GTM GSD965A

CORPORATION
GSD965A
ISSUED DATE :2005/02/04
REVISED DATE :
NP N E PITAX I AL P L ANAR T RANS ISTO R
Description
The GSD965A is designed for use as AF output amplifier and flash unit.
Package Dimensions
D
TO-92
E
A
S1
b1
S E A T IN G
PLANE
Millimeter
Min.
Max.
4.45
4.7
1.02
0.36
0.51
0.36
0.76
0.36
0.51
L
REF.
e1
C
b
e
A
S1
b
b1
C
REF.
D
E
L
e1
e
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
1.150
1.390
2.42
2.66
Absolute Maximum Ratings at Ta = 25
Collector to Base Voltage
BVCBO
40
V
Collector to Emitter Voltage
BVCEO
30
V
Emitter to Base Voltage
BVEBO
7.0
V
Collector Current (Continuous)
IC
5
A
Collector Current (Peak PT=10mS)
IC
8
A
Junction Temperature
Tj
+150
Tstg
-55 ~ +150
PD
0.75
Storage Temperature
Total Power Dissipation at Ta = 25
W
Characteristics at Ta = 25
Min.
Typ.
Max.
Unit
BVCBO
Symbol
40
-
-
V
IC=100uA
Test Conditions
BVCEO
30
-
-
V
IC=1mA
BVEBO
7
-
-
V
IE=10uA
ICBO
-
-
0.1
uA
VCB=60V
IEBO
-
-
0.1
uA
VEB=7V
*VCE(sat)
-
0.35
1
V
*hFE1
230
-
800
*hFE2
IC=3A, IB=0.1A
VCE=2V, IC=0.5A
150
-
-
fT
-
150
-
MHz
VCE=2V, IC=2A
VCE=6V, IE=50mA
Cob
-
-
50
pF
VCB=20V, f=1MHz
* Pulse Test: Pulse Width 380us, Duty Cycle
2%
Classification Of hFE1
Rank
Q
R
S
Range
230-380
340-600
560-800
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CORPORATION
ISSUED DATE :2005/02/04
REVISED DATE :
Characteristics Curve
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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