Renesas H5N2519P Silicon n channel mos fet high speed power switching Datasheet

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H5N2519P
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G0478-0200
Rev.2.00
Nov.19.2004
Features
• Low on-resistance
• Low leakage current
• High speed switching
Outline
TO-3P
D
1. Gate
2. Drain (Flange)
3. Source
G
S
1
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
Rev.2.00 Nov. 19, 2004 page 1 of 6
Symbol
VDSS
VGSS
ID
Note1
ID (pulse)
IDR
Note3
IAP
EARNote3
Pch Note2
θch-c
Tch
Tstg
Ratings
250
±30
65
195
65
22
30.2
150
0.833
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
H5N2519P
Electrical Characteristics
(Ta = 25°C)
Item
Drain to Source breakdown voltage
Zero Gate voltage drain current
Gate to Source leak current
Gate to Source cutoff voltage
Forward transfer admittance
RDS(on)
Min
250
—
—
3.0
28
—
Typ
—
—
—
—
47
0.029
Max
—
1
±0.1
4.5
—
0.035
Unit
V
µA
µA
V
S
Ω
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
—
—
—
—
—
—
—
—
—
—
4900
700
75
65
310
220
220
120
28
52
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
VDS = 25 V
VGS = 0
f = 1 MHz
Body-Drain diode forward voltage
Body-Drain diode reverse recovery time
VDF
trr
—
—
1.10
200
1.65
—
V
ns
IF = 65 A, VGS = 0 Note4
Body-Drain diode reverse recovery
charge
Notes: 4. Pulse test
Qrr
—
1.6
—
µC
Static Drain to Source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate charge
Gate to Source charge
Gate to Drain charge
Rev.2.00 Nov. 19, 2004 page 2 of 6
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|yfs|
Test conditions
ID = 10 mA, VGS = 0
VDS = 250 V, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 32.5 A, VDS = 10 V Note4
ID = 32.5 A, VGS = 10 VNote4
ID = 32.5 A
VGS = 10 V
RL = 3.9 Ω
Rg = 10 Ω
VDD = 200 V
VGS = 10 V
ID = 65 A
IF = 65 A, VGS = 0
diF/dt = 100 A/µs
H5N2519P
Main Characteristics
Power vs. Temperature Derating
ID (A)
300
150
100
100
50
PW
DC
30
Drain Current
Pch (W)
Channel Dissipation
Maximum Safe Operation Area
1000
200
er
10
10
s
m
s(
1s
at
ion
3
Operation in
1 this area is
limited by RDS(on)
ho
t)
(T
25
°C
)
0.3
0
50
100
150
Case Temperature
Ta = 25°C
200
1
Tc (°C)
100
VDS = 10 V
Pulse Test
Pulse Test
7V
6V
60
5.5 V
40
5V
20
ID (A)
6.5 V
Drain Current
80
10 V
30
3
10
100 300 1000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
Typical Output Characteristics
100
ID (A)
=
c=
0.1
Drain Current
Op
10
µ
0µ s
s
10
1m
80
60
40
20
Tc = 75°C
VGS = 4.5 V
0
4
8
12
Drain to Source Voltage
0
16
20
VDS (V)
Drain to Source Saturation Voltage
VDS(on) (V)
2.5
Pulse Test
I D = 65 A
2
1.5
Drain to Source on State Resistance
RDS(on) (Ω)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
25°C
–25°C
2
4
6
Gate to Source Voltage
8
10
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
0.2
Pulse Test
VGS = 10 V
0.1
0.05
32.5 A
1
0.02
0.5
0
10 A
0.01
12
4
8
Gate to Source Voltage
Rev.2.00 Nov. 19, 2004 page 3 of 6
16
20
VGS (V)
1
2
5
10 20
50
Drain Current ID (A)
100
Forward Transfer Admittance vs.
Drain Current
Static Drain to Source on State Resistance
vs. Temperature
0.100
Pulse Test
V GS = 10 V
0.080
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS(on) (Ω)
H5N2519P
I D = 65 A
0.060
32.5 A
0.040
10 A
0.020
0
–40
0
40
80
120
Case Temperature Tc (°C)
100
50
20
10
75°C
2
1
0.2
0.2
100
50
20
10
0.1
Drain Current
ID (A)
50 100
Ciss
1000
200
100
VGS = 0
f = 1 MHz
10
0
20
40
60
80
100
Drain to Source Voltage VDS (V)
20
300
16
12
VDD
8
V DS = 200 V
100 V
50 V
40
80
120
160
Gate Charge Qg (nC)
Rev.2.00 Nov. 19, 2004 page 4 of 6
4
0
200
10000
Switching Time t (ns)
VGS
VGS (V)
20
V DS = 50 V
100 V
200 V
400
Crss
50
0.3
1
3
10
30
100
Reverse Drain Current IDR (A)
I D = 65 A
Coss
500
di / dt = 100 A / µs
V GS = 0, Ta = 25°C
Gate to Source Voltage
VDS (V)
10 20
2000
Dynamic Input Characteristics
Drain to Source Voltage
5
5000
Capacitance C (pF)
Reverse Recovery Time trr (ns)
2
10000
200
0
0.5 1
Typical Capacitance vs.
Drain to Source Voltage
500
100
V DS = 10 V
Pulse Test
0.5
160
1000
200
25°C
5
Body-Drain Diode Reverse
Recovery Time
500
Tc = –25°C
1000
Switching Characteristics
V GS = 10 V, V DD = 125 V
PW = 5 µs, duty < 1 %
R g =10 Ω
tf
tr
t d(off)
100
tf
t d(on)
tr
10
0.1 0.3
1
3
Drain Current
10
30
ID (A)
100
H5N2519P
Gate to Source Cutoff Voltage
vs. Case Temperature
Reverse Drain Current vs.
Source to Drain Voltage
5
Gate to Source Cutoff Voltage
V GS(off) (V)
Reverse Drain Current
IDR (A)
100
80
60
V GS = 0 V
40
20
10 V
5V
Pulse Test
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
2.0
V DS = 10 V
I D = 10 mA
4
3
1 mA
0.1 mA
2
1
0
-50
VSD (V)
0
50
100
150
Case Temperature Tc (°C)
200
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 0.833°C/W, Tc = 25°C
0.1
0.05
PDM
0.03
0.02
1
0.0
0.01
10 µ
D=
e
PW
uls
p
ot
T
h
1s
PW
T
100 µ
1m
10 m
100 m
Pulse Width PW (s)
Switching Time Test Circuit
1
Waveform
Vout
Monitor
Vin Monitor
10
90%
D.U.T.
RL
Vin
10Ω
Vin
10 V
V DD
= 125 V
Vout
10%
10%
90%
td(on)
Rev.2.00 Nov. 19, 2004 page 5 of 6
tr
10%
90%
td(off)
tf
H5N2519P
Package Dimensions
Unit: mm
4.8 ± 0.2
1.5
0.3
19.9 ± 0.2
2.0
14.9 ± 0.2
0.5
1.0
φ3.2 ± 0.2
5.0 ± 0.3
As of January, 2003
15.6 ± 0.3
1.6
2.0
1.4 Max
18.0 ± 0.5
2.8
1.0 ± 0.2
3.6
0.6 ± 0.2
0.9
1.0
5.45 ± 0.5
5.45 ± 0.5
Package Code
JEDEC
JEITA
Mass (reference value)
TO-3P
—
Conforms
5.0 g
Ordering Information
Part Name
H5N2519P-E
Quantity
30 pcs
Shipping Container
Plastic magazine
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00 Nov. 19, 2004 page 6 of 6
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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