HUASHAN H1420 Npn silicon transistor Datasheet

NPN S I L I C O N T RA N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
H1420
█ GENERAL PURPOSE AMPLIFIER AND LOW NOISE
AMPLIFIER APPLICATIONS
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
TO-92
T stg ——Storage Temperature………………………… -55~150℃
T j ——Junction Temperature…………………………………150℃
PC——Collector Dissipation…………………………………625mW
1―Emitter,E
2―Base,B
3―Collector,C
VCBO——Collector-Base Voltage………………………………60V
VCEO——Collector-Emitter Voltage……………………………60V
V EB O ——Emitter-Base Voltage………………………………7V
I C ——Collector Current……………………………………200mA
IC——Collector Current……………………………………300mA
IB——Base Current……………………………………………200mA
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol
BVCEO
Characteristics
Collector-Emitter Breakdown Voltage
Min
Typ
Max
60
Unit
Test Conditions
V
IC=1mA, IB=0
ICBO
Collector Cut-off Current
50
nA
VCB=40V, IE=0
IEBO
Emitter Cut-off Current
100
nA
VEB=6V, IC=0
HFE
DC Current Gain
VCE(sat)
VBE
fT
Cob
70
VCE=5V, IC=2mA
700
Collector- Emitter Saturation Voltage
0.22
V
IC=50mA, IB=10mA
Base-Emitter Voltage
1.0
V
VCE=5V, IC=2mA
Current Gain-Bandwidth Product
Output Capacitance
150
400
MHz VCE=5V, IC=10mA
3.5
pF
VCB=10V, IE=0,f=1MHz
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