Renesas H5N2802PF Silicon n channel mos fet silicon n channel mos fet Datasheet

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H5N2802PF
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1298-0200
Rev.2.00
Dec 12, 2008
Features
• Low on-resistance
• Low leakage current
• High speed switching
Outline
RENESAS Package code: PRSS0003ZA-A
(Package name: TO-3PFM)
D
1. Gate
2. Drain
3. Source
G
S
1
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
REJ03G1298-0200 Rev.2.00, Dec 12, 2008
Page 1 of 6
Symbol
VDSS
VGSS
ID
ID (pulse)Note1
IDR
IDR (pulse)Note1
IAPNote3
EARNote3
Pch Note2
Ratings
280
±30
25
100
25
100
13
10.2
60
Unit
V
V
A
A
A
A
A
mJ
W
θch-c
Tch
Tstg
2.08
150
–55 to +150
°C/W
°C
°C
H5N2802PF
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Forward transfer admittance
RDS(on)
Min
280
—
—
3.0
15
—
Typ
—
—
—
—
27
0.057
Max
—
1
±0.1
4.0
—
0.066
Unit
V
µA
µA
V
S
Ω
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
—
—
—
—
—
—
—
—
—
—
3600
450
32
50
90
120
75
72
18
24
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
VDS = 25 V, VGS = 0,
f = 1 MHz
Body-drain diode forward voltage
Body-drain diode reverse recovery time
VDF
trr
Qrr
0.88
200
1.4
1.40
—
—
V
ns
µC
IF = 25 A, VGS = 0 Note4
Body-drain diode reverse recovery
charge
Notes: 4. Pulse test
—
—
—
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|yfs|
REJ03G1298-0200 Rev.2.00, Dec 12, 2008
Page 2 of 6
Test conditions
ID = 10 mA, VGS = 0
VDS = 280 V, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 12.5 A, VDS = 10 V Note4
ID = 12.5 A, VGS = 10 V Note4
ID = 12.5 A, VGS = 10 V,
RL = 11.2 Ω, Rg = 10 Ω
VDD = 220 V, VGS = 10 V,
ID = 25 A
IF = 25 A, VGS = 0,
diF/dt = 100 A/µs
H5N2802PF
Main Characteristics
Typical Output Characteristics
Maximum Safe Operation Area
100
10
100
PW
=
10
0
10
1
µs
Drain Current ID (A)
Drain Current ID (A)
1000
µs
Operation in this
area is limited by
RDS(on)
0.1
Pulse Test
Ta = 25°C
7V
80
6.5 V
8V
10 V
60
6V
40
5.5 V
20
VGS = 5 V
Tc = 25°C
1 shot
0.01
0.1
1
10
12
16
20
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Drain to Source on State Resistance
RDS(on) (Ω)
Typical Transfer Characteristics
−25°C
25°C
80
Tc = 75°C
60
40
20
0
2
4
6
8
1
Pulse Test
VGS = 10 V
Ta = 25°C
0.1
0.01
10
1
10
100
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
Body-Drain Diode Reverse
Recovery Time (Typical)
1000
1000
0.16
Pulse Test
VGS = 10 V
0.12
ID = 25 A
0.08
5A
0.04
0
-25
Reverse Recovery Time trr (ns)
Drain Current ID (A)
8
Drain to Source Voltage VDS (V)
VDS = 10 V
Pulse Test
0
4
0
1000
Drain to Source Voltage VDS (V)
100
Static Drain to Source on State Resistance
RDS(on) (Ω)
100
100
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
10
0
25
50
75
100 125 150
Case Temperature Tc (°C)
REJ03G1298-0200 Rev.2.00, Dec 12, 2008
Page 3 of 6
1
10
Reverse Drain Current IDR (A)
100
H5N2802PF
Typical Capacitance vs.
Drain to Source Voltage (Typical)
1000
Coss
100
Crss
10
0
Reverse Drain Current IDR (A)
100
80
Ta = 25°C
50
100
150
16
ID = 25 A
Ta = 25 °C
VGS
VDD = 220 V
100 V
300
12
50 V
VDS
200
8
100
4
VDD = 220 V
100 V
50 V
0
20
0
40
60
80
Drain to Source Voltage VDS (V)
Gate Charge Qg (nC)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
VGS = 0
Pulse Test
Ta = 25 °C
60
40
20
0
400
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
REJ03G1298-0200 Rev.2.00, Dec 12, 2008
Page 4 of 6
5
100
VDS = 10 V
ID = 10 mA
4
1 mA
3
0.1 mA
2
1
0
-25
0
25
50
75
Case Temperature
100 125 150
Tc (°C)
Gate to Source Voltage VGS (V)
Ciss
Drain to Source Voltage VDS (V)
VGS = 0
f = 1 MHz
Gate to Source Cutoff Voltage VGS(off) (V)
Capacitance C (pF)
10000
Dynamic Input Characteristics (Typical)
H5N2802PF
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
D=1
1
0.5
0.3
0.2
0.1
0.1
0.05
0.03
0.02
θch – c (t) = γ s (t) • θch – c
θch – c = 2.08°C/W, Tc = 25°C
0.01
0.01
ot
1sh
lse
pu
PDM
0.003
D=
PW
T
PW
T
0.001
10 µ
100 µ
1m
10 m
Pulse Width
100 m
1
10
PW (s)
Switching Time Test Circuit
Vin Monitor
100
Waveform
90%
Vout
Monitor
D.U.T.
Vin
10%
RL
Vout
10 Ω
Vin
10 V
VDD
= 140 V
10%
90%
td(on)
REJ03G1298-0200 Rev.2.00, Dec 12, 2008
Page 5 of 6
10%
tr
90%
td(off)
tf
H5N2802PF
Package Dimensions
Previous Code
TO-3PFM / TO-3PFMV
15.6 ± 0.3
2.0 ± 0.3
2.7 ± 0.3
φ3.2
+ 0.4
– 0.2
4.0 ± 0.3
2.6
0.86
Unit: mm
5.5 ± 0.3
3.2 ± 0.3
1.6
0.86
0.66
5.45 ± 0.5
MASS[Typ.]
5.2g
21.0 ± 0.5
RENESAS Code
PRSS0003ZA-A
5.0 ± 0.3
JEITA Package Code
SC-93
5.0 ± 0.3
19.9 ± 0.3
Package Name
TO-3PFM
+ 0.2
– 0.1
0.2
0.9 +– 0.1
5.45 ± 0.5
Ordering Information
Part No.
H5N2802PF-E
Quantity
360 pcs
REJ03G1298-0200 Rev.2.00, Dec 12, 2008
Page 6 of 6
Shipping Container
Box (Tube)
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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and regulations, and procedures required by such laws and regulations.
4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this
document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document,
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