Fairchild H11AA3M Ac input/phototransistor optocoupler Datasheet

H11AA1M, H11AA2M, H11AA3M, H11AA4M
AC Input/Phototransistor Optocouplers
Features
Description
■ Bi-polar emitter input
The H11AAXM series consists of two gallium-arsenide
infrared emitting diodes connected in inverse parallel
driving a single silicon phototransistor output.
■ Built-in reverse polarity input protection
■ Underwriters Laboratory (UL) recognized File
#E90700, Volume 2
■ VDE approved File #102497 (ordering option ‘V’)
Applications
■ AC line monitor
■ Unknown polarity DC sensor
■ Telephone line interface
Schematic
Package Outlines
1
6 BASE
2
5 COLL
3
4 EMITTER
©2006 Fairchild Semiconductor Corporation
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3
www.fairchildsemi.com
H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers
September 2009
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
Device
Value
Units
-40 to +150
°C
TOTAL DEVICE
TSTG
Storage Temperature
All
TOPR
Operating Temperature
All
-40 to +100
°C
TSOL
Lead Solder Temperature
All
260 for 10 sec
°C
Total Device Power Dissipation
All
250
mW
2.94
mW/°C
PD
Derate Linearly From 25°C
EMITTER
IF
IF(pk)
PD
Continuous Forward Current
All
60
mA
Forward Current – Peak (1µs pulse, 300 pps)
All
±1.0
A
LED Power Dissipation
All
120
mW
1.41
mW/°C
Derate Linearly From 25°C
DETECTOR
IC
Continuous Collector Current
All
50
mA
PD
Detector Power Dissipation
All
150
mW
1.76
mW/°C
Derate linearity from 25°C
©2006 Fairchild Semiconductor Corporation
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3
www.fairchildsemi.com
2
H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers
Absolute Maximum Ratings (TA =25°C Unless otherwise specified)
Individual Component Characteristics
Symbol
Parameter
Test Conditions
Device
Min.
Typ.*
Max.
1.5
Unit
EMITTER
VF
Input Forward Voltage
IF = ±10mA
All
1.17
CJ
Capacitance
VF = 0 V, f = 1.0MHz
All
80
pF
V
DETECTOR
BVCEO
Breakdown Voltage
Collector to Emitter
IC = 1.0mA, IF = 0
All
30
100
V
BVCBO
Collector to Base
IC = 100µA, IF = 0
All
70
120
V
BVEBO
Emitter to Base
IE = 100µA, IF = 0
All
5
10
V
BVECO
Emitter to Collector
IE = 100µA, IF = 0
All
7
10
V
ICEO
Leakage Current
Collector to Emitter
VCE = 10 V, IF = 0
H11AA1M
H11AA3M
H11AA4M
1
50
H11AA2M
1
200
nA
CCE
Capacitance Collector
to Emitter
VCE = 0, f = 1MHz
All
10
pF
CCB
Collector to Base
VCB = 0, f = 1MHz
All
80
pF
CEB
Emitter to Base
VEB = 0, f = 1MHz
All
15
pF
*Typical values at TA = 25°C
Transfer Characteristics
Symbol
CTRCE
VCE(SAT)
Characteristics
Current Transfer Ratio,
Collector to Emitter
Test Conditions
Device
Min.
IF = ±10mA, VCE = 10V
H11AA4M
100
H11AA3M
50
H11AA1M
20
H11AA2M
10
.33
Current Transfer Ratio,
Symmetry
IF = ±10mA, VCE = 10V
(Figure 11)
All
Saturation Voltage,
Collector to Emitter
IF = ±10mA, ICE = 0.5mA
All
Typ.*
Max.
Units
%
3.0
.40
V
Isolation Characteristics
Symbol
Characteristic
Test Conditions
Min.
Typ.*
Units
CI-O
Package Capacitance
Input/Output
VI-O = 0, f = 1MHz
VISO
Isolation Voltage
f = 60Hz, t = 1 sec.
7500
Vac(pk)
VI-O = 500 VDC
1011
Ω
RISO
Isolation Resistance
0.7
Max.
pF
*Typical values at TA = 25°C
©2006 Fairchild Semiconductor Corporation
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3
www.fairchildsemi.com
3
H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers
Electrical Characteristics (TA = 25°C Unless otherwise specified.)
As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol
Parameter
Min.
Typ.
Max.
Unit
Installation Classifications per DIN VDE 0110/1.89
Table 1
For Rated Main Voltage < 150Vrms
I-IV
For Rated Main voltage < 300Vrms
I-IV
Climatic Classification
55/100/21
Pollution Degree (DIN VDE 0110/1.89)
2
CTI
Comparative Tracking Index
175
VPR
Input to Output Test Voltage, Method b,
VIORM x 1.875 = VPR, 100% Production Test
with tm = 1 sec, Partial Discharge < 5pC
1594
Vpeak
Input to Output Test Voltage, Method a,
VIORM x 1.5 = VPR, Type and Sample Test
with tm = 60 sec, Partial Discharge < 5pC
1275
Vpeak
VIORM
Max. Working Insulation Voltage
850
Vpeak
VIOTM
Highest Allowable Over Voltage
6000
Vpeak
External Creepage
7
mm
External Clearance
7
mm
Insulation Thickness
0.5
mm
Insulation Resistance at Ts, VIO = 500V
109
Ω
RIO
©2006 Fairchild Semiconductor Corporation
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3
www.fairchildsemi.com
4
H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers
Safety and Insulation Ratings
Fig. 2 Normalized CTR vs. Forward Current
Fig. 1 Input Voltage vs. Input Current
100
1.4
TA = 25°C
TA = 25°C
VCE = 5V
80
Normalized to IF = 10mA
60
1.0
40
NORMALIZED CTR
I F – INPUT CURRENT (mA)
1.2
20
0
-20
-40
0.8
0.6
0.4
-60
0.2
-80
0.0
-100
-2.0
-1.5
-1.0
-0.5
0.0
0.5
1.0
1.5
0
2.0
5
20
1.0
NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))
VCE = 5V
Normalized to IF = 10mA, TA = 25°C
1.2
IF = 10mA
NORMALIZED CTR
15
Fig. 4 CTR vs. RBE (Unsaturated)
Fig. 3 Normalized CTR vs. Ambient Temperature
1.4
1.0
IF = 5mA
0.8
IF = 20mA
0.6
0.4
0.2
-60
-40
-20
0
20
40
60
80
V
0.9
CE
= 5V
TA = 25°C
0.8
0.7
IF = 20mA
0.6
IF = 10mA
0.5
IF = 5mA
0.4
0.3
0.2
0.1
0.0
100
10
100
Fig. 6 Collector-Emitter Saturation Voltage vs Collector Current
VCE (SAT) – COLLECTOR-EMITTER SATURATION VOLTAGE (V)
Fig. 5 CTR vs. RBE (Saturated)
1.0
V
0.9
CE
= 0.3V
TA = 25°C
0.8
0.7
IF = 20mA
0.6
IF = 10mA
0.5
IF = 5mA
0.4
0.3
0.2
0.1
0.0
10
100
1000
RBE- BASE RESISTANCE (k Ω)
©2006 Fairchild Semiconductor Corporation
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3
1000
RBE – BASE RESISTANCE (kΩ)
TA – AMBIENT TEMPERATURE (°C)
NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))
10
IF – FORWARD CURRENT (mA)
VF – INPUT VOLTAGE (V)
100
T = 25°C
A
10
1
IF = 2.5mA
IF = 5mA
0.1
IF = 10mA
0.01
0.001
0.01
0.1
IF = 20mA
1
10
IC - COLLECTOR CURRENT (mA)
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H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers
Typical Performance Characteristics
Fig. 7 Switching Speed vs. Load Resistor
Fig. 8 Normalized ton vs. RBE
1000
7
SWITCHING SPEED (µs)
A
NORMALIZED ton – (ton(RBE) / ton(open))
IF = 10mA
VCC = 10V
T = 25°C
Toff
100
Tf
10
Ton
Tr
1
VCC = 10V
IC = 2mA
RL = 100Ω
T = 25°C
6
A
5
4
3
2
1
0
0.1
0.1
1
10
10
100
100
10000
100000
Fig. 10 Dark Current vs. Ambient Temperature
Fig. 9 Normalized toff vs. RBE
10000
3.0
VCC = 10V
IC = 2mA
RL = 100Ω
T = 25°C
2.5
ICEO – COLLECTOR -EMITTER DARK CURRENT (nA)
NORMALIZED toff – (toff(RBE) / toff(open))
1000
RBE- BASE RESISTANCE (k Ω)
R – LOAD RESISTOR (kΩ)
A
2.0
1.5
1.0
0.5
1000
100
VCE = 10V
VCE = 30V
10
1
0.1
0.0
10
100
1000
10000
0
100000
20
40
60
80
100
TA – AMBIENT TEMPERATURE (°C)
RBE – BASE RESISTANCE (kΩ)
Fig. 11 Output Symmetry Characteristics
10
NORMALIZED OUTPUT CURRENT
5
1
IF =
I - 10mA I
IF =
I 10mA I
.5
NORMALIZED TO:
VCE = 10 V
IF = 10 mA
.1
.05
THE MAXIMUM PEAK
OUTPUT CURRENT
WILL BE NO MORE
THAN THREE TIMES
THE MINIMUM PEAK
OUTPUT CURRENT AT
IF = ±10 mA
.01
.005
.01
.05
.1
.5
1
5
10
VCE – COLLECTOR TO EMITTER VOLTAGE (V)
©2006 Fairchild Semiconductor Corporation
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3
www.fairchildsemi.com
6
H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers
Typical Performance Characteristics (Continued)
Through Hole
0.4" Lead Spacing
8.13–8.89
6
4
8.13–8.89
6
4
1
3
6.10–6.60
6.10–6.60
Pin 1
1
3
Pin 1
5.08 (Max.)
0.25–0.36
7.62 (Typ.)
3.28–3.53
5.08 (Max.)
0.25–0.36
3.28–3.53
0.38 (Min.)
2.54–3.81
0.38 (Min.)
2.54–3.81
0.20–0.30
2.54 (Bsc)
(0.86)
15° (Typ.)
2.54 (Bsc)
(0.86)
0.41–0.51
1.02–1.78
0.20–0.30
0.41–0.51
0.76–1.14
10.16–10.80
1.02–1.78
0.76–1.14
Surface Mount
(1.78)
8.13–8.89
6
4
(1.52)
(2.54)
(7.49)
6.10–6.60
8.43–9.90
(10.54)
1
3
(0.76)
Pin 1
Rcommended Pad Layout
0.25–0.36
3.28–3.53
5.08
(Max.)
0.38 (Min.)
0.20–0.30
2.54 (Bsc)
(0.86)
0.16–0.88
(8.13)
0.41–0.51
1.02–1.78
0.76–1.14
Note:
All dimensions in mm.
©2006 Fairchild Semiconductor Corporation
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3
www.fairchildsemi.com
7
H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers
Package Dimensions
Option
Order Entry Identifier
(Example)
No option
H11AA1M
S
H11AA1SM
SR2
H11AA1SR2M
T
H11AA1TM
0.4" Lead Spacing
V
H11AA1VM
VDE 0884
TV
H11AA1TVM
VDE 0884, 0.4" Lead Spacing
SV
H11AA1SVM
VDE 0884, Surface Mount
SR2V
H11AA1SR2VM
Description
Standard Through Hole Device
Surface Mount Lead Bend
Surface Mount; Tape and Reel
VDE 0884, Surface Mount, Tape and Reel
Marking Information
1
V
3
H11AA1
2
X YY Q
6
4
5
Definitions
1
Fairchild logo
2
Device number
3
VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
4
One digit year code, e.g., ‘3’
5
Two digit work week ranging from ‘01’ to ‘53’
6
Assembly package code
*Note – Parts that do not have the ‘V’ option (see definition 3 above) that
are marked with date code ‘325’ or earlier are marked in portrait format.
©2006 Fairchild Semiconductor Corporation
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3
www.fairchildsemi.com
8
H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers
Ordering Information
12.0 ± 0.1
4.5 ± 0.20
2.0 ± 0.05
Ø1.5 MIN
4.0 ± 0.1
0.30 ± 0.05
1.75 ± 0.10
11.5 ± 1.0
21.0 ± 0.1
9.1 ± 0.20
Ø1.5 ± 0.1/-0
10.1 ± 0.20
0.1 MAX
24.0 ± 0.3
User Direction of Feed
Reflow Profile
300
260°C
280
260
>245°C = 42 Sec
240
220
200
180
°C
Time above
183°C = 90 Sec
160
140
120
1.822°C/Sec Ramp up rate
100
80
60
40
33 Sec
20
0
0
60
120
180
270
360
Time (s)
©2006 Fairchild Semiconductor Corporation
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3
www.fairchildsemi.com
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H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers
Carrier Tape Specification
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
EZSWITCH™*
™*
®
®
Fairchild
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FETBench™
FlashWriter®*
FPS™
F-PFS™
FRFET®
SM
Global Power Resource
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
®
OPTOPLANAR
®
PDP SPM™
Power-SPM™
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
™
Saving our world, 1mW/W/kW at a time™
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™
®
*
The Power Franchise®
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
µSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I40
©2006 Fairchild Semiconductor Corporation
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3
www.fairchildsemi.com
10
H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers
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