ISOCOM H11AV1X Optically coupled isolator Datasheet

H11AV1X, H11AV2X, H11AV3X
H11AV1, H11AV2, H11AV3
OPTICALLY COUPLED
ISOLATOR
PHOTOTRANSISTOR OUTPUT
Dimensions in mm
APPROVALS
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UL recognised, File No. E91231
Package System " GG "
'X' SPECIFICATION APPROVALS
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VDE 0884 in 3 available lead form : - STD
- G form
2.54
7.0
6.0
1
2
6
5
3
4
1.2
- SMD approved to CECC 00802
Certified to EN60950 by
Nemko - Certificate No. P01102464
7.62
6.62
7.62
4.0
3.0
13°
Max
0.5
3.0
DESCRIPTION
The H11AV series of optically coupled
isolators consist of infrared light emitting diode
and NPN silicon photo transistor in a standard
6 pin dual in line plastic package.
FEATURES
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Options :10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
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High Isolation Voltage (5.3kVRMS ,7.5kVPK )
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High BVCEO (70V min)
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All electrical parameters 100% tested
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Custom electrical selections available
APPLICATIONS
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DC motor controllers
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Industrial systems controllers
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Measuring instruments
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Signal transmission between systems of
different potentials and impedances
OPTION SM
OPTION G
SURFACE MOUNT
7.62
0.5
3.35
0.26
ABSOLUTEMAXIMUMRATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 150°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUTDIODE
Forward Current
Reverse Voltage
Power Dissipation
60mA
6V
105mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO
Collector-base Voltage BVCBO
Emitter-collector Voltage BVECO
Collector Current
Power Dissipation
70V
70V
6V
50mA
160mW
POWER DISSIPATION
0.6
0.1
10.46
9.86
1.25
0.75
0.26
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
10.16
ISOCOM COMPONENTS 2004 LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1UD
Tel: (01429) 863609 Fax :(01429) 863581
17/7/08
DB92055
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )
PARAMETER
Input
MIN TYP MAX UNITS
Forward Voltage (VF)
1.2
1.5
V
IF = 10mA
10
μA
VR = 6V
70
V
IC = 1mA
70
6
V
V
nA
IC = 100μA
IE = 100μA
VCE = 10V
300
%
%
%
10mA IF , 10V VCE
10mA IF , 10V VCE
10mA IF , 10V VCE
0.4
V
20mA IF , 2mA IC
VRMS
VPK
See note 1
See note 1
Ω
VIO = 500V (note 1)
μs
μs
VCC = 5V , fig 1
IF= 10mA, RL = 75Ω
Reverse Current (IR)
Output
Coupled
Collector-emitter Breakdown (BVCEO)
( note 2 )
Collector-base Breakdown (BVCBO)
Emitter-collector Breakdown (BVECO)
Collector-emitter Dark Current (ICEO)
50
Current Transfer Ratio (CTR)
H11AV1
H11AV2
H11AV3
100
50
20
Collector-emitter Saturation VoltageVCE(SAT)
Input to Output Isolation Voltage VISO
5300
7500
Input-output Isolation Resistance RISO 5x1010
Rise Time, tr
Fall Time, tf
Note 1
Note 2
TEST CONDITION
2
2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
VCC
Input
ton
toff
RL = 75Ω
tr
Output
tf
Output
10%
10%
90%
90%
FIG 1
17/7/08
DB92055m-AAS/A3
Collector Power Dissipation vs. Ambient Temperature
Collector Current vs. Collector-emitter Voltage
150
100
50
-30
0
25
50
75
100
15
20
10
10
IF = 5mA
0
2
4
6
8
Collector-emitter voltage VCE ( V )
Forward Current vs. Ambient Temperature
Collector-emitter Saturation
Voltage vs. Ambient Temperature
60
50
40
30
20
10
0
1.5
0.24
IF = 20mA
IC = 2mA
0.20
0.16
0.12
0.08
0.04
0
Ambient temperature TA ( °C )
Relative Current Transfer Ratio
vs. Ambient Temperature
Relative Current Transfer Ratio
vs. Forward Current
25
50
75
100
125
IF = 10mA
VCE = 10V
1.0
0.5
10
0.28
0
25
50
75
Ambient temperature TA ( °C )
0
Relative current transfer ratio
-30
Collector-emitter saturation voltage VCE(SAT) (V)
Ambient temperature TA ( °C )
70
Forward current IF (mA)
20
30
125
80
Relative current transfer ratio
50
30
40
0
0
-30
100
1.4
1.2
1.0
0.8
0.6
0.4
VCE = 10V
TA = 25°C
0.2
0
0
-30
17/7/08
TA = 25°C
50
Collector current IC (mA)
Collector power dissipation PC (mW)
200
0
25
50
75
Ambient temperature TA ( °C )
100
1
2
5
10
20
50
Forward current IF (mA)
DB92055m-AAS/A3
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