Renesas H5N2305PF Power mosfets and igbt for pdp Datasheet

April 2010
Renesas Electronics
Power MOSFETs and IGBT for PDP
Merits
Power MOSFET
Low ON resistance
Low Qg
High avalanche tolerance
IGBT
Low VCE (sat)
High-speed switching
PDP System
PDP trends
Scan IC
Y
Panel
Sustain
circuit
X
Power device
High breakdown
voltage
High Intensity
Sustain
circuit
High pressure Gas
Low resistance
High speed switching
High Efficiency
Addressing IC
Optimum FET
Low Cost
TV/PC
Signal
PDP
Signal
processing
Timing
control
Power
supply
IGBT
Wide MOSFET
line-ups
High Speed IGBT
Product Lineup
Power MOSFET
P/N
H7N1005LS
H7N1004LS
H5N2301PF
H5N2306PF
H5N2305PF
H5N2509P
H5N2503P
H5N3004P
H5N3007LS
H5N3003P
H5N3504P
VDSS
(V)
100
100
230
230
230
250
250
300
300
300
350
Maximum Rating
ID
(A)
15
30
25
30
35
30
50
25
25
40
20
VGS
(V)
±20
±20
±30
±30
±30
±30
±30
±30
±30
±30
±30
Electrical Characteristics
VGS(off)
RDS(on)
typ(V)
typ(mΩ)
2.0
85
2.0
25
3.5
65
3.5
48
3.5
30
3.5
53
3.5
40
3.5
75
2.8
120
3.5
60
3.5
100
Package
LDPAK
LDPAK
TO-3PFM
TO-3PFM
TO-3PFM
TO-3PFM
TO-3P
TO-3P
LDPAK
TO-3P
TO-3P
IGBT (High-speed type)
P/N
GN4030V5AB
GN6030V5AB
RJP3053DPP
RJP3063DPP
RJP3054DPP
RJP3064DPP
RJP3055DPP
RJP3065DPP
RJP4065DPP
RJP2557DPK
RJP3056DPK
RJP3057DPK
RJP3066DPK
RJP3067DPK
RJP4067DPK
VCES
(V)
400
600
300
300
300
300
300
300
400
270
300
300
300
300
400
Maximum Rating
IC
(A)
30
30
30
30
35
35
40
40
40
50
45
50
45
50
50
©2010. Renesas Electronics Corporation, All rights reserved.
VGE
(V)
±20
±20
±30
±30
±30
±30
±30
±30
±30
±30
±30
±30
±30
±30
±30
Electrical Charcteristics
VCE(sat)
tf
(V) typ
(μS) typ
1.5
0.12
1.7
0.12
2.0
0.15
1.7
0.30
1.8
0.15
1.5
0.30
1.8
0.15
1.5
0.3
1.6
0.3
1.6
0.15
1.6
0.15
1.6
0.15
1.4
0.3
1.4
0.3
1.7
0.35
Package
TO-220AB
TO-220AB
TO-220FN
TO-220FN
TO-220FN
TO-220FN
TO-220FN
TO-220FN
TO-220FN
TO-3P
TO-3P
TO-3P
TO-3P
TO-3P
TO-3P
April 2010
Renesas Electronics
Power MOSFETs for Backlight Inverter
Achieve Miniaturization and Higher Efficiency
Features
Low on resistance, High-speed switching
Low Qg, Low Qgd
Small package, Built-in 2 elements
Merits
High efficiency
Mniaturization
Example of Application Circuit (LCD TV, TFT Monitor, Note PC)
Full Bridge
Vin
Push/Pull
Half Bridge
Vin
Pch
Pch
HAT3029R(30V)
HAT3031R(60V)
Nch&Pch in 1PKG
HAT3029R(30V)
HAT3031R(60V)
Nch&Pch in 1PKG
HRV103A
Vin
Nch
HAT2215R(80V)
Dual Nch in 1PKG
HRV103A
Nch
Nch
Nch
Vds(peak)=Vin + V(surge)
Vds(peak)=2Vin + V(surge)
Vds(peak)=Vin + V(surge)
Product Lineup
Max.Ratings
No
Type No
RDS(on) (mΩ)
VGS=10v
max
typ
13
16.5
18
23
24
30
15
19
20
25
Qgd
(nc)
1.8
1.1
3.2
5.8
5.2
Qg
(nC)
7.5
4.4
10
17
11.5
40
19
24
1.2
4.6
40
58
27
34
1.1
3
6.6
29
43
25
32
3.2
10
±20
3.4
100
145
88
115
1.3
7.3
-60
±20
6
60
85
40
50
8
37
11 HAT3029R
30
-30
±20
+10/-20
6
-6
40
36
58
53
27
25
34
32
1.1
4.4
3.1
11.5
12 HAT3037R
45
-45
±20
+10/-20
5
-3.8
55
95
75
130
44
75
55
95
0.9
1.5
3.0
4.9
13 HAT3010R
60
-60
±20
±20
6
-5
32
90
45
130
25
60
32
76
8
8
18
18
1
2
3
4
5
HAT2199R
HAT2208R
HAT2256R
HAT1131R
HAT1132R
Single
6 HAT2276R
7 HAT2280R
8 HAT2275R
Nch+Nch
9 HAT2215R
10 HAT1126R
14 HAT3031R
15 HAT3038R
16 HAT3021R
17 HAT3019R
Pch+Pch
Nch+Pch
VGS=4.5v(8v)
max
typ
17
25
24
35
28
41
21.5
31
27.5
40
VDSS
(V)
30
30
60
-30
-30
VGss
(V)
±20
±20
±20
±20
±20
ID
(A)
11
9
8
-9
-7
30
±20
7.5
27
30
±20
6
60
±20
80
60
±20
6.6
29
43
25
32
2.8
10
-60
60
-60
80
-80
100
-100
+10/-20
±20
±20
±20
±20
±20
±20
-3.4
5
-3.8
3.4
-2.6
3.5
-2.3
120
55
90
100
200
120
300
175
80
130
145
290
160
500
95
48
80
90
165
90
240
120
60
100
115
210
115
300
2.2
1.4
2.8
1.3
2.4
3.2
3.1
6.0
7.3
16
15
16
©2010. Renesas Electronics Corporation, All rights reserved.
Similar pages