SSC GR3K Fast recovery surface mount rectifier Datasheet

GR3K
FAST RECOVERY SURFACE
MOUNT RECTIFIERS
PRODUCT SUMMARY
Reverse Voltage 50 to 1000 Volts
Forward current 3.0 Amperes
FEATURES
For surface mounted application
Glass passivated junction chip
Built-in strain relief, ideal for automated placement
Plastic material used carries Underwriters Laboratory
Classification 94V-O
Fast switching for high efficiency
High temperature soldering:
o
250 C /10 seconds at terminals
MECHANICAL DATA
Cases: Molded plastic
Terminals: Solder plated
Polarity: Indicated by cathode band
Weight: 0.007 ounce, 0.21 gram
Pb-free; RoHS-compliant
07/04/2007 Rev.1.00
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GR3K
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
o
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Parameter
Symbols
GR3A
GR3B
GR3D
GR3G
GR3J
GR3K
GR3M
Units
Maximum repetitive peak reverse voltage
VRRM
50
100
200
400
600
800
1000
Volts
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
Volts
50
100
200
400
600
800
1000
Volts
Maximum DC blocking voltage
VDC
Maximum average forward rectified current
See Fig. 1 @ TL=75oC
I(AV)
3.0
Amps
Peak forward surge current, 8.3 ms single half sinewave superimposed on rated load (JEDEC method)
IFSM
100.0
Amps
Maximum instantaneous forward voltage @ 3.0A
VF
1.3
Volts
IR
10.0
250
uA
Maximum DC reverse current
at rated DC blocking voltage
@TA=25oC
@TA=125oC
Maximum reverse recovery time (Note 1)
trr
Typical junction capacitance (Note 2)
CJ
75
RθJA
RθJL
50.0
15.0
TJ
-55 to +150
o
C
-55 to +150
o
C
Typical thermal resistance (Note 3)
Operating temperature range
Storage temperature range
Notes:
TSTG
150
250
500
nS
pF
o
C/W
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and Applied VR=4.0 Volts
3. Thermal Resistance from Junction to Ambient and from Junction to Lead Mounted on P.C.B. with 0.3" x 0.3" ( 8.0 x 8.0 mm ) Copper Pad Areas.
07/04/2007 Rev.1.00
www.SiliconStandard.com
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GR3K
RATINGS AND CHARACTERISTIC CURVES
o
(TA=25 C unless otherwise noted )
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07/04/2007 Rev.1.00
www.SiliconStandard.com
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