Fairchild H11A817ASD 4-pin phototransistor optocoupler Datasheet

4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES
H11A617 SERIES
PACKAGE
H11A817 SERIES
H11AA814 SCHEMATIC
1
4 COLLECTOR
2
3 EMITTER
4
1
DESCRIPTION
H11A617 & H11A817 SCHEMATIC
The H11AA814 Series consists of two gallium arsenide infrared emitting diodes,
connected in inverse parallel, driving a single silicon phototransistor in a 4-pin
dual in-line package.
The H11A617 and H11A817 Series consists of a gallium arsenide infrared
emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.
FEATURES
• Compact 4-pin package
• Current transfer ratio in selected groups:
H11AA814: 20-300%
H11A817:
H11AA814A: 50-150%
H11A817A:
H11A617A: 40%-80%
H11A817B:
H11A617B: 63%-125%
H11A817C:
H11A617C: 100%-200%
H11A817D:
H11A617D: 160%-320%
ANODE 1
CATHODE 2
4 COLLECTOR
3 EMITTER
50-600%
80-160%
130-260%
200-400%
300-600%
• Minimum BVCEO of 70V guaranteed
APPLICATIONS
H11AA814 Series
• AC line monitor
• Unknown polarity DC sensor
• Telephone line interface
H11A617 and H11A817 Series
• Power supply regulators
• Digital logic inputs
• Microprocessor inputs
© 2003 Fairchild Semiconductor Corporation
Page 1 of 9
4/24/03
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES
H11A617 SERIES
Parameter
H11A817 SERIES
Symbol
Device
Value
Units
Storage Temperature
TSTG
All
-55 to +150
°C
Operating Temperature
TOPR
All
-55 to +100
°C
Lead Solder Temperature
TSOL
All
260 for 10 sec
°C
PD
All
200
mW
Continuous Forward Current
IF
All
50
mA
Reverse Voltage
VR
H11A617A/B/C/D
H11A817/A/B/C/D
6
5
V
IF(pk)
All
1.0
A
PD
All
100
1.33
mW
mW/°C
VCEO
All
70
V
VECO
H11AA814/A
H11A617A/B/C/D
H11A817/A/B/C/D
6
7
6
V
IC
All
50
mA
All
150
2.0
mW
mW/°C
TOTAL DEVICE
Total Device Power Dissipation (-55°C to 50 °C)
EMITTER
Forward Current - Peak (1 µs pulse, 300 pps)
LED Power Dissipation (25°C ambient)
Derate above 25°C
DETECTOR
Collector-Emitter Voltage
Emitter-Collector Voltage
Continuous Collector Current
Detector Power Dissipation (25°C ambient)
Derate above 25°C
PD
ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter
Test Conditions Symbol
(IF = 60 mA)
EMITTER
(IF = 20 mA)
Input Forward Voltage
(VR = 6.0 V)
(VR = 5.0 V)
(IC = 1.0 mA, IF = 0)
BVCEO
Emitter-Collector Breakdown
Voltage
(IE = 100 µA, IF = 0)
BVECO
(VCE = 10V, IF = 0)
ICEO
(VCE = 0 V, f = 1 MHz)
Typ*
Max
1.35
1.65
H11A817/A/B/C/D
1.2
1.5
H11AA814/A
1.2
1.5
.001
10
H11A617A/B/C/D
IR
DETECTOR
Collector-Emitter Breakdown
Voltage
Collector-Emitter Capacitance
Min
H11A617A/B/C/D
VF
(IF = ±20 mA)
Reverse Leakage Current
Collector-Emitter Dark Current
Device
H11A817/A/B/C/D
Unit
V
µA
ALL
70
100
V
H11AA814/A
H11A617A/B/C/D
H11A817/A/B/C/D
H11AA814/A, H11A817/A/B/C/D,
H11A617C/D
H11A617A/B
6
7
6
10
V
CCE
ALL
1
100
nA
50
8
pF
*Typical values at TA = 25°C.
© 2003 Fairchild Semiconductor Corporation
Page 2 of 9
4/24/03
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES
H11A617 SERIES
H11A817 SERIES
TRANSFER CHARACTERISTICS (TA = 25°C Unless otherwise specified.)
DC Characteristic
Test Conditions
Symbol
Device
Min
(IF = ±1 mA, VCE = 5 V) (note 1)
H11AA814
(IF = ±1 mA, VCE = 5 V) (note 1)
(IF = 10 mA, VCE = 5 V) (note 1)
Current Transfer
Ratio
CTR
(IF = 5 mA, VCE = 5 V) (note 1)
(IF = 1 mA, VCE = 5 V) (note 1)
Typ*
Max
Unit
20
300
%
H11AA814A
50
150
%
H11A617A
40
80
%
H11A617B
63
125
%
H11A617C
100
200
%
H11A617D
160
320
%
H11A817
50
600
%
H11A817A
80
160
%
H11A817B
130
260
%
H11A817C
200
400
%
H11A817D
300
600
%
H11A617A
13
%
H11A617B
22
%
H11A617C
34
%
H11A617D
56
%
H11AA814/A
0.2
H11A617A/B/C/D
0.4
H11A817/A/B/C/D
0.2
(IC = 1 mA, IF = ±20 mA)
(IC = 2.5 mA, IF = 10 mA)
(IC = 1 mA, IF = 20 mA)
VCE (SAT)
Rise Time
(IC = 2 mA, VCE = 2 V, RL = 100V) (note 2)
tr
ALL
2.4
18
µs
Fall Time
(IC = 2 mA, VCE = 2 V, RL = 100V) (note 2)
tf
ALL
2.4
18
µs
Collector-Emitter
Saturation Voltage
V
AC Characteristic
ISOLATION CHARACTERISTICS
Characteristic
Test Conditions
Symbol
Min
Input-Output Isolation Voltage (note 3)
f = 60Hz, t = 1 min
VISO
5300
Vac(rms)
Isolation Resistance
(VI-O = 500 VDC)
RISO
1011
Ω
(VI-O = 0, f = 1 MHz)
CISO
Isolation Capacitance
Typ*
0.5
Max
Units
pf
*Typical values at TA = 25°C.
NOTES
1. Current Transfer Ratio (CTR) = IC/IF x 100%.
2. For test circuit setup and waveforms, refer to Figure 8.
3. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common.
© 2003 Fairchild Semiconductor Corporation
Page 3 of 9
4/24/03
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11A617 SERIES
Fig. 1 Normalized CTR vs. Forward Current
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
10
5
15
20
30
25
NORMALIZED CTR
CTR NORMALIZED @ IF = 5 mA, VCE = 5 V, TA = 25˚C
NORMALIZED CTR
CTR NORMALIZED @ IF = 5 mA, VCE = 5 V, TA = 25˚C
H11AA814 SERIES
H11A817 SERIES
Fig. 2 Normalized CTR vs. Ambient Temperature
1.2
IF = 10 mA
1
IF = 5 mA
0.8
0.6
0.4
-50
-25
IF - FORWARD CURRENT (mA)
0
+25
+50
+75
+100
TA - AMBIENT TEMPERATURE (˚C)
Fig. 3 Collector-Emitter Saturation Voltage
vs. Ambient Temperature
Fig. 4 Forward Voltage vs. Forward Current
IF = 20 mA
IC = 1 mA
1.7
.12
VF - FORWARD VOLTAGE (V)
VCE (SAT) - COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
.14
.1
.08
.06
.04
.02
0
-50
1.5
1.3
T = -55˚C
1.1
T = 25˚C
0.9
T = 100˚C
0.7
0.5
-25
25
0
50
75
100
125
TA - AMBIENT TEMPERATURE (˚C)
0.1
0.2
0.5
1.0
2.0
5
10
20
50
100
IF - FORWARD CURRENT (mA)
Fig. 5 Collector Current
vs. Collector-Emitter Voltage
IC - COLLECTOR CURRENT (mA)
25
IF = 20 mA
20
15
IF = 10 mA
10
IF = 5 mA
5
IF = 1 mA
0
0
1
2
3
4
5
6
7
8
9
10
VCE - COLLECTOR-EMITTER VOLTAGE (V)
© 2003 Fairchild Semiconductor Corporation
Page 4 of 9
4/24/03
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES
H11A617 SERIES
Fig. 7 Rise and Fall Time
vs. Load Resistor
Fig. 6 Collector Leakage Current
vs. Ambient Temperature
1000
10
IF = 5 mA
VCC = 5 V
TA = 25˚C
VCE = 10 V
1
Tr/ Tf- RISE AND FALL TIME (µs)
ICEO - COLLECTOR-EMITTER CURRENT (µA)
H11A817 SERIES
10-1
10-2
10-3
10-4
toff
tf
100
10
ton
1
tr
10-5
10-6
0.1
0
25
50
75
100
0.1
125
1
10
100
R - LOAD RESISTOR (KV)
TA - AMBIENT TEMPERATURE (˚C)
Figure 8. Switching Time Test Circuit and Waveforms
TEST CIRCUIT
WAVE FORMS
VCC = 10V
INPUT PULSE
IC
IF
INPUT
RL = 100Ω
10%
OUTPUT
OUTPUT PULSE
90%
tr
tf
Adjust IF to produce IC = 2 mA
Recommended Thermal Reflow Profile for Surface Mount DIP Package
Temperature (°C)
225°C
250
220°C: 10 sec to 40 sec
200
150
Time > 183°C: 120 sec to 180 sec
100
50
0
0
© 2003 Fairchild Semiconductor Corporation
1
2
3
Page 5 of 9
4
5
Time (Min)
4/24/03
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES
H11A617 SERIES
Package Dimensions (Through Hole)
H11A817 SERIES
Package Dimensions (Surface Mount)
0.270 (6.86)
0.250 (6.35)
0.270 (6.86)
0.250 (6.35)
SEATING PLANE
0.200 (5.08)
0.115 (2.92)
0.200 (5.08)
0.115 (2.92)
0.070 (1.78)
0.045 (1.14)
0.154 (3.90)
0.120 (3.05)
0.300 (7.62)
TYP
0.190 (4.83)
0.175 (4.45)
SEATING PLANE
0.270 (6.86)
0.250 (6.35)
0.190 (4.83)
0.175 (4.45)
0.020 (0.51)
MIN
0.020 (0.51)
MIN
0.022 (0.56)
0.016 (0.41)
15°
0.100 (2.54)
TYP
0.315 (8.00)
MIN
0.405 (10.30)
MAX
0.016 (0.40)
0.008 (0.20)
0.100 (2.54)
TYP
0.016 (0.40)
0.008 (0.20)
0.300 (7.62)
typ
Lead Coplanarity 0.004 (0.10) MAX
Package Dimensions (0.4” Lead Spacing)
Footprint Dimensions (Surface Mount)
0.070 (1.78)
0.270 (6.86)
0.250 (6.35)
SEATING PLANE
0.060 (1.52)
0.190 (4.83)
0.175 (4.45)
0.200 (5.08)
0.115 (2.92)
0.270 (6.86)
0.250 (6.35)
0.100 (2.54)
0.295 (7.49)
0.415 (10.54)
0.154 (3.90)
0.120 (3.05)
0.030 (0.76)
0.004 (0.10)
MIN
0.100 (2.54)
TYP
0.400 (10.16)
TYP
0.016 (0.40)
0.008 (0.20)
0 to 15°
NOTE
All dimensions are in inches (millimeters)
© 2003 Fairchild Semiconductor Corporation
Page 6 of 9
4/24/03
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES
H11A617 SERIES
H11A817 SERIES
ORDERING INFORMATION
Option
Order Entry Identifier
Description
S
.S
Surface Mount Lead Bend
SD
.SD
Surface Mount; Tape and reel
W
.W
0.4" Lead Spacing
300
.300
VDE 0884
300W
.300W
VDE 0884, 0.4" Lead Spacing
3S
.3S
VDE 0884, Surface Mount
3SD
.3SD
VDE 0884, Surface Mount, Tape & Reel
MARKING INFORMATION
4
5
V X YY T
3
814
6
2
1
Definitions
1
Fairchild logo
2
Device number
3
VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
4
One digit year code
5
Two digit work week ranging from ‘01’ to ‘53’
6
Assembly package code
© 2003 Fairchild Semiconductor Corporation
Page 7 of 9
4/24/03
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES
H11A617 SERIES
H11A817 SERIES
Carrier Tape Specifications
12.0 ± 0.1
5.00 ± 0.20
0.30 ± 0.05
4.0 ± 0.1
4.0 ± 0.1
Ø1.55 ± 0.05
1.75 ± 0.10
7.5 ± 0.1
16.0 ± 0.3
13.2 ± 0.2
4.95 ± 0.20
0.1 MAX
10.30 ± 0.20
Ø1.6 ± 0.1
User Direction of Feed
NOTE
All dimensions are in millimeters
© 2003 Fairchild Semiconductor Corporation
Page 8 of 9
4/24/03
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES
H11A617 SERIES
H11A817 SERIES
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.
© 2003 Fairchild Semiconductor Corporation
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
Page 9 of 9
4/24/03
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