GTM GSBAS70 Surface mount schottky barrier diode Datasheet

CORPORATION
ISSUED DATE :2005/12/29
REVISED DATE :
G SB AS70/ A/C/S
Description
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E
V O LT A G E 7 0 V, C U R R E N T 7 0 m A
These Schottky barrier diodes are designed for high speed switching applications, circuit protection and
voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is
excellent for hand held and portable applications where space is limited.
Package Dimensions
Millimeter
Min.
Max.
0.80
1.10
0
0.10
0.80
1.00
1.80
2.20
1.15
1.35
1.80
2.40
REF.
A
A1
A2
D
E
HE
Millimeter
Min.
Max.
0.42 REF.
0.15
0.35
0.25
0.40
0.10
0.25
0.65 REF.
0.15 BCS.
REF.
L1
L
b
c
e
Q1
Absolute Maximum Ratings at TA = 25
Parameter
Symbol
Operating Junction Temperature
Ratings
Unit
Tj
+125
Storage Temperature
Tstg
-65 ~ +125
Maximum Repetitive Peak Reverse Voltage
VRRM
70
V
Io
70
mA
IFSM
100
mA
R
445
/W
225
mW
Maximum Average Forward Rectified Current
Non- Repetitive Peak Forward Surge Current @ tp
1.0s
Thermal Resistance Junction to Ambient Air
Total Power Dissipation
PD
Electrical Characteristics (at TA = 25
Parameter
Reverse Breakdown Voltage
Forward Voltage
unless otherwise noted)
Symbol
Min.
Typ.
V(BR)R
70
-
VF
Max.
Unit
-
-
V
-
410
-
-
750
-
-
1000
Test Conditions
IR=10 A
IF1=1mA
mV
IF1=10mA
IF2=15mA
-
100
nA
VR1=50V
-
10
uA
VR2=70V
-
2.0
pF
VR=0V, f=1MHz
-
5.0
ns
IF=IR=10mA, RL =100 , Irr=1mA
Reverse Leakage Current
IR
Total Capacitance
CT
-
Reverse Recover Time
Trr
-
GSAS70/A/C/S
JA
Page: 1/2
CORPORATION
ISSUED DATE :2005/12/29
REVISED DATE :
Characteristics Curve
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GSAS70/A/C/S
Page: 2/2
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