Renesas H5N3011P Silicon n channel mos fet high speed power switching Datasheet

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H5N3011P
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G0385-0200
Rev.2.00
Aug.05.2004
Features
• Low on-resistance
• Low leakage current
• High speed switching
Outline
TO-3P
D
1. Gate
2. Drain (Flange)
3. Source
G
S
1
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
Rev.2.00, Aug.05.2004, page 1 of 6
Symbol
VDSS
VGSS
ID
ID (pulse)Note1
IDR
IDR (pulse)Note1
Ratings
300
±30
88
176
88
176
Unit
V
V
A
A
A
A
IAPNote3
EARNote3
Pch Note2
θch-c
Tch
Tstg
30
54
150
0.833
150
–55 to +150
A
mJ
W
°C/W
°C
°C
H5N3011P
Electrical Characteristics
(Ta = 25°C)
Item
Drain to Source breakdown voltage
Zero Gate voltage Drain current
Gate to Source leak current
Gate to Source cutoff voltage
Forward transfer admittance
Static Drain to Source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate charge
Gate to Source charge
Gate to Drain charge
Body-Drain diode forward voltage
Body-Drain diode reverse recovery time
Body-Drain diode reverse recovery
charge
Notes: 4. Pulse test
Rev.2.00, Aug.05.2004, page 2 of 6
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|yfs|
RDS(on)
Min
300
—
—
3.0
33
—
Typ
—
—
—
—
56
0.042
Max
—
1
±0.1
4.5
—
0.048
Unit
V
µA
µA
V
S
Ω
Test conditions
ID = 10 mA, VGS = 0
VDS = 300 V, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 44 A, VDS = 10 V Note4
ID = 44 A, VGS = 10 VNote4
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
—
—
—
—
—
—
—
—
—
—
5000
640
65
60
370
200
280
95
25
40
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
ID = 44 A
VGS = 10 V
RL = 3.4 Ω
Rg = 10 Ω
VDF
trr
Qrr
—
—
—
1.0
260
2.5
1.5
—
—
V
ns
µC
IF = 88 A, VGS = 0 Note4
IF = 88 A, VGS = 0
diF/dt = 100 A/µs
VDS = 25 V
VGS = 0
f = 1 MHz
VDD = 240 V
VGS = 10 V
ID = 88 A
H5N3011P
Main Characteristics
Power vs. Temperature Derating
300
100
ID (A)
150
100
50
1m
30
Operation in
PW = 10 ms
(1shot)
0.3
Ta = 25°C
0.01
50
100
Case Temperature
150
1
200
Tc (°C)
Typical Output Characteristics
Pulse Test
6V
60
5.5 V
40
20
VGS = 5 V
4
8
12
Drain to Source Voltage
VDS = 10 V
Pulse Test
80
6
ID = 88 A
4
Drain to Source on State Resistance
RDS(on) (Ω)
Pulse Test
60
40
20
Tc = 75°C
0
20
16
VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
8
100 300 1000
30
3
10
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
ID (A)
8V
DC Operation
(Tc = 25°C)
100
Drain Current
ID (A)
Drain Current
10 V
80
Drain to Source Saturation Voltage
VDS(on) (V)
10
µ
0µ s
s
0.1
0
0
10
3 this area is
1 limited by RDS(on)
0.03
100
s
10
Drain Current
Pch (W)
Channel Dissipation
Maximum Safe Operation Area
1000
200
25°C
−25°C
2
4
6
Gate to Source Voltage
10
8
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
0.1
VGS = 10 V, 15 V
0.05
0.02
0.01
0.005
44 A
2
20 A
0
0.002
Pulse Test
0.001
12
4
8
Gate to Source Voltage
Rev.2.00, Aug.05.2004, page 3 of 6
16
20
VGS (V)
1
3
10
30
100 300
Drain Current ID (A)
1000
0.16
ID = 88 A
0.12
44 A
0.08
20 A
0.04
0
−25
0
25
50
75
Case Temperature
100 125 150
25°C
3
75°C
1
0.3
VDS = 10 V
Pulse Test
0.1
0.1
0.3
3
1
10
100
Typical Capacitance vs.
Drain to Source Voltage
Capacitance C (pF)
100
50
20
10
5
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
2
30
ID (A)
VGS = 0
f = 1 MHz
30000
10000
Ciss
3000
1000
Coss
300
100
Crss
30
10
0
0.3
1
3
10
30
100
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
VGS
200
12
8
100
4
VDD = 240 V
100 V
50 V
40
80
Gate Charge
Rev.2.00, Aug.05.2004, page 4 of 6
120
160
Qg (nC)
0
200
Switching Time t (ns)
VDD = 50 V
100 V
240 V
VDS
VGS (V)
ID = 88 A
50
100
150
Drain to Source Voltage VDS (V)
Switching Characteristics
10000
16
Gate to Source Voltage
400
VDS (V)
10
100000
1
0.1
Drain to Source Voltage
Tc = −25°C
Drain Current
200
0
30
Tc (°C)
500
300
100
Body-Drain Diode Reverse
Recovery Time
1000
Reverse Recovery Time trr (ns)
Forward Transfer Admittance vs.
Drain Current
Static Drain to Source on State Resistance
vs. Temperature
0.2
VGS = 10 V
Pulse Test
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS(on) (Ω)
H5N3011P
VGS = 10 V, VDD = 150 V
PW = 5 µs, duty < 1 %
RG = 10 Ω
1000
tf
tr
td(off)
tf
100
td(on)
tr
10
0.1
0.3
1
3
Drain Current
10
30
ID (A)
100
H5N3011P
Gate to Source Cutoff Voltage
vs. Case Temperature
Reverse Drain Current vs.
Source to Drain Voltage
5
Gate to Source Cutoff Voltage
VGS(off) (V)
Reverse Drain Current
IDR (A)
100
80
60
VGS = 0 V
40
10 V
5V
20
Pulse Test
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
2.0
VDS = 10 V
ID = 10 mA
4
1 mA
3
0.1 mA
2
1
0
-25
0
VSD (V)
25
50
75
Case Temperature
100 125 150
Tc (°C)
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 0.833°C/W, Tc = 25°C
0.1
0.05
PDM
0.03
0.02
1
0.0
0.01
10 µ
D=
e
PW
uls
p
ot
T
h
1s
100 µ
PW
T
1m
10 m
100 m
Pulse Width PW (s)
1
Switching Time Test Circuit
10
Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
Vin
10Ω
Vin
10 V
V DD
= 150 V
Vout
10%
10%
90%
td(on)
Rev.2.00, Aug.05.2004, page 5 of 6
tr
10%
90%
td(off)
tf
H5N3011P
Package Dimensions
15.6 ± 0.3
Unit: mm
1.5
0.3
19.9 ± 0.2
2.0
14.9 ± 0.2
0.5
1.0
φ3.2 ± 0.2
5.0 ± 0.3
As of January, 2003
4.8 ± 0.2
1.6
2.0
1.4 Max
18.0 ± 0.5
2.8
1.0 ± 0.2
3.6
5.45 ± 0.5
0.6 ± 0.2
0.9
1.0
5.45 ± 0.5
Package Code
JEDEC
JEITA
Mass (reference value)
TO-3P
—
Conforms
5.0 g
Ordering Information
Part Name
H5N3011P-E
Quantity
30 pcs
Shipping Container
Plastic magazine
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00, Aug.05.2004, page 6 of 6
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Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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