∗2 GP2S09: 4mm
2.0mm
2.0mm
0.5mm
■ Electro-optical Characteristics
Input
Output
Transfer
characteristics
Parameter
Forward voltage
Reverse current
Collector dark current
∗3
Collector current
Response time
∗4
Rise time
Fall time
Leak current
( Ta = 25˚C )
Symbol
VF
IR
I CEO
IC
tr
tf
I LEAK
Conditions
I F = 20mA
V R = 6V
V CE = 20V
I F = 4mA, V CE = 2V
V CE = 2V, I C = 100 µ A
R L = 1kΩ , d = 1mm
I F = 4mA, V CE = 2V
MIN.
20
-
TYP.
1.2
10- 9
45
20
20
-
∗3 The condition and arrangement of the reflective object are shown below.
∗4 Without reflective object
The ranking of collector current shall be classified into the following 6 ranks.
(GP2S09, GP2S24, GP2S26, GP2S27 )
Rank
A
B
C
A or B
B or C
A, B or C
∗5
Collector-current I C ( µ A )
20 to 42
34 to 71
58 to 120
20 to 71
34 to 120
20 to 120
∗5 GP2S24 and GP2S26 and GP2S27 don't
have A rank.
0.5mm
Test Condition and
Arrangement for
Collector Current
Al evaporation
1mm-thick glass
MAX.
1.4
10
10 - 7
120
100
100
0.1
Unit
V
µA
A
µA
µs
µs
µA
GP2S09/GP2S24/GP2S26/GP2S27
Fig. 2 Power Dissipation vs.
Ambient Temperature
60
120
50
100
P tot
Power dissipation P ( mW )
Forward current I F ( mA )
Fig. 1 Forward Current vs.
Ambient Temperature
40
30
20
10
0
25
50
75
Ambient temperature T
a
85
T a = 75˚C
50˚C
25˚C
V CE = 2V
T a = 25˚C
600
0˚C
- 25˚C
Collector current I C ( µ A)
100
100
Fig. 4 Collector Current vs.
Forward Current
700
200
50
75 85
0
25
Ambient temperature T a ( ˚C)
( ˚C)
500
Forward current I F ( mA )
40
0
- 25
100
Fig. 3 Forward Current vs.
Forward Voltage
50
20
10
5
500
400
300
200
100
2
1
0
0
0.5
1
1.5
Forward voltage V F
2
( V)
2.5
0
3
350
30
I F = 4mA
VCE = 2V
I F = 15mA
250
10mA
200
150
10
15
20
25
Forward current I F ( mA )
120
Relatlve collector current I C ( % )
Ta =
25˚C
5
Fig. 6 Relatlve Collector Current vs.
Ambient Temperature
Fig. 5 Collector Current vs.
Collector-Emitter Voltage
Collector current I C ( µ A)
60
20
0
- 25
300
P, P C
80
7mA
100
4mA
50
100
80
60
40
20
2mA
0
0
2
4
6
8
10
Collector-emitter voltage V CE ( V)
12
0
- 25
0
25
50
Ambient temperature T
a
75
( ˚C)
100
GP2S09/GP2S24/GP2S26/GP2S27
Fig. 7 Collector Dark Current vs.
Ambient Temperature
10 - 6
5
Fig. 8 Response Time vs. Load Resistance
( GP2S09 )
100
V CE = 20V
50
Collector dark current I CEO ( A)
2
V CE = 2V
I C = 100 µA
T a = 25˚C
tr
20
10 - 7
Response time (µ s )
5
2
10 - 8
5
2
10 - 9
tf
td
10
5
2
ts
1
0.5
5
0.2
2
10 - 10
0
25
50
Ambient temperature T
a
75
( ˚C)
0.1
0.01 0.02 0.05 0.1 0.2
0.5 1 2
Load resistance R L ( kΩ )
100
5
10
Fig. 9 Response Time vs. Load Resistance
(GP2S24/ GP2S26/GP2S27 )
Test Circuit for Response Time
500 V CE = 2V
I C = 100 µA
200 T a = 25˚C
100
50
20
10
5
tr
tf
VCC
Input
td
Input
Output
ts
80
90%
td
tr
1
10
100
Load resistance R L ( kΩ )
ts
tf
1000
Fig.10 Relative Collector Current vs.
Distance between Sensor and
Al Evaporation Glass
100
10%
Output
2
1
0.5
0.2
0.1
0.1
Relative collector current ( % )
RL
RD
Fig.11 Relative Collector Current vs.
Card Moving Distance ( 1 )
100
I F = 4mA
V CE = 2V
T a = 25˚C
60
40
20
0
3
0
1
2
4
5
Distance between sensor and Al evaporation glass d ( mm )
Relative collector current ( % )
Response time (µ s )
1000
80
I F = 4mA
V CE = 2V
d = 1mm
T a = 25˚C
60
40
20
0
1
3
5
0
2
4
Card moving distance L ( mm )
6
7
GP2S09/GP2S24/GP2S26/GP2S27
Test Condition for Distance & Detecting Position
Characteristics ( EX : GP2S24 )
Fig.12 Relative Collector Current vs.
Card Moving Distance ( 2 )
Relative collector current ( % )
100
80
Al evaporated glass
Correspond to Fig.10
I F = 4mA
V CE = 2V
d= 1mm
T a = 25˚C
60
d
Correspond to Fig.11
Correspond to Fig.12
Test condition
IF = 4mA
VCE = 2V
d = 1mm
Test condition
IF = 4mA
VCE = 2V
d = 1mm
40
OMS card
White
20
d
OMS card
Black
Lmm
White
Black
d
Lmm
0
-2
-1
0
1
2
3
4
Card moving distance L ( mm )
5
6
+
Fig.13-a Frequency Response
(GP2S09 )
V CE = 2V
I C = 100 µA
T a = 25˚C
-5
RL = 10kΩ
-
L= 0
+
-
V CE = 2V
I C = 100µ A
T a = 25˚C
0
Voltage gain A V ( dB )
Voltage gain A V ( dB )
0
L= 0
Fig.13-b Frequency Response
(GP2S24/ GP2S26/ GP2S27)
1kΩ
- 10
-5
RL = 10kΩ
- 10
1kΩ
- 15
- 15
- 20
102 2
5
5
103 2
104 2
Frequency f ( Hz )
5
- 20
102
105
103
104
105
Frequency f ( Hz )
106
Fig.14 Spectral Sensitivity
( Detecting Side )
100
T a = 25˚C
Relative sensitivity ( % )
80
60
●
40
20
0
600
700
800
900
1000
Wavelength λ ( nm )
1100
1200
Please refer to the chapter “ Precautions for Use ” .
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