HSMC H01N60S N-channel power field effect transistor Datasheet

HI-SINCERITY
Spec. No. : MOS200501
Issued Date : 2005.01.01
Revised Date : 2005.09.28
Page No. : 1/5
MICROELECTRONICS CORP.
H01N60S Series
N-Channel Power Field Effect Transistor
H01N60S Series Pin Assignment
Tab
Description
1
This high voltage MOSFET uses an advanced termination scheme to
provide enhanced voltage-blocking capability without degratding
performance over time. In addition, this advanced MOSFET is designed to
withstand high energy in avalanche and commutation modes. The new
energy efficient design also offers a drain-to-source diode with a fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional and saafety margin against unexpected voltage transients.
Features
2
3-Lead Plastic TO-252
Package Code: J
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3
Tab
1
2
3-Lead Plastic TO-251
Package Code: I
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3
D
H01N60S Series
Symbol:
G
S
• 1A, 600V, RDS(on)=12Ω@VGS=10V
• Low Gate Charge 15nC(Typ.)
• Low Crss 4pF(Typ.)
• Fast Switching
• Improved dv/dt Capability
Absolute Maximum Ratings
Symbol
VDSS
ID
Parameter
Drain-Source Voltage
Drain Current (Continuous TC=25oC)
o
Drain Current (Continuous TC=100 C)
*1
H01N60SI / H01N60SJ
Units
600
V
1
A
0.6
A
4
A
IDM
Drain Current (Pulsed)
VGS
Gate-Source Voltage
±30
V
EAS
Single Pulse Avalanche Energy
(L=59mH, IAS=1.1A, VDD=50V, RG=25Ω, Starting TJ=25°C)
50
mJ
IAR
Avalanche Current *1
1
A
EAR
Repetitive Avalanche Energy
2.8
mJ
4.5
V/nS
dv/dt
VGS
Peak Diode Recovery dv/dt
*2
±20
V
o
2.5
W
o
28
W
0.22
W/°C
-55 to +150
°C
300
°C
Gate-to-Source Voltage (Continue)
Total Power Dissipation (TA=25 C)
PD
Total Power Dissipation (TC=25 C)
Derate above 25°C
Tj, Tstg
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purposes, 1/8”
from case for 5 seconds
*1: Repetitive Rating : Pulse width limited by maximum junction temperature
*2: ISD≤1.1A, di/dt≤200A/us, VDD≤BVDSS, Starting TJ=25oC
H01N60SI, H01N60SJ
HSMC Product Specification
HI-SINCERITY
Spec. No. : MOS200501
Issued Date : 2005.01.01
Revised Date : 2005.09.28
Page No. : 2/5
MICROELECTRONICS CORP.
Thermal Characteristics
Symbol
Parameter
Value
Units
RθJC
Thermal Resistance Junction to Case Max.
4.5
°C/W
RθJA
Thermal Resistance Junction to Ambient Max.
110
°C/W
ELectrical Characteristics (TJ=25°C, unless otherwise specified)
Symbol
Characteristic
Min.
Typ.
Max.
Unit
600
-
-
V
Breakdown Voltage Temperature Coefficient (ID=250uA, Referenced
to 25oC)
-
0.6
-
V/oC
Zero Gate Voltage Drain Current (VDS=600V, VGS=0V)
-
-
1
uA
Zero Gate Voltage Drain Current (VDS=480V, Tj=125°C)
-
-
50
uA
IGSSF
Gate-Body Leakage Current-Forward (VGS=30V, VDS=0V)
-
-
100
nA
IGSSR
Gate-Body Leakage Current-Reverse (VGS=-30V, VDS=0V)
-
-
-100
nA
2
-
4
V
-
-
12
Ω
-
0.75
-
S
-
210
250
-
19
25
-
4
8
-
-
30
VDD=300V, ID=1.1A
-
-
60
*3
-
-
45
-
-
75
-
15
20
-
4
-
-
3
-
• Off Characteristics
VDSS
∆BVDSS/∆TJ
IDSS
Drain-Source Breakdown Voltage (VGS=0V, ID=250uA)
• On Characteristics
VGS(th)
Gate Threshold Voltage (VDS=VGS, ID=250uA)
RDS(on)
Static Drain-Source On-Resistance (VGS=10V, ID=0.6A) *3
gFS
Forward Transconductance (VDS=40V, ID=0.5A)
*3
• Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VGS=0V, VDS=25V, f=1MHz
pF
• Switching Characteristics
td(on)
Turn-on Delay Time
tr
Turn-on Rise Time
td(off)
Turn-off Delay Time
tf
Turn-off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
RG=25Ω
VDS=480V, ID=1.1A
VGS=10V *3
ns
nC
• Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
-
-
1
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
-
-
4
A
VSD
Drain-Source Diode Forward Voltage (VGS=0V, IS=1A)
-
-
1.4
V
-
190
-
ns
-
0.53
-
nC
trr
Qrr
Reverse Recovery Time (VGS=0V, IS=1.1A, dlF/dt=100A/us)
*3
Reverse Recovery Charge (VGS=0V, IS=1.1A, dlF/dt=100A/us)
*3
*3: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2%
H01N60SI, H01N60SJ
HSMC Product Specification
HI-SINCERITY
Spec. No. : MOS200501
Issued Date : 2005.01.01
Revised Date : 2005.09.28
Page No. : 3/5
MICROELECTRONICS CORP.
TO-252 Dimension
Marking:
M
A
a1
Pb Free Mark
Pb-Free: " . " (Note)
H
Normal: None
J
0 1 N 6 0 S
F
C
Date Code
Control Code
Note: Green label is used for pb-free packing
G
Pin Style: 1.Gate 2.Drain 3.Source
2
1
N
3
H
a5
Min.
6.35
4.80
1.30
5.40
2.20
0.40
2.20
0.90
0.40
0.65
Max.
6.80
5.50
1.70
6.25
3.00
0.90
2.40
1.50
0.65
*2.30
1.05
*: Typical, Unit: mm
a1
a2
L
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
A
C
F
G
H
L
M
N
a1
a2
a5
3-Lead TO-252 Plastic
Surface Mount Package
HSMC Package Code: J
Marking:
A
B
C
D
a1
M
F
Pb Free Mark
Pb-Free: " . " (Note)
H
Normal: None
J
0 1 N 6 0 S
a1
y1
E
Date Code
Note: Green label is used for pb-free packing
GI
y1
Pin Style: 1.Gate 2.Drain 3.Source
y1
H
J
N
K
L
a2
a1
O
a2
y2
y2
3-Lead TO-252 Plastic
Surface Mount Package
HSMC Package Code: J
H01N60SI, H01N60SJ
Control Code
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
a1
a2
y1
y2
Min.
6.40
5.04
0.40
0.50
5.90
2.50
9.20
0.60
0.66
2.20
0.70
0.82
0.40
2.10
-
Max.
6.80
6.00
5.64
*4.34
0.80
0.90
6.30
2.90
9.80
1.00
0.96
0.86
2.40
1.10
1.22
0.60
2.50
5o
3o
*: Typical, Unit: mm
HSMC Product Specification
HI-SINCERITY
Spec. No. : MOS200501
Issued Date : 2005.01.01
Revised Date : 2005.09.28
Page No. : 4/5
MICROELECTRONICS CORP.
TO-251 Dimension
A
a1
F
Tab
DIM
A
C
F
G
H1
K
K1
L
M
a1
a2
Marking:
M
Pb Free Mark
Pb-Free: " . " (Note)
H
Normal: None
I
0 1 N 6 0 S
C
Date Code
G
Control Code
Note: Green label is used for pb-free packing
1
2
3
Pin Style: 1.Gate 2.Drain 3.Source
L
K
H1
a1
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
Min.
6.35
4.80
1.30
5.40
6.75
0.50
0.40
0.90
2.20
0.40
-
Max.
6.80
5.50
1.70
6.25
8.00
0.90
0.90
1.50
2.40
0.65
*2.30
*: Typical, Unit: mm
K1
a2
3-Lead TO-251
Plastic Package
HSMC Package Code: I
a2
A
B
C
D
a1
DIM
A
B
C
D
E
F
G
H
H1
I
J
K
K1
M
a1
a2
y1
y2
Marking:
M
Pb Free Mark
F
Pb-Free: " . " (Note)
H
Normal: None
a1
y1
I
0 1 N 6 0 S
E
G
I
y1
y1
H1
K1
a2
y2
Pin Style: 1.Gate 2.Drain 3.Source
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
J
a2
Control Code
Note: Green label is used for pb-free packing
H
K
Date Code
a1
y2
Min.
6.40
5.04
0.40
0.50
5.90
2.20
0.40
2.10
-
Max.
6.80
6.00
5.64
*4.34
0.80
0.90
6.30
*1.80
*9.30
*16.10
*0.80
0.96
*0.76
2.40
0.60
2.50
5o
3o
*: Typical, Unit: mm
3-Lead TO-251
Plastic Package
HSMC Package Code: I
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
H01N60SI, H01N60SJ
HSMC Product Specification
HI-SINCERITY
Spec. No. : MOS200501
Issued Date : 2005.01.01
Revised Date : 2005.09.28
Page No. : 5/5
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
tP
Critical Zone
TL to TP
TP
Ramp-up
TL
tL
Temperature
Tsmax
Tsmin
tS
Preheat
Ramp-down
25
t 25oC to Peak
Time
Profile Feature
Average ramp-up rate (TL to TP)
Sn-Pb Eutectic Assembly
Pb-Free Assembly
<3oC/sec
<3oC/sec
100oC
150oC
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
o
150 C
200oC
60~120 sec
60~180 sec
<3oC/sec
<3oC/sec
183oC
217oC
Tsmax to TL
- Ramp-up Rate
Time maintained above:
- Temperature (TL)
- Time (tL)
60~150 sec
Peak Temperature (TP)
Time within 5oC of actual Peak
Temperature (tP)
Ramp-down Rate
Time 25oC to Peak Temperature
o
o
60~150 sec
240 C +0/-5 C
260oC +0/-5oC
10~30 sec
20~40 sec
<6oC/sec
<6oC/sec
<6 minutes
<8 minutes
Peak temperature
Dipping time
245oC ±5oC
5sec ±1sec
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
H01N60SI, H01N60SJ
o
o
260 C +0/-5 C
5sec ±1sec
HSMC Product Specification
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