HSMC H02N60E N-channel power field effect transistor Datasheet

HI-SINCERITY
Spec. No. : MOS200403
Issued Date : 2004.07.01
Revised Date : 2005.07.14
Page No. : 1/6
MICROELECTRONICS CORP.
H02N60 Series
H02N60 Series Pin Assignment
3-Lead Plastic TO-252
Package Code: J
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
Tab
N-Channel Power Field Effect Transistor
1
2
3
Tab
Description
This high voltage MOSFET uses an advanced termination scheme to
provide enhanced voltage-blocking capability without degratding
performance over time. In addition, this advanced MOSFET is designed to
withstand high energy in avalanche and commutation modes. The new
energy efficient design also offers a drain-to-source diode with a fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional and saafety margin against unexpected voltage transients.
Tab
1
3-Lead Plastic TO-251
Package Code: I
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3
2
3-Lead Plastic TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
1
2
3
Features
• Robust High Voltage Termination
• Avalanc he Energy Specified
• Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast
Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
3-Lead Plastic TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
1
2
3
H02N60 Series
Symbol:
Absolute Maximum Ratings
Symbol
D
G
S
Parameter
Value
Units
ID
Drain to Current (Continuous)
2
A
IDM
Drain to Current (Pulsed)
8
A
VGS
Gate-to-Source Voltage (Continue)
±20
V
o
Total Power Dissipation (TC=25 C)
PD
Tj, Tstg
H02N60I (TO-251) / H02N60J (TO-252)
50
H02N60E (TO-220AB)
50
H02N60F (TO-220FP)
25
W
Derate above 25°C
H02N60I (TO-251) / H02N60J (TO-252)
0.4
H02N60E (TO-220AB)
0.4
H02N60F (TO-220FP)
0.33
Operating and Storage Temperature Range
W/°C
-55 to 150
°C
EAS
Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25°C
(VDD=100V, VGS=10V, IL=2A, L=10mH, RG=25Ω)
35
mJ
TL
Maximum Lead Temperature for Soldering Purposes, 1/8”
from case for 10 seconds
260
°C
H02N60I, H02N60J, H02N60E, H02N60F
HSMC Product Specification
HI-SINCERITY
Spec. No. : MOS200403
Issued Date : 2004.07.01
Revised Date : 2005.07.14
Page No. : 2/6
MICROELECTRONICS CORP.
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Value
Thermal Resistance Junction to Case Max.
Units
TO-251 / TO-252
2
TO-220AB
2
TO-220FP
3.3
Thermal Resistance Junction to Ambient Max.
°C/W
°C/W
62.5
ELectrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
600
-
-
V
Drain-Source Leakage Current (VDS=600V, VGS=0V)
-
-
1
uA
Drain-Source Leakage Current (VDS=480V, VGS=0V, Tj=125°C)
-
-
50
uA
IGSSF
Gate-Source Leakage Current-Forward (Vgsf=20V, VDS=0V)
-
-
100
nA
IGSSR
Gate-Source Leakage Current-Reverse (Vgsr=-20V, VDS=0V)
-
-
-100
nA
VGS(th)
Gate Threshold Voltage (VDS=VGS, ID=250uA)
2
-
4
V
RDS(on)
Static Drain-Source On-Resistance (VGS=10V, ID=1A)*
-
-
4.4
Ω
gFS
Forward Transconductance (VDS≥50V, ID=1A)*
1
-
-
mhos
Ciss
Input Capacitance
-
435
-
Coss
Output Capacitance
-
56
-
Crss
Reverse Transfer Capacitance
-
9.2
-
td(on)
Turn-on Delay Time
-
12
-
-
21
-
-
30
-
Fall Time
-
24
-
Qg
Total Gate Charge
-
13
22
Qgs
Gate-Source Charge
-
2
-
Qgd
Gate-Drain Charge
-
6
-
LD
Internal Drain Inductance (Measured from the drain lead 0.25” from
package to center of die)
-
4.5
-
nH
LS
Internal Drain Inductance (Measured from the drain lead 0.25” from
package to source bond pad)
-
7.5
-
nH
Min.
Typ.
Max.
Units
-
-
1.6
V
-
**
-
ns
-
340
-
ns
V(BR)DSS
IDSS
tr
td(off)
tf
Characteristic
Drain-Source Breakdown Voltage (VGS=0V, ID=250uA)
Rise Time
Turn-off Delay Time
VGS=0V, VDS=25V, f=1MHz
(VDD=300V, ID=2A, RG=18Ω,
VGS=10V)*
(VDS=300V, ID=6A, VGS=10V)*
pF
ns
nC
*: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2%
Source-Drain Diode
Symbol
Characteristic
VSD
Forward On Voltage(1)
ton
Forward Turn-On Time
trr
Reverse Recovery Time
o
IS=2A, VGS=0V, TJ=25 C
IS=2A, VGS=0V, dIS/dt=100A/us
**: Negligible, Dominated by circuit inductance
H02N60I, H02N60J, H02N60E, H02N60F
HSMC Product Specification
HI-SINCERITY
Spec. No. : MOS200403
Issued Date : 2004.07.01
Revised Date : 2005.07.14
Page No. : 3/6
MICROELECTRONICS CORP.
TO-252 Dimension
Marking:
M
A
a1
Pb Free Mark
Pb-Free: " . " (Note)
H
Normal: None
F
J
0 2 N 6 0
C
Date Code
Control Code
Note: Green label is used for pb-free packing
G
Pin Style: 1.Gate 2.Drain 3.Source
2
1
N
3
H
a5
Min.
6.35
4.80
1.30
5.40
2.20
0.40
2.20
0.90
0.40
0.65
Max.
6.80
5.50
1.70
6.25
3.00
0.90
2.40
1.50
0.65
*2.30
1.05
*: Typical, Unit: mm
a1
a2
L
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
A
C
F
G
H
L
M
N
a1
a2
a5
3-Lead TO-252 Plastic
Surface Mount Package
HSMC Package Code: J
Marking:
A
B
C
D
a1
M
F
Pb Free Mark
Pb-Free: " . " (Note)
H
Normal: None
a1
y1
E
Date Code
y1
Pin Style: 1.Gate 2.Drain 3.Source
y1
H
N
K
L
a2
a1
O
a2
y2
Control Code
Note: Green label is used for pb-free packing
GI
J
J
0 2 N 6 0
y2
3-Lead TO-252 Plastic
Surface Mount Package
HSMC Package Code: J
H02N60I, H02N60J, H02N60E, H02N60F
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
a1
a2
y1
y2
Min.
6.40
5.04
0.40
0.50
5.90
2.50
9.20
0.60
0.66
2.20
0.70
0.82
0.40
2.10
-
Max.
6.80
6.00
5.64
*4.34
0.80
0.90
6.30
2.90
9.80
1.00
0.96
0.86
2.40
1.10
1.22
0.60
2.50
5o
3o
*: Typical, Unit: mm
HSMC Product Specification
HI-SINCERITY
Spec. No. : MOS200403
Issued Date : 2004.07.01
Revised Date : 2005.07.14
Page No. : 4/6
MICROELECTRONICS CORP.
TO-251 Dimension
A
Marking:
M
a1
F
Tab
Pb Free Mark
Pb-Free: " . " (Note)
H
Normal: None
C
I
0 2 N 6 0
Date Code
G
Control Code
Note: Green label is used for pb-free packing
1
2
3
Pin Style: 1.Gate 2.Drain 3.Source
L
K
H1
a1
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
A
C
F
G
H1
K
K1
L
M
a1
a2
Min.
6.35
4.80
1.30
5.40
6.75
0.50
0.40
0.90
2.20
0.40
-
Max.
6.80
5.50
1.70
6.25
8.00
0.90
0.90
1.50
2.40
0.65
*2.30
*: Typical, Unit: mm
K1
a2
3-Lead TO-251
Plastic Package
HSMC Package Code: I
a2
A
B
C
D
a1
Marking:
M
Pb Free Mark
F
Pb-Free: " . " (Note)
H
Normal: None
a1
y1
I
0 2 N 6 0
E
G
I
y1
y1
H1
K1
a2
y2
Pin Style: 1.Gate 2.Drain 3.Source
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
J
a2
Control Code
Note: Green label is used for pb-free packing
H
K
Date Code
a1
y2
H02N60I, H02N60J, H02N60E, H02N60F
3-Lead TO-251
Plastic Package
HSMC Package Code: I
DIM
A
B
C
D
E
F
G
H
H1
I
J
K
K1
M
a1
a2
y1
y2
Min.
6.40
5.04
0.40
0.50
5.90
2.20
0.40
2.10
-
Max.
6.80
6.00
5.64
*4.34
0.80
0.90
6.30
*1.80
*9.30
*16.10
*0.80
0.96
*0.76
2.40
0.60
2.50
5o
3o
*: Typical, Unit: mm
HSMC Product Specification
HI-SINCERITY
Spec. No. : MOS200403
Issued Date : 2004.07.01
Revised Date : 2005.07.14
Page No. : 5/6
MICROELECTRONICS CORP.
TO-220AB Dimension
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Marking:
A
F
B
Pb Free Mark
Pb-Free: " . " (Note)
Normal: None
H
E
C
D
E
0 2N60
Date Code
H
K
M
I
3
G
N
2
O
P
J
L
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2 & Tab.Drain 3.Source
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
1
Tab
Control Code
Min.
5.58
8.38
4.40
1.15
0.35
2.03
9.66
3.00
0.75
2.54
1.14
12.70
14.48
Max.
7.49
8.90
4.70
1.39
0.60
2.92
10.28
*16.25
*3.83
4.00
0.95
3.42
1.40
*2.54
14.27
15.87
*: Typical, Unit: mm
3-Lead TO-220AB
Plastic Package
HSMC Package Code: E
TO-220FP Dimension
Marking:
A
α4
α1
Pb Free Mark
Pb-Free: " . " (Note)
Normal: None
H
E O
C
D
α3
α2
α5
Date Code
G
I
J
N
2
K
1
M
L
Control Code
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2.Drain 3.Source
3
F
F
0 2N60
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
Min.
A
6.48
C
4.40
D
2.34
E
0.45
F
9.80
G
3.10
I
2.70
J
0.60
K
2.34
L
12.48
M
15.67
N
0.90
O
2.00
α1/2/4/5
α3
Max.
7.40
4.90
3.00
0.80
10.36
3.60
3.43
1.00
2.74
13.60
16.20
1.47
2.96
*5o
*27o
*: Typical, Unit: mm
3-Lead TO-220FP
Plastic Package
HSMC Package Code: F
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
H02N60I, H02N60J, H02N60E, H02N60F
HSMC Product Specification
HI-SINCERITY
Spec. No. : MOS200403
Issued Date : 2004.07.01
Revised Date : 2005.07.14
Page No. : 6/6
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
tP
Critical Zone
TL to TP
TP
Ramp-up
TL
tL
Temperature
Tsmax
Tsmin
tS
Preheat
Ramp-down
25
t 25oC to Peak
Time
Profile Feature
Average ramp-up rate (TL to TP)
Sn-Pb Eutectic Assembly
Pb-Free Assembly
<3oC/sec
<3oC/sec
100oC
150oC
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
o
150 C
200oC
60~120 sec
60~180 sec
<3oC/sec
<3oC/sec
183oC
217oC
Tsmax to TL
- Ramp-up Rate
Time maintained above:
- Temperature (TL)
- Time (tL)
60~150 sec
Peak Temperature (TP)
Time within 5oC of actual Peak
Temperature (tP)
Ramp-down Rate
Time 25oC to Peak Temperature
o
o
60~150 sec
240 C +0/-5 C
260oC +0/-5oC
10~30 sec
20~40 sec
<6oC/sec
<6oC/sec
<6 minutes
<8 minutes
Peak temperature
Dipping time
245oC ±5oC
5sec ±1sec
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
H02N60I, H02N60J, H02N60E, H02N60F
o
o
260 C +0/-5 C
5sec ±1sec
HSMC Product Specification
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