GT20J101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Preliminary GT20J101 High Power Switching Applications Unit: mm • The 3rd Generation • Enhancement-Mode • High Speed: tf = 0.30 µs (max) • Low Saturation Voltage: VCE (sat) = 2.7 V (max) Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES ±20 V DC IC 20 1 ms ICP 40 PC 130 W Tj 150 °C Tstg −55~150 °C Collector current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range A JEDEC ― JEITA ― TOSHIBA 2-16C1C Weight: 4.6 g 1 2002-01-18 GT20J101 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES VGE = ±20 V, VCE = 0 ±500 nA Collector cut-off current ICES VCE = 600 V, VGE = 0 1.0 mA VGE (OFF) IC = 2 mA, VCE = 5 V 5.0 8.0 V VCE (sat) IC = 20 A, VGE = 15 V 2.1 2.7 V VCE = 20 V, VGE = 0, f = 1 MHz 1450 pF Inductive Load 0.12 VCC = 300 V, IC = 20 A 0.40 VGG = ±15 V, RG = 56 Ω 0.15 0.30 0.50 0.96 Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Switching time Cies Rise time tr Turn-on time ton Fall time tf Turn-off time toff Thermal resistance (Note1) Rth (j-c) µs °C/W Note1: Switching time measurement circuit and input/output waveforms VGE GT20J301 90% 10% 0 −VGE IC L RG IC VCC 90% 90% VCE 0 VCE 10% 10% 10% td (on) td (off) 10% tr tf toff ton Note2: Switching loss measurement waveforms VGE 90% 10% 0 IC 0 10% VCE Eoff Eon 2 2002-01-18 GT20J101 IC – VCE VCE – VGE 50 20 20 Common emitter 15 13 IC Collector-emitter voltage VCE (A) 40 Collector current 30 12 20 10 0 VGE = 10 V 0 1 2 3 4 Collector-emitter voltage VCE Tc = −40°C (V) Common emitter Tc = 25°C 16 12 8 10 4 4 (V) 8 (V) Common emitter 16 12 8 10 20 40 IC = 5 A 4 0 4 Tc = 125°C (V) Tc = 25°C Collector-emitter voltage VCE (V) VGE 20 20 Common emitter Collector-emitter voltage VCE 16 VCE – VGE VCE – VGE 8 12 Gate-emitter voltage 16 VGE 16 12 8 20 4 IC = 5 A 4 8 12 Gate-emitter voltage (V) IC – VGE 16 VGE 20 (V) VCE (sat) – Tc 4 Common emitter Common emitter Collector-emitter saturation voltage VCE (sat) (V) VCE = 5 V IC (A) 40 30 20 25 10 Tc = 125°C 0 0 40 10 0 0 20 50 Collector current 12 Gate-emitter voltage 20 0 40 IC = 5 A 0 0 5 20 4 8 −40 12 Gate-emitter voltage 16 VGE VGE = 15 V 3 30 2 (V) 20 10 IC = 5 A 1 0 −60 20 40 −20 20 60 Case temperature Tc 3 100 140 (°C) 2002-01-18 GT20J101 Switching time ton, tr – RG Switching time ton, tr – IC 3 Common emitter VCC = 300 V VGG = ±15 V IC = 20 A : Tc = 25°C : Tc = 125°C Common emitter VCC = 300 V VGG = ±15 V RG = 56 Ω : Tc = 25°C : Tc = 125°C ton, tr (µs) ton 0.3 tr Switching time (µs) 0.5 Switching time 1 ton, tr 3 0.1 1 0.5 0.3 ton 0.1 0.05 0.03 tr 0.05 0.03 3 10 30 100 300 Gate resistance RG 0.01 1000 0 4 (Ω) 0.1 0.05 100 300 1 10 (mJ) 0.1 Common emitter VCC = 300 V VGG = ±15 V RG = 56 Ω : Tc = 25°C : Tc = 125°C 0.05 0.03 4 10 100 8 Switching loss Eon, Eoff – RG Gate resistance RG tf 12 Collector current 3 Eon 1 Eoff 0.3 0.1 toff 0.3 0.01 0 1000 Switching loss 1 (A) 0.5 (Ω) Common emitter VCC = 300 V VGG = ±15 V IC = 20 A : Tc = 25°C : Tc = 125°C Note2 3 1 (mJ) 30 Switching loss 10 Eon, Eoff Switching time tf Gate resistance RG Switching loss (µs) toff, tf toff 0.3 10 IC Switching time toff, tf – IC 0.5 0.03 3 20 16 3 Common emitter VCC = 300 V VGG = ±15 V IC = 20 A : Tc = 25°C : Tc = 125°C Eon, Eoff (µs) toff, tf Switching time 1 12 Collector current Switching time toff, tf – RG 3 8 (Ω) 20 Eon, Eoff – IC Common emitter VCC = 300 V VGG = ±15 V RG = 56 Ω : Tc = 25°C : Tc = 125°C Note2 Eon Eoff 0.1 0.03 0 4 8 Collector current 4 16 (A) 0.3 0.01 1000 IC 12 IC 16 20 (A) 2002-01-18 GT20J101 VCE, VGE – QG C – VCE 5000 500 3000 100 30 Coes Common emitter 10 VGE = 0 f = 1 MHz 5 0.5 Cres Tc = 25°C 1 3 10 30 100 300 Collector-emitter voltage VCE 1000 300 IC max (pulsed)* 4 100 20 (V) 60 QG 0 100 80 (nC) Reverse bias SOA 50 50 µs* 30 IC max 10 (continuous) IC (A) 100 µs* 1 ms* 5 Collector current (A) IC 40 Gate charge 10 ms* 30 Collector current 8 100 50 DC operation 3 200 VCE = 100 V 200 Safe operating area 100 12 300 0 0 3000 16 (V) RL = 15 Ω Tc = 25°C VGE 400 Gate-emitter voltage (V) 300 C (pF) Collector-emitter voltage VCE Cies 1000 Capacitance 20 Common emitter 1 0.5 *: Single nonrepetitive pulse Tc = 25°C 0.3 Curves must be derated linearly with increase in temperature. 0.1 1 3 10 30 10 5 3 1 0.5 Tj < = 125°C 0.3 VGE = ±15 V 0.1 100 300 Collector-emitter voltage VCE 1000 3000 RG = 56 Ω 1 3 10 30 100 300 Collector-emitter voltage VCE (V) 1000 3000 (V) Rth (t) – tw Transient thermal impedance Rth (t) (°C/W) 10 10 10 10 10 10 10 2 1 0 −1 −2 −3 −4 10 Tc = 25°C −5 10 −4 10 −3 10 −2 Pulse width 10 −1 tw 10 0 10 1 10 2 (s) 5 2002-01-18 GT20J101 RESTRICTIONS ON PRODUCT USE 000707EAA • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. • The information contained herein is subject to change without notice. 6 2002-01-18