Fairchild H11F1TM Photo fet optocoupler Datasheet

H11F1M, H11F2M, H11F3M
Photo FET Optocouplers
tm
Features
General Description
As a remote variable resistor:
■ ≤ 100Ω to ≥ 300MΩ
■ ≥ 99.9% linearity
■ ≤ 15pF shunt capacitance
■ ≥ 100GΩ I/O isolation resistance
The H11FXM series consists of a Gallium-AluminumArsenide IRED emitting diode coupled to a symmetrical
bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal
isolated FET designed for distortion-free control of low
level AC and DC analog signals. The H11FXM series
devices are mounted in dual in-line packages.
As an analog switch:
■ Extremely low offset voltage
■ 60 Vpk-pk signal capability
■ No charge injection or latch-up
■ ton, toff ≤ 15µS
■ UL recognized (File #E90700)
Applications
As a remote variable resistor:
■ Isolated variable attenuator
■ Automatic gain control
■ Active filter fine tuning/band switching
As an analog switch:
■ Isolated sample and hold circuit
■ Multiplexed, optically isolated A/D conversion
Packages
©2007 Fairchild Semiconductor Corporation
H11FXM Rev. 1.0.0
Schematic
ANODE 1
6
CATHODE 2
5
3
4
OUTPUT
TERM.
OUTPUT
TERM.
www.fairchildsemi.com
H11F1M, H11F2M, H11F3M Photo FET Optocouplers
May 2007
Symbol
Parameter
Device
Value
Units
TOTAL DEVICE
TSTG
Storage Temperature
All
-55 to +150
°C
TOPR
Operating Temperature
All
-40 to +100
°C
TSOL
Lead Solder Temperature
All
260 for 10 sec
°C
IF
Continuous Forward Current
All
60
mA
VR
Reverse Voltage
All
5
V
EMITTER
IF(pk)
PD
Forward Current – Peak (10 µs pulse, 1% duty cycle)
All
1
A
LED Power Dissipation 25°C Ambient
All
100
mW
1.33
mW/°C
Derate Linearly from 25°C
DETECTOR
PD
Detector Power Dissipation @ 25°C
All
Derate linearly from 25°C
BV4-6
I4-6
Breakdown Voltage (either polarity)
H11F1M,
H11F2M
Continuous Detector Current (either polarity)
©2007 Fairchild Semiconductor Corporation
H11FXM Rev. 1.0.0
300
mW
4.0
mW/°C
±30
V
H11F3M
±15
V
All
±100
mA
www.fairchildsemi.com
2
H11F1M, H11F2M, H11F3M Photo FET Optocouplers
Absolute Maximum Ratings (TA = 25°C unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Individual Component Characteristics
Symbol
Parameter
Test Conditions
Device
Min.
Typ.*
Max.
Unit
1.3
1.75
V
10
µA
EMITTER
VF
Input Forward Voltage
IF = 16mA
All
IR
Reverse Leakage Current
VR = 5V
All
CJ
Capacitance
V = 0 V, f = 1.0 MHz
All
50
pF
OUTPUT DETECTOR
BV4-6
I4-6
Breakdown Voltage
Either Polarity
Off-State Dark Current
I4-6 = 10µA, IF = 0
H11F1M, H11F2M
30
H11F3M
15
V
V4-6 = 15 V, IF = 0
All
50
nA
V4-6 = 15 V, IF = 0,
TA = 100°C
All
50
µA
R4-6
Off-State Resistance
V4-6 = 15 V, IF = 0
All
C4-6
Capacitance
V4-6 = 15 V, IF = 0,
f = 1MHz
All
MΩ
300
15
pF
Transfer Characteristics
Symbol
Characteristics
Test Conditions
Device
Min
Typ*
Max
Units
H11F1M
200
Ω
H11F2M
330
H11F3M
470
H11F1M
200
H11F2M
330
H11F3M
470
IF = 16mA,
I4-6 = 25µA RMS,
f = 1kHz
All
0.1
%
DC CHARACTERISTICS
R4-6
R6-4
On-State Resistance
On-State Resistance
Resistance, non-linearity
and assymetry
IF = 16mA,
I4-6 = 100µA
IF = 16mA,
I6-4 = 100µA
Ω
AC CHARACTERISTICS
ton
Turn-On Time
RL = 50Ω, IF = 16mA,
V4-6 = 5V
All
25
µS
toff
Turn-Off Time
RL = 50Ω, IF = 16mA,
V4-6 = 5V
All
25
µS
Isolation Characteristics
Symbol
Device
Min.
VISO
Isolation Voltage
Characteristic
f = 60Hz, t = 1 sec.
Test Conditions
All
7500
RISO
Isolation Resistance
VI-O = 500 VDC
All
1011
CISO
Isolation Capacitance
f = 1MHz
All
Typ.*
Max.
Units
VACPEAK
Ω
0.2
pF
*All Typical values at TA = 25°C
©2007 Fairchild Semiconductor Corporation
H11FXM Rev. 1.0.0
www.fairchildsemi.com
3
H11F1M, H11F2M, H11F3M Photo FET Optocouplers
Electrical Characteristics (TA = 25°C unless otherwise specified.)
Figure 1. Resistance vs. Input Current
Figure 2. Output Characteristics
I46 - OUTPUT CURRENT (µA)
10
1
600
IF = 14mA
400
IF = 10mA
IF = 6mA
200
IF = 6mA
-200
IF = 10mA
-400
IF = 14mA
IF = 18mA
-800
1
1
0
-0.2
100
-0.1
Figure 3. LED Forward Voltage vs. Forward Current
0.1
0.2
Figure 4. Off-state Current vs. Ambient Temperature
10000
2.0
NORMALIZED TO:
V46 = 15V
IF = 0mA
TA = 25°C
I46 - NORMALIZED DARK CURRENT
1.8
VF - FORWARD VOLTAGE (V)
0.0
V46 - OUTPUT VOLTAGE (V)
IF - INPUT CURRENT - mA
1.6
1.4
TA = -55°C
TA = 25°C
1.2
1.0
TA = 100°°C
1000
100
10
0.8
1
0.1
1
10
0
100
100
80
V4-6 - MAXIMUM RMS SIGNAL VOLTAGE - mV
NORMALIZED TO
IF = 16mA
I4-6 = 25µA RMS
TA = 25°C
2
n
dia
Me ice
v
De
Observed
Range
1K
1
0.8
0.6
0.4
-50
-25
0
25
50
75
TA - AMBIENT TEMPERATURE - °C
©2007 Fairchild Semiconductor Corporation
H11FXM Rev. 1.0.0
40
80
60
100
Figure 6. Region of Linear Resistance
Figure 5. Resistance vs. Temperature
3
20
TA - AMBIENT TEMPERATURE (°C)
IF - LED FORWARD CURRENT - mA
r(on) - NORMALIZED RESISTANCE
IF = 2mA
IF = 2mA
0
-600
Normalized to:
IF = 16 mA
I46 = 5 µA RMS
0.1
IF = 18mA
MAXIMUM
RMS
VOLTAGE
60
60
40
40
20
20
10
8
10
8
6
6
MAXIMUM
RMS
CURRENT
4
4
2
1
100
100
100
80
2
1000
10K
I4-6 - MAXIMUM RMS SIGNAL CURRENT - µA
r(on) - Normalized Resistance
800
100K
r(on) RESISTANCE - Ω
www.fairchildsemi.com
4
H11F1M, H11F2M, H11F3M Photo FET Optocouplers
Typical Performance Curves
H11F1M, H11F2M, H11F3M Photo FET Optocouplers
Figure 7. Resistive non-linearity vs. D.C. Bias
r(on) - CHANGE IN RESISTANCE – %
5
4
3
2
I4-6 = 10µA RMS
r(on) = 200Ω
1
0
1
50
100
150
200
250
300
350
V4-6 - D.C. BIAS VOLTAGE - mA
©2007 Fairchild Semiconductor Corporation
H11FXM Rev. 1.0.0
www.fairchildsemi.com
5
As a Variable Resistor
As an Analog Signal Switch
ISOLATED SAMPLE AND HOLD CIRCUIT
ISOLATED VARIABLE ATTENUATORS
500K
+
VIN
VOUT
VIN
VIN
50
-
VOUT
VIN
H11F1M
H11F1M
C
IF
IF
IF
VOUT
H11F1M
VOUT
t
IF
LOW FREQUENCY
HIGH FREQUENCY
@1MHz DYNAMIC RANGE 50db
FOR 0 ≤ IF ≤ 30mA
@10KHz DYNAMIC RANGE 70db
FOR 0 ≤ IF ≤ 30mA
Distortion free attenuation of low level A.C. signals is accomplished by varying the IRED current, IF Note the wide dynamic
range and absence of coupling capacitors; D.C. level shifting or
parasitic feedback to the controlling function.
AUTOMATIC GAIN CONTROL
Accuracy and range are improved over conventional FET
switches because the H11FXM has no charge injection from
the control signal. The H11FXM also provides switching of
either polarity input signal up to 30V magnitude.
.
MULTIPLEXED, OPTICALLY-ISOLATED A/D CONVERSION
CALL V1
H11F1M
CALL
Vn
DATA
ACQUISITION
VOUT
V1
V2
+
H74A1
A/D
CONVERTER
Vn
H11F1M
MSB
MSB
-
DATA
INPUT
VIN
LSB H74A1
500K
PROCESS
CONTROL
LOGIC
SYSTEM
LSB
H11F1M
IF
AGC
SIGNAL
This simple circuit provides over 70db of stable gain control for
an AGC signal range of from 0 to 30mA. This basic circuit can
be used to provide programmable fade and attack for electronic
music.
The optical isolation, linearity and low offset voltage of the
H11FXM allows the remote multiplexing of low level analog signals
from such transducers as thermocouplers, Hall effect devices,
strain gauges, etc. to a single A/D converter.
ACTIVE FILTER FINE TUNING/BAND SWITCHING
IF1
TEST EQUIPMENT - KELVIN CONTACT POLARITY
IF2
H11F1M
H11F1M
H11F1M
IF
H11F1M
IF
A
A1
A2
C
ITEST
A3
DEVICE
UNDER
TEST
PARAMETER
SENSING
BOARD
H11F1M
C & D FOR
POLARITY 2
D
B
IF
IF TO
A & B FOR
POLARITY 1
IF
H11F1M
IF1 ADJUSTS f1, IF2 ADJUSTS f2
The linearity of resistance and the low offset voltage of the
H11FXM allows the remote tuning or band-switching of active
filters without switching glitches or distortion. This schematic
illustrates the concept, with current to the H11F1M IRED’s
controlling the filter’s transfer characteristic.
©2007 Fairchild Semiconductor Corporation
H11FXM Rev. 1.0.0
In many test equipment designs the auto polarity function uses
reed relay contacts to switch the Kelvin Contact polarity. These
reeds are normally one of the highest maintenance cost items
due to sticking contacts and mechanical problems. The totally
solid-State H11FXM eliminates these troubles while providing
faster switching.
www.fairchildsemi.com
6
H11F1M, H11F2M, H11F3M Photo FET Optocouplers
Typical Applications
Through Hole
Surface Mount
0.350 (8.89)
0.320 (8.13)
0.350 (8.89)
0.320 (8.13)
0.260 (6.60)
0.240 (6.10)
0.070 (1.77)
0.040 (1.02)
0.260 (6.60)
0.240 (6.10)
0.390 (9.90)
0.332 (8.43)
0.070 (1.77)
0.040 (1.02)
0.320 (8.13)
0.320 (8.13)
0.014 (0.36)
0.010 (0.25)
0.014 (0.36)
0.010 (0.25)
0.200 (5.08)
0.115 (2.93)
0.200 (5.08)
0.115 (2.93)
0.100 (2.54)
0.015 (0.38)
0.012 (0.30)
0.008 (0.20)
0.025 (0.63)
0.020 (0.51)
0.020 (0.50)
0.016 (0.41)
0.100 (2.54)
0.100 [2.54]
15°
0.4" Lead Spacing
0.035 (0.88)
0.006 (0.16)
0.020 (0.50)
0.016 (0.41)
0.012 (0.30)
Recommended Pad Layout for
Surface Mount Leadform
0.350 (8.89)
0.320 (8.13)
0.070 (1.78)
0.060 (1.52)
0.260 (6.60)
0.240 (6.10)
0.425 (10.79)
0.070 (1.77)
0.040 (1.02)
0.100 (2.54)
0.305 (7.75)
0.014 (0.36)
0.010 (0.25)
0.030 (0.76)
0.200 (5.08)
0.115 (2.93)
0.100 (2.54)
0.015 (0.38)
0.020 (0.50)
0.016 (0.41)
0.012 (0.30)
0.008 (0.21)
0.100 [2.54]
0.425 (10.80)
0.400 (10.16)
Note:
All dimensions are in inches (millimeters).
©2007 Fairchild Semiconductor Corporation
H11FXM Rev. 1.0.0
www.fairchildsemi.com
7
H11F1M, H11F2M, H11F3M Photo FET Optocouplers
Package Dimensions
Option
Order Entry Identifier
(Example)
No option
H11F1M
S
H11F1SM
SR2
H11F1SR2M
T
H11F1TM
0.4" Lead Spacing
V
H11F1VM
VDE 0884
TV
H11F1TVM
VDE 0884, 0.4" Lead Spacing
SV
H11F1SVM
VDE 0884, Surface Mount
SR2V
H11F1SR2VM
Description
Standard Through Hole Device
Surface Mount Lead Bend
Surface Mount; Tape and Reel
VDE 0884, Surface Mount, Tape and Reel
Marking Information
1
V
3
H11F1M
2
X YY Q
6
4
5
Definitions
©2007 Fairchild Semiconductor Corporation
H11FXM Rev. 1.0.0
1
Fairchild logo
2
Device number
3
VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
4
One digit year code, e.g., ‘7’
5
Two digit work week ranging from ‘01’ to ‘53’
6
Assembly package code
www.fairchildsemi.com
8
H11F1M, H11F2M, H11F3M Photo FET Optocouplers
Ordering Information
12.0 ± 0.1
4.5 ± 0.20
2.0 ± 0.05
Ø1.5 MIN
4.0 ± 0.1
0.30 ± 0.05
1.75 ± 0.10
11.5 ± 1.0
21.0 ± 0.1
9.1 ± 0.20
Ø1.5 ± 0.1/-0
10.1 ± 0.20
0.1 MAX
24.0 ± 0.3
User Direction of Feed
Reflow Profile
300
280
260
240
220
200
180
160
°C 140
120
100
80
60
40
20
0
260°C
>245°C = 42 Sec
Time above
183°C = 90 Sec
1.822°C/Sec Ramp up rate
33 Sec
0
60
120
180
270
360
Time (s)
©2007 Fairchild Semiconductor Corporation
H11FXM Rev. 1.0.0
www.fairchildsemi.com
9
H11F1M, H11F2M, H11F3M Photo FET Optocouplers
Carrier Tape Specifications
The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and
is not intended to be an exhaustive list of all such trademarks
ACEx®
Build it Now™
CorePLUS™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FPS™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
GTO™
i-Lo™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroPak™
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
PDP-SPM™
Power220®
Power247®
POWEREDGE®
Power-SPM™
PowerTrench®
Programmable Active Droop™
QFET®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
The Power Franchise®
™
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
µSerDes™
UHC®
UniFET™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF
THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE
UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF
FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE
PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to result
in significant injury to the user.
2.
A critical component is any component of a life support
device or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be
published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product that has been
discontinued by Fairchild semiconductor. The datasheet is printed for
reference information only.
Rev. I28
©2007 Fairchild Semiconductor Corporation
H11FXM Rev. 1.0.0
www.fairchildsemi.com
10
H11F1M, H11F2M, H11F3M Photo FET Optocouplers
TRADEMARKS
Similar pages