Fairchild H11D23S High voltage phototransistor optocoupler Datasheet

HIGH VOLTAGE
PHOTOTRANSISTOR OPTOCOUPLERS
H11D1
H11D2
H11D3
H11D4
4N38
DESCRIPTION
The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting
diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage
NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.
FEATURES
• High Voltage
- H11D1, H11D2, BVCER = 300 V
- H11D3, H11D4, BVCER = 200 V
• High isolation voltage
- 5300 VAC RMS - 1 minute
- 7500 VAC PEAK - 1 minute
• Underwriters Laboratory (UL) recognized File# E90700
ANODE 1
APPLICATIONS
•
•
•
•
•
Power supply regulators
Digital logic inputs
Microprocessor inputs
Appliance sensor systems
Industrial controls
CATHODE 2
N/C 3
6 BASE
5 COLLECTOR
4 EMITTER
ABSOLUTE MAXIMUM RATINGS
Parameter
TOTAL DEVICE
Storage Temperature
Symbol
Value
Units
TSTG
-55 to +150
°C
Operating Temperature
TOPR
-55 to +100
°C
Lead Solder Temperature
TSOL
260 for 10 sec
°C
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
EMITTER
*Forward DC Current
*Reverse Input Voltage
*Forward Current - Peak (1µs pulse, 300pps)
*LED Power Dissipation @ TA = 25°C
Derate above 25°C
260
mW
3.5
mW/°C
IF
80
mA
VR
6.0
V
IF(pk)
3.0
A
PD
PD
150
mW
1.41
mW/°C
8/9/00
200046A
HIGH VOLTAGE
PHOTOTRANSISTOR OPTOCOUPLERS
H11D1, H11D2, H11D3, H11D4, 4N38
ABSOLUTE MAXIMUM RATINGS (Cont.)
Parameter
Symbol
Value
Units
300
mW
4.0
mW/°C
DETECTOR
*Power Dissipation @ TA = 25°C
PD
Derate linearly above 25°C
H11D1 - H11D2
*Collector to Emitter Voltage
*Collector Base Voltage
300
H11D3 - H11D4
200
VCER
4N38
80
H11D1 - H11D2
300
H11D3 - H11D4
VCBO
4N38
*Emitter to Collector Voltage
V
200
80
H11D1 - H11D2
VECO
H11D3 - H11D4
7
Collector Current (Continuous)
100
ELECTRICAL CHARACTERISTICS
mA
(TA = 25°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Characteristic
Test Conditions
EMITTER
*Forward Voltage
Forward Voltage Temp.
Coefficient
Reverse Breakdown Voltage
(IF = 10 mA)
Symbol
Device
VF
!VF
!TA
BVR
(IR = 10 µA)
(VF = 0 V, f = 1 MHz)
(VF = 1 V, f = 1 MHz)
(VR = 6 V)
(RBE = 1 M")
(IC = 1.0 mA, IF = 0)
(No RBE) (IC = 1.0 mA)
BVCEO
(IC = 100 µA, IF = 0)
BVCBO
Emitter to Base
Emitter to Collector
(IE = 100 µA , IF = 0)
BVEBO
BVECO
*Leakage Current
Collector to Emitter
(RBE = 1 M")
(VCE = 200 V, IF = 0, TA = 25°C)
(VCE = 200 V, IF = 0, TA = 100°C)
(VCE = 100 V, IF = 0, TA = 25°C)
(VCE = 100 V, IF = 0, TA = 100°C)
(No RBE) (VCE = 60 V, IF = 0, TA = 25°C)
Junction Capacitance
*Reverse Leakage Current
DETECTOR
*Breakdown Voltage
Collector to Emitter
*Collector to Base
CJ
IR
BVCER
Typ**
Max
Unit
ALL
1.15
1.5
V
ALL
-1.8
mV/°C
25
50
65
0.05
V
pF
pF
µA
ALL
ALL
ALL
ALL
H11D1/2
H11D3/4
4N38
H11D1/2
H11D3/4
4N38
4N38
ALL
H11D1/2
ICER
H11D3/4
ICEO
4N38
Min
6
300
200
80
300
200
80
7
7
10
V
10
100
250
100
250
50
nA
µA
nA
µA
nA
Notes
* Parameters meet or exceed JEDEC registered data (for 4N38 only)
** All typical values at TA = 25°C
8/9/00
200046A
HIGH VOLTAGE
PHOTOTRANSISTOR OPTOCOUPLERS
H11D1, H11D2, H11D3, H11D4, 4N38
TRANSFER CHARACTERISTICS
DC Characteristic
Test Conditions
Symbol
Device
EMITTER
Min
Typ**
Max
Unit
H11D1
(IF = 10 mA, VCE = 10 V)
Current Transfer Ratio
H11D2
(RBE = 1 M")
Collector to Emitter
CTR
H11D3
(IF = 10 mA, VCE = 10 V)
(IF = 10 mA, IC = 0.5 mA)
*Saturation Voltage
(RBE = 1 M")
VCE (SAT)
2 (20)
mA (%)
H11D4
1 (10)
4N38
2 (20)
H11D1/2/3/4
(IF = 20 mA, IC = 4 mA)
0.1
0.40
4N38
V
1.0
TRANSFER CHARACTERISTICS
Characteristic
Test Conditions
SWITCHING TIMES
Non-Saturated Turn-on Time
Symbol
Device
(VCE =10 V, ICE = 2 mA)
ton
ALL
5
(RL = 100 ")
toff
ALL
5
Symbol
Device
(II-O #$1 µA, 1 min.)
VISO
ALL
(VI-O = 500 VDC)
RISO
ALL
(f = 1 MHz)
CISO
ALL
Turn-off Time
Min
Typ**
Max
Unit
µs
ISOLATION CHARACTERISTICS
Characteristic
Test Conditions
Isolation Voltage
Isolation Resistance
Isolation Capacitance
Min
Typ**
Max
Unit
5300
(VACRMS)
7500
(VACPEAK)
1011
"
0.5
pF
Notes
* Parameters meet or exceed JEDEC registered data (for 4N38 only)
** All typical values at TA = 25°C
Fig.1 LED Forward Voltage vs. Forward Current
Fig.2 Normalized Output Characteristics
NORMALIZED ICER - OUTPUT CURRENT
1.8
VF - FORWARD VOLTAGE (V)
1.7
1.6
1.5
1.4
TA = 55˚C
1.3
TA = 25˚C
1.2
1.1
TA = 100˚C
1.0
1
10
IF - LED FORWARDCURRENT (mA)
100
Normalized to:
VCE = 10 V
IF = 10 mA
RBE = 106 Ω
TA = 25˚C
10
IF = 50 mA
IF = 10 mA
1
IF = 5 mA
0.1
0.01
0.1
1
10
100
VCE - COLLECTOR VOLTAGE (V)
8/9/00
200046A
HIGH VOLTAGE
PHOTOTRANSISTOR OPTOCOUPLERS
H11D1, H11D2, H11D3, H11D4, 4N38
Fig.4 Normalized Output Current vs. Temperature
Fig.3 Normalized Output Current vs. LED Input Current
NORMALIZED ICER - OUTPUT CURRENT
NORMALIZED ICER - OUTPUT CURRENT
10
Normalized to:
VCE = 10 V
IF = 10 mA
RBE = 106 Ω
TA = 25˚C
1
0.1
0.01
1
IF = 20 mA
IF = 10 mA
1
IF = 5 mA
0.1
-60
10
-40
IF - LED INPUT CURRENT (mA)
1000
VCE = 300 V
VCE = 100 V
VCE = 50 V
10
1
0.1
10
20
30
40
50
60
70
80
TA - AMBIENT TEMPERATURE (˚C)
0
20
40
60
80
100
90
100
110
Normalized Collector-Base Current vs. Temperature
NORMALIZED ICBO - COLLECTOR-BASE CURRENT
NORMALIZED ICER - DARK CURRENT
Normalized to:
VCE = 100 V
RBE = 106 Ω
TA = 25˚C
100
-20
TA - AMBIENT TEMPERATURE (˚C)
Fig.5 Normalized Dark Current vs. Ambient Temperature
10000
Normalized to:
VCE = 10 V
IF = 10 mA
RBE = 106 Ω
TA = 25˚C
10
Normalized to:
VCE = 10 V
IF = 10 mA
RBE = 106 Ω
TA = 25˚C
9
8
IF = 50 mA
7
6
5
4
3
2
IF = 10 mA
1
0
-60
IF = 5 mA
-40
-20
0
20
40
60
80
100
TA - AMBIENT TEMPERATURE (˚C)
8/9/00
200046A
HIGH VOLTAGE
PHOTOTRANSISTOR OPTOCOUPLERS
H11D1, H11D2, H11D3, H11D4, 4N38
Package Dimensions (Through Hole)
3
2
1
Package Dimensions (Surface Mount)
0.350 (8.89)
0.330 (8.38)
PIN 1
ID.
3
2
PIN 1
ID.
1
0.270 (6.86)
0.240 (6.10)
0.270 (6.86)
0.240 (6.10)
SEATING PLANE
4
5
6
0.350 (8.89)
0.330 (8.38)
5
4
0.070 (1.78)
0.045 (1.14)
6
0.300 (7.62)
TYP
0.070 (1.78)
0.045 (1.14)
0.200 (5.08)
0.135 (3.43)
0.200 (5.08)
0.165 (4.18)
0.016 (0.41)
0.008 (0.20)
0.020 (0.51)
MIN
0.154 (3.90)
0.100 (2.54)
0.016 (0.40)
0.008 (0.20)
0.022 (0.56)
0.016 (0.41)
0° to 15°
0.300 (7.62)
TYP
0.020 (0.51)
MIN
0.022 (0.56)
0.016 (0.41)
0.100 (2.54)
TYP
0.016 (0.40) MIN
0.315 (8.00)
MIN
0.405 (10.30)
MAX
0.100 (2.54)
TYP
Lead Coplanarity : 0.004 (0.10) MAX
Package Dimensions (0.4”Lead Spacing)
3
2
1
Recommended Pad Layout for
Surface Mount Leadform
PIN 1
ID.
0.270 (6.86)
0.240 (6.10)
4
5
0.070 (1.78)
0.060 (1.52)
6
SEATING PLANE
0.350 (8.89)
0.330 (8.38)
0.415 (10.54)
0.070 (1.78)
0.045 (1.14)
0.200 (5.08)
0.135 (3.43)
0.100 (2.54)
0.295 (7.49)
0.030 (0.76)
0.004 (0.10)
MIN
0.154 (3.90)
0.100 (2.54)
0.016 (0.40)
0.008 (0.20)
0° to 15°
0.022 (0.56)
0.016 (0.41)
0.100 (2.54) TYP
0.400 (10.16)
TYP
NOTE
All dimensions are in inches (millimeters)
8/9/00
200046A
HIGH VOLTAGE
PHOTOTRANSISTOR OPTOCOUPLERS
H11D1, H11D2, H11D3, H11D4, 4N38
ORDERING INFORMATION
Order Entry Identifier
Option
S
.S
Description
Surface Mount Lead Bend
SD
.SD
Surface Mount; Tape and reel
W
.W
0.4” Lead Spacing
300
.300
VDE 0884
300W
.300W
VDE 0884, 0.4” Lead Spacing
3S
.3S
VDE 0884, Surface Mount
3SD
.3SD
VDE 0884, Surface Mount, Tape & Reel
QT Carrier Tape Specifications (“D” Taping Orientation)
12.0 ± 0.1
4.85 ± 0.20
4.0 ± 0.1
0.30 ± 0.05
4.0 ± 0.1
Ø1.55 ± 0.05
1.75 ± 0.10
7.5 ± 0.1
16.0 ± 0.3
13.2 ± 0.2
9.55 ± 0.20
0.1 MAX
10.30 ± 0.20
Ø1.6 ± 0.1
User Direction of Feed
NOTE
All dimensions are in millimeters
8/9/00
200046A
MARKING INFORMATION
1
H11D1
2
V XX YY K
6
3
5
4
Definitions
1
Fairchild logo
2
Device number
3
VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
4
Two digit year code, e.g., ‘03’
5
Two digit work week ranging from ‘01’ to ‘53’
6
Assembly package code
Reflow Profile (Black Package, No Suffix)
Temperature (°C)
300
215°C, 10–30 s
250
225 C peak
200
150
Time above 183°C, 60–150 sec
100
50
Ramp up = 3C/sec
0
0
0.5
1
1.5
2
2.5
Time (Minute)
3
3.5
4
4.5
• Peak reflow temperature: 225°C (package surface temperature)
• Time of temperature higher than 183°C for 60–150 seconds
• One time soldering reflow is recommended
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I13
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