Renesas H7N0308CF-E Silicon n channel mos fet high speed power switching Datasheet

H7N0308CF
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1123-0300
(Previous: ADE-208-1570A)
Rev.3.00
Sep 07, 2005
Features
• Low on-resistance
RDS (on) = 3.8 mΩ typ.
• Low drive current
• 4.5 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0003AE-A
(Package name: TO-220C•FM)
D
1. Gate
2. Drain
3. Source
G
1 2
Rev.3.00 Sep 07, 2005 page 1 of 3
3
S
H7N0308CF
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Symbol
VDSS
Value
30
Unit
V
VGSS
ID
±20
60
V
A
240
60
A
A
Pch
θ ch-c
30
4.17
W
°C/W
Channel to ambient thermal impedance
Channel temperature
θ ch-a
Tch
62.5
150
°C/W
°C
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
Tstg
–55 to +150
°C
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
ID (pulse)
IDR
Note 1
Note 2
Channel dissipation
Channel to case thermal impedance
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Symbol
V (BR) DSS
Min
30
Typ
—
Max
—
Unit
V
Test Conditions
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
Gate to source leak current
V (BR) GSS
IGSS
±20
—
—
—
—
±10
V
µA
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
IDSS
—
1.0
—
—
10
2.5
µA
V
VDS = 30 V, VGS = 0
Note 3
ID = 1 mA, VDS = 10 V
Zero gate voltage drain current
Gate to source cutoff voltage
VGS (off)
Static drain to source on state resistance
RDS (on)
—
—
3.8
6.0
4.8
8.5
mΩ
mΩ
ID = 30 A, VGS = 10 V
Note 3
ID = 30 A, VGS = 4.5 V
Forward transfer admittance
Input capacitance
|yfs|
Ciss
42
—
70
3350
—
—
S
pF
Output capacitance
Reverse transfer capacitance
Coss
Crss
—
—
840
480
—
—
pF
pF
ID = 30 A, VDS = 10 V
VDS = 10 V
VGS = 0
f = 1 MHz
Total gate charge
Gate to source charge
Qg
Qgs
—
—
52
11
—
—
nC
nC
Gate to drain charge
Turn-on delay time
Qgd
td (on)
—
—
10
30
—
—
nC
ns
Rise time
Turn-off delay time
tr
td (off)
—
—
370
80
—
—
ns
ns
Fall time
Body-drain diode forward voltage
tf
VDF
—
—
27
0.90
—
—
ns
V
trr
—
55
—
ns
Body-drain diode reverse recovery time
Note:
3. Pulse test
Rev.3.00 Sep 07, 2005 page 2 of 3
Note 3
VDD = 10 V
VGS = 10 V
ID = 60 A
VGS = 10 V, ID = 30 A
RL = 0.33 Ω
Rg = 4.7 Ω
IF = 60 A, VGS = 0
IF = 60 A, VGS = 0
diF/dt = 50 A/µs
Note 3
H7N0308CF
Package Dimensions
RENESAS Code
Package Name
MASS[Typ.]
PRSS0003AE-A
TO-220CFM / TO-220CFMV
1.9g
0.6 ± 0.1
2.54
4.1 ± 0.3
1.0 ± 0.2
1.15 ± 0.2
φ 3.2 ± 0.2
12.0 ± 0.3
10.0 ± 0.3
2.54
Unit: mm
4.5 ± 0.3
2.7 ± 0.2
15.0 ± 0.3

2.5 ± 0.2
13.6 ± 1.0
JEITA Package Code
0.7 ± 0.1
Ordering Information
Part Name
Quantity
Shipping Container
H7N0308CF-E
50 pcs
Plastic magazine
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.3.00 Sep 07, 2005 page 3 of 3
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