CORPORATION GSD965 ISSUED DATE :2004/04/05 REVISED DATE :2004/11/29B NPN EPITAXIAL PLANAR T RANSISTOR Description The GSD965 is designed for use as AF output amplifier and flash unit Package Dimensions D E TO-92 A S1 b1 SE A TING P LA NE Millimeter L REF. e1 C b e Min. Max. REF. Millimeter Min. Max. A 4.45 4.7 D 4.44 4.7 S1 1.02 - E 3.30 3.81 b 0.36 0.51 L 12.70 - b1 0.36 0.76 e1 1.150 1.390 C 0.36 0.51 e 2.42 2.66 Absolute Maximum Ratings at Ta = 25 Collector to Base Voltage BVCBO 40 V Collector to Emitter Voltage BVCEO 20 V Emitter to Base Voltage BVEBO 7.0 V Collector Current (Continuous) IC 5 A Collector Current (Peak PT=10mS) IC 8 A Junction Temperature Tj +150 Tstg -55 ~ +150 PD 0.75 Storage Temperature Total Power Dissipation at Ta = 25 W Characteristics at Ta = 25 Min. Typ. Max. Unit BVCBO Symbol 40 - - V IC=100uA Test Conditions BVCEO 20 - - V IC=1mA BVEBO 7 - - V IE=10uA ICBO - - 0.1 uA VCB=60V IEBO - - 0.1 uA VEB=7V *VCE(sat) - 0.35 1 V *hFE1 230 - 800 *hFE2 IC=3A, IB=0.1A VCE=2V, IC=0.5A 150 - - fT - 150 - MHz VCE=2V, IC=2A VCE=6V, IE=50mA Cob - - 50 pF VCB=20V, f=1MHz * Pulse Test: Pulse Width 380us, Duty Cycle Classification Of hFE1 Rank Q R S Range 230-380 340-600 560-800 2% 1/2 CORPORATION ISSUED DATE :2004/04/05 REVISED DATE :2004/11/29B Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 2/2