1N119WS SILICON EPITAXIAL PLANAR DIODE APPLICATIONS ․High speed switching PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 W2 Top View Marking Code: "W2" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Peak Reverse Voltage VRM 85 V Reverse Voltage VR 80 V Average Forward Current IO 100 mA Peak Forward Current IFM 300 mA Non-repetitive Peak Forward Current (t = 1 μs) IFSM 4 A Junction Temperature TJ 125 O Storage Temperature Range Tstg - 55 to + 125 O Symbol Max. Unit Forward Voltage at IF = 10 mA at IF = 100 mA VF 0.8 1.2 V Reverse Current at VR = 80 V IR 0.1 µA Capacitance between Terminals at VR = 0 V, f = 1 MHz CT 2 pF Reverse Recovery Time at VR = 6 V, IF = 10 mA, RL = 50 Ω trr 3 ns C C Characteristics at Ta = 25 OC Parameter SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/04/2009 1N119WS SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/04/2009 1N119WS PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-323 A c HE A D E bp UNIT A bp C D E HE mm 1.10 0.80 0.40 0.25 0.15 0.00 1.80 1.60 1.35 1.15 2.80 2.30 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/04/2009