HUASHAN H8050S Npn silicon transistor Datasheet

NPN S I L I C O N T RA N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
H8050S
█ APPLICATIONS
Audio Frequency Amplifier.
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
T stg ——Storage Temperature………………………… -55~150℃
TO-92
Tj——Juncttion Temperature…………………………………150℃
P C ——Collector Dissipation…………………………………625W
VCBO——Collector-Base Voltage………………………………40V
1―Emitter,E
2―Base,B
3―Collector,C
VCEO——Collector-Emitter Voltage……………………………20V
V EB O ——Emitter-Base Voltage………………………………5V
IC——Collector Current………………………………………500mA
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol
Characteristics
Min
Typ
Max
Unit
Test Conditions
ICBO
Collector Cut-off Current
0.1
μA
VCB=25V, IE=0
IEBO
Emitter Cut-off Current
0.1
μA
VEB=3V, IC=0
HFE(1) DC Current Gain
85
HFE(2)
40
500
VCE=1V, IC=50mA
VCE=1V, IC=500mA
VCE(sat) Collector- Emitter Saturation Voltage
0.6
V
IC=500mA, IB=50mA
VBE(sat)
VBE(on)
Base- Emitter Saturation Voltage
Base-Emitter On Voltage
0.6
1.2
0.73
V
V
IC=500mA,IB=50mA
VCE=1V, IC=10mA
BVCBO
Collector-Base Breakdown Voltage
40
V
IC=100μA,IE=0
BVCEO
Collector-Emitter Breakdown Voltage
20
V
IC=2mA,IB=0
BVEBO
Emitter- Base Breakdown Voltage
5
V
IE=100μA,IC=0
█ hFE Classification
B
85—160
C
D
E
120—200
160—300
270—500
NPN S I L I C O N T RA N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
H8050S
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