Renesas H7N0311LSTL-E Silicon n channel mos fet high speed power switching Datasheet

H7N0311LD, H7N0311LS, H7N0311LM
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1126-0500
(Previous: ADE-208-1423C)
Rev.5.00
Apr 07, 2006
Features
• Low on-resistance
RDS (on) = 7.0 mΩ typ.
• Low drive current
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK (L) )
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
4
4
1
1
2
1. Gate
2. Drain
3. Source
4. Drain
2
3
3
H7N0311LD
H7N0311LS
RENESAS Package code: PRSS0004AE-C
(Package name: LDPAK (S)-(2) )
D
4
G
1
2
3
H7N0311LM
Rev.5.00 Apr 07, 2006 page 1 of 7
S
H7N0311LD, H7N0311LS, H7N0311LM
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Symbol
VDSS
Value
30
Unit
V
VGSS
ID
±20
45
V
A
180
45
A
A
Pch
θ ch-c
60
2.08
W
°C/W
Tch
Tstg
150
–55 to +150
°C
°C
Note 1
Drain peak current
Body to drain diode reverse drain current
ID (pulse)
IDR
Note 2
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
V (BR) DSS
V (BR) GSS
30
±20
—
—
—
—
V
V
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
Gate to source leak current
Zero gate voltage drain current
IGSS
IDSS
—
—
—
—
±10
10
µA
µA
VGS = ±16 V, VDS = 0
VDS = 30 V, VGS = 0
Gate to source cutoff voltage
Static drain to source on state
resistance
VGS (off)
RDS (on)
1.0
—
—
7.0
2.5
8.8
V
mΩ
ID = 1 mA, VDS = 10 V
Note 3
ID = 22.5 A, VGS = 10 V
|yfs|
—
27
11
45
16
—
mΩ
S
ID = 22.5 A, VGS = 5 V
Note 3
ID = 22.5 A, VDS = 10 V
Input capacitance
Output capacitance
Ciss
Coss
—
—
1650
440
—
—
pF
pF
Reverse transfer capacitance
Total gate charge
Crss
Qg
—
—
250
28
—
—
pF
nC
VDS = 10 V
VGS = 0
f = 1 MHz
Gate to source charge
Gate to drain charge
Qgs
Qgd
—
—
6.0
5.4
—
—
nC
nC
Turn-on delay time
Rise time
td (on)
tr
—
—
22
310
—
—
ns
ns
Turn-off delay time
Fall time
td (off)
tf
—
—
50
16
—
—
ns
ns
Body to drain diode forward voltage
Body to drain diode reverse recovery
time
VDF
trr
—
—
0.93
40
—
—
V
ns
Drain to source breakdown voltage
Gate to source breakdown voltage
Forward transfer admittance
Note:
3. Pulse test
Rev.5.00 Apr 07, 2006 page 2 of 7
Test Conditions
Note 3
Note 3
VDD = 10 V
VGS = 10 V
ID = 45 A
VGS = 10 V, ID = 22.5 A
RL = 0.44 Ω
Rg = 4.7 Ω
IF = 45 A, VGS = 0
IF = 45 A, VGS = 0
diF/dt = 50 A/µs
H7N0311LD, H7N0311LS, H7N0311LM
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
(A)
500
ID
60
Drain Current
Channel Dissipation
Pch (W)
80
40
20
10 µs
1m
100
DC
10
0
50
100
ati
Operation in
this area is
limited by RDS (on)
1
ms
0.1
0.01
0.1
200
150
Case Temperature
Tc (°C)
1
3
10
30
100
VDS (V)
Typical Transfer Characteristics
50
10 V
4V
6V
Pulse Test
40
3.5 V
40
30
Drain Current
30
VDS = 10 V
Pulse Test
ID (A)
50
0.3
Drain to Source Voltage
Typical Output Characteristics
ID (A)
PW
on = 10
er
µs
Tc = 25°C
1 shot Pulse
0
Drain Current
Op
s 100
20
VGS = 3 V
10
20
Tc = 75°C
10
25°C
–25°C
0
0
0
2
4
6
Drain to Source Voltage
8
10
0
VDS (V)
0.8
0.6
0.4
ID = 50 A
0.2
20 A
10 A
0
0
4
8
12
Gate to Source Voltage
Rev.5.00 Apr 07, 2006 page 3 of 7
16
20
VGS (V)
3
4
5
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source On State Resistance
RDS(on) (mΩ)
Drain to Source Saturation Voltage
VDS(on) (V)
Pulse Test
2
Gate to Source Voltage
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
1.0
1
100
Pulse Test
50
20
VGS = 5 V
10
10 V
5
2
1
0.1 0.2 0.5 1
2
5 10 20
Drain Current
ID (A)
50 100
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS(on) (mΩ)
H7N0311LD, H7N0311LS, H7N0311LM
40
Pulse Test
32
24
ID = 20 A
ID = 5 A, 10 A
16
VGS = 5 V
8
5 A, 10 A, 20 A
10 V
0
–40
0
40
80
Case Temperature
120
Tc
160
100
Tc = –25°C
30
75°C
10
25°C
3
1
0.3
VDS = 10 V
Pulse Test
0.1
0.1
500
3000
Capacitance C (pF)
Reverse Recovery Time trr (ns)
10000
200
100
50
Coss
300
1
3
10
30
100
20
8
10
4
VDD = 25 V
10 V
5V
0
8
16
Gate Charge
Rev.5.00 Apr 07, 2006 page 4 of 7
24
0
32
Qg (nc)
30
40
50
40
500
Switching Time t (ns)
12
VGS (V)
16
VDS
20
Switching Characteristics
VGS
VDD = 25 V
10 V
5V
10
Drain to Source Voltage VDS (V)
Gate to Source Voltage
(V)
VDS
Drain to Source Voltage
VGS = 0
f = 1 MHz
0
IDR (A)
20
0
Crss
100
10
0.3
ID = 45 A
30
100
1000
Dynamic Input Characteristics
40
30
Ciss
30
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
Reverse Drain Current
50
10
Typical Capacitance vs.
Drain to Source Voltage
1000
10
0.1
3
Drain Current ID (A)
(°C)
Body to Drain Diode Reverse
Recovery Time
20
1
0.3
tr
200
100
td(off)
50
td(on)
20
tf
10
5
0.1 0.2 0.5 1
VGS = 10 V, VDS = 10 V
Rg = 4.7 Ω, duty ≤ 1 %
2
5 10 20
Drain Current
ID (A)
50 100
H7N0311LD, H7N0311LS, H7N0311LM
Reverse Drain Current vs.
Souece to Drain Voltage
Reverse Drain Current IDR (A)
50
40
10 V
VGS = 0
30
5V
20
10
Pulse Test
0
0
0.4
0.8
1.2
2.0
1.6
Source to Drain Voltage
VSD (V)
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θch – c (t) = γ s (t) • θch – c
θch – c = 2.08°C/W, Tc = 25°C
0.1
0.05
0.02
0.03
PDM
1
e
0.0 puls
t
ho
1s
D=
PW
T
PW
T
0.01
10 µ
100 µ
1m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Switching Time Waveform
90%
Vout
Monitor
Vin Monitor
D.U.T.
Rg
Vin
Vout
Vin
10 V
VDS
= 10 V
10%
10%
90%
td(on)
Rev.5.00 Apr 07, 2006 page 5 of 7
10%
RL
tr
90%
td(off)
tf
H7N0311LD, H7N0311LS, H7N0311LM
Package Dimensions
RENESAS Code
PRSS0004AE-A
MASS[Typ.]
1.40g
4.44 ± 0.2
1.3 ± 0.15
1.3 ± 0.2
1.37 ± 0.2
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
JEITA Package Code
SC-83
RENESAS Code
PRSS0004AE-B
2.49 ± 0.2
11.0 ± 0.5
0.2
0.86 +– 0.1
Package Name
LDPAK(S)-(1)
Unit: mm
10.2 ± 0.3
8.6 ± 0.3
11.3 ± 0.5
0.3
10.0 +– 0.5
Previous Code
LDPAK(L) / LDPAK(L)V
Previous Code
LDPAK(S)-(1) / LDPAK(S)-(1)V
0.4 ± 0.1
MASS[Typ.]
1.30g
(1.5)
10.0
Rev.5.00 Apr 07, 2006 page 6 of 7
2.54 ± 0.5
0.4 ± 0.1
0.3
3.0 +– 0.5
2.54 ± 0.5
0.2
0.86 +– 0.1
7.8
7.0
2.49 ± 0.2
0.2
0.1 +– 0.1
1.37 ± 0.2
1.3 ± 0.2
7.8
6.6
1.3 ± 0.15
+ 0.3
– 0.5
8.6 ± 0.3
(1.5)
(1.4)
4.44 ± 0.2
10.2 ± 0.3
Unit: mm
1.7
JEITA Package Code

(1.4)
Package Name
LDPAK(L)
2.2
H7N0311LD, H7N0311LS, H7N0311LM
JEITA Package Code

RENESAS Code
PRSS0004AE-C
Previous Code
LDPAK(S)-(2) / LDPAK(S)-(2)V
MASS[Typ.]
1.35g
7.8
6.6
(2.3)
10.0
2.49 ± 0.2
7.8
7.0
1.3 ± 0.15
+ 0.3
– 0.5
8.6 ± 0.3
(1.5)
(1.4)
4.44 ± 0.2
10.2 ± 0.3
Unit: mm
1.7
Package Name
LDPAK(S)-(2)
0.2
0.1 +– 0.1
2.2
1.37 ± 0.2
2.54 ± 0.5
0.2
0.86 +– 0.1
2.54 ± 0.5
0.4 ± 0.1
0.3
5.0 +– 0.5
1.3 ± 0.2
Ordering Information
Part Name
H7N0311LD-E
H7N0311LSTL-E
Quantity
500 pcs
1000 pcs
Shipping Container
Box (Conductive Sack)
Taping
H7N0311LMTL-E
1000 pcs
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.5.00 Apr 07, 2006 page 7 of 7
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product
information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor
home page (http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes
no responsibility for any damage, liability or other loss resulting from the information contained herein.
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater
use.
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and
cannot be imported into a country other than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
http://www.renesas.com
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501
Renesas Technology Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900
Renesas Technology (Shanghai) Co., Ltd.
Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120
Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898
Renesas Technology Hong Kong Ltd.
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2730-6071
Renesas Technology Taiwan Co., Ltd.
10th Floor, No.99, Fushing North Road, Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology Singapore Pte. Ltd.
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
Renesas Technology Korea Co., Ltd.
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea
Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145
Renesas Technology Malaysia Sdn. Bhd
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: <603> 7955-9390, Fax: <603> 7955-9510
© 2006. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .6.0
Similar pages