Renesas HAT2134H Silicon n channel power mos fet power switching Datasheet

HAT2134H
Silicon N Channel Power MOS FET
Power Switching
REJ03G1190-0300
(Previous: ADE-208-1578A)
Rev.3.00
Sep 07, 2005
Features
•
•
•
•
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS (on) = 2.3 mΩ typ. (at VGS = 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
D
5
4
G
12
1, 2, 3
4
5
34
S S S
1 2 3
Rev.3.00 Sep 07, 2005 page 1 of 3
Source
Gate
Drain
HAT2134H
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Symbol
VDSS
Value
20
Unit
V
VGSS
ID
±20
60
V
A
240
60
A
A
20
40
A
mJ
30
150
W
°C
–55 to +150
°C
ID (pulse)
IDR
Note 1
Note 3
Avalanche current
Avalanche energy
IAP
Note 3
EAR
Channel dissipation
Channel temperature
Pch
Tch
Note 2
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Tc = 25 °C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Tstg
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
V (BR) DSS
V (BR) GSS
20
±20
—
—
—
—
V
V
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
IGSS
IDSS
—
—
—
—
±10
1
µA
µA
VGS = ±16 V, VDS = 0
VDS = 20 V, VGS = 0
Gate to source cutoff voltage
Static drain to source on state resistance
VGS (off)
RDS (on)
1.0
—
—
2.3
2.5
2.9
V
mΩ
VDS = 10 V, ID = 1 mA
Note 4
ID = 30 A, VGS = 10 V
Forward transfer admittance
RDS (on)
|yfs|
—
51
4.0
85
5.8
—
mΩ
S
ID = 30 A, VGS = 4.5 V
Note 4
ID = 30 A, VDS = 10 V
Input capacitance
Output capacitance
Ciss
Coss
—
—
4500
1200
—
—
pF
pF
Reverse transfer capacitance
Total gate charge
Crss
Qg
—
—
560
70
—
—
pF
nC
VDS = 10 V
VGS = 0
f = 1 MHz
Gate to source charge
Gate to drain charge
Qgs
Qgd
—
—
15
11
—
—
nC
nC
Turn-on delay time
Rise time
td (on)
tr
—
—
20
60
—
—
ns
ns
Turn-off delay time
Fall time
td (off)
tf
—
—
85
17
—
—
ns
ns
Body-drain diode forward voltage
Body-drain diode reverse recovery time
VDF
trr
—
—
0.85
50
1.10
—
V
ns
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Note:
4. Pulse test
Rev.3.00 Sep 07, 2005 page 2 of 3
Test Conditions
Note 4
VDD = 10 V
VGS = 10 V
ID = 60 A
VGS = 10 V, ID = 30 A
VDD ≅ 10 V
RL = 0.33 Ω
Rg = 4.7 Ω
IF = 60 A, VGS = 0
IF = 60 A, VGS = 0
diF/dt = 50 A/µs
Note 4
HAT2134H
Package Dimensions
JEITA Package Code
RENESAS Code
SC-100
PTZZ0005DA-A
Package Name
MASS[Typ.]
LFPAK
Unit: mm
0.080g
4.9
5.3 Max
4.0 ± 0.2
+0.05
4.2
6.1 –0.3
+0.1
3.95
5
4
0° – 8°
+0.25
+0.05
0.20 –0.03
0.6 –0.20
1.3 Max
1
1.1 Max
+0.03
0.07 –0.04
3.3
1.0
0.25 –0.03
0.75 Max
0.10
1.27
0.40 ± 0.06
0.25 M
(Ni/Pd/Au plating)
Ordering Information
Part Name
Quantity
Shipping Container
HAT2134H-EL-E
2500 pcs
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.3.00 Sep 07, 2005 page 3 of 3
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .3.0
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