Renesas H5N3007FL-M0-ET2 300v - 15a - mos fet high speed power switching Datasheet

Preliminary Datasheet
H5N3007FL-M0
300V - 15A - MOS FET
High Speed Power Switching
R07DS0995EJ0100
Rev.1.00
Jan 09, 2013
Features
 Low on-resistance
RDS(on) = 0.12  typ. (at ID = 7.5 A, VGS = 10 V, Ta = 25C)
 Low leakage current
 High speed switching
 Built-in fast recovery diode
Outline
RENESAS Package code: PRSS0003AF-A
(Package name: TO-220FL)
D
1. Gate
2. Drain
3. Source
G
1
2 3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel to case thermal impedance
Channel dissipation
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
ID
ID (pulse) Note1
IDR
IDR (pulse) Note1
IAPNote3
EARNote3
ch-c
Pch Note2
Tch
Tstg
Ratings
300
30
15
60
15
60
15
13.5
3.57
35
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
C/W
W
C
C
Notes: 1. PW  10 s, duty cycle  1%
2. Value at Tc = 25C
3. STch = 25C, Tch  150C
R07DS0995EJ0100 Rev.1.00
Jan 09, 2013
Page 1 of 6
H5N3007FL-M0
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|yfs|
RDS(on)
Min
300
—
—
1.5
9
—
Typ
—
—
—
—
15
0.12
Max
—
10
0.1
4.0
—
0.16
Unit
V
A
A
V
S

Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
—
—
—
—
—
—
—
—
—
—
2180
275
77
35
50
160
40
80
10
40
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
VDF
trr
—
—
0.85
110
1.30
—
V
ns
Test conditions
ID = 10 mA, VGS = 0
VDS = 300 V, VGS = 0
VGS = 30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 7.5 A, VDS = 10 V Note4
ID = 7.5 A, VGS = 10 V Note4
VDS = 25 V
VGS = 0
f = 1 MHz
ID = 7.5 A
VGS = 10 V
RL = 20 
Rg = 10 
VDD = 240 V
VGS = 10 V
ID = 15 A
IF = 15 A, VGS = 0 Note4
IF = 15 A, VGS = 0
diF/dt = 100 A/s
Notes: 4. Pulse test
R07DS0995EJ0100 Rev.1.00
Jan 09, 2013
Page 2 of 6
H5N3007FL-M0
Preliminary
Main Characteristics
Maximum Safe Operation Area
Typical Output Characteristics
60
100
PW
10
1
10
=
10
0
Drain Current ID (A)
Drain Current ID (A)
1000
μs
μs
Operation in this
area is limited by
RDS(on)
0.1
Ta = 25°C
Pulse Test
50
6V
15 V, 10 V
8V
40
5.5 V
5V
30
20
4.5 V
10
VGS = 4 V
Tc = 25°C
1 shot
0.01
0.1
1
10
100
8
12
16
20
Typical Transfer Characteristics
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Drain to Source on State Resistance
RDS(on) (Ω)
Tc = −25°C
50
25°C
75°C
40
30
20
VDS = 10 V
Pulse Test
0
2
4
6
8
10
1
0.1
0.01
1
VGS = 10 V
Ta = 25°C
Pulse Test
10
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
Body-Drain Diode Reverse
Recovery Time (Typical)
0.5
VGS = 10 V
Pulse Test
0.4
0.3
ID = 25 A
0.2
15 A 7.5 A
0.1
0
-25
Reverse Recovery Time trr (ns)
Drain Current ID (A)
4
Drain to Source Voltage VDS (V)
10
Static Drain to Source on State Resistance
RDS(on) (Ω)
0
Drain to Source Voltage VDS (V)
60
0
0
1000
100
1000
100
di / dt = 100 A / μs
VGS = 0, Ta = 25°C
10
0
25
50
75
100 125 150
Case Temperature Tc (°C)
R07DS0995EJ0100 Rev.1.00
Jan 09, 2013
1
10
100
Reverse Drain Current IDR (A)
Page 3 of 6
H5N3007FL-M0
Preliminary
Typical Capacitance vs.
Drain to Source Voltage
1000
Coss
100
10
0
Crss
VGS = 0
f = 1 MHz
Ta = 25°C
100
Reverse Drain Current IDR (A)
VGS
VDD = 240 V
100 V
300
VDS
50 V
8
100
4
VDD = 240 V
100 V
50 V
20
0
40
0
60
80
Drain to Source Voltage VDS (V)
Gate Charge Qg (nC)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
40
30
20
10
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
R07DS0995EJ0100 Rev.1.00
Jan 09, 2013
16
12
200
150
VGS = 0
Ta = 25°C
Pulse Test
0
ID = 15 A
Ta = 25 °C
0
50
60
50
400
5
Gate to Source Voltage VGS (V)
Ciss
Gate to Source Cutoff Voltage VGS(off) (V)
Capacitance C (pF)
10000
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics (Typical)
100
VDS = 10 V
4
ID = 10 mA
3
1 mA
2
0.1 mA
1
0
-25
0
25
50
75
Case Temperature
100 125 150
Tc (°C)
Page 4 of 6
H5N3007FL-M0
Preliminary
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
10
Tc = 25°C
1
D=1
0.5
0.2
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 3.57°C/W, Tc = 25°C
0.1
0.1 0.05
0.02
uls
ot p
1
0.0
PDM
e
D=
1sh
0.01
100 μ
PW
T
PW
T
1m
10 m
100 m
1
10
100
Pulse Width PW (s)
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
10 Ω
Vin
10 V
Vin
Vout
10%
10%
10%
VDD
= 150 V
90%
td(on)
R07DS0995EJ0100 Rev.1.00
Jan 09, 2013
tr
90%
td(off)
tf
Page 5 of 6
H5N3007FL-M0
Preliminary
Package Dimensions
Package Name
TO-220FL
JEITA Package Code
⎯
Previous Code
TO-220FL
RENESAS Code
PRSS0003AF-A
Unit: mm
6.5 ± 0.3
3.0 ± 0.3
2.8 ± 0.2
3.2 ± 0.2
3.6 ± 0.3
12.5 ± 0.5
15.0 ± 0.3
10.0 ± 0.3
MASS[Typ.]
1.5g
1.15 ± 0.2
1.15 ± 0.2
0.75 ± 0.15
0.40 ± 0.15
4.5 ± 0.2
2.54 ± 0.25
2.6 ± 0.2
2.54 ± 0.25
Ordering Information
Orderable Part Number
H5N3007FL-M0-E#T2
R07DS0995EJ0100 Rev.1.00
Jan 09, 2013
Quantity
50 pcs
Shipping Container
Tube
Page 6 of 6
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