Renesas HAT2141H-EL-E Silicon n channel power mos fet power switching Datasheet

HAT2141H
Silicon N Channel Power MOS FET
Power Switching
REJ03G1193-0700
(Previous: ADE-208-1582E)
Rev.7.00
Sep 07, 2005
Features
•
•
•
•
Capable of 7 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS (on) = 22 mΩ typ. (at VGS = 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
D
5
4
G
12
1, 2, 3
4
5
34
S S S
1 2 3
Rev.7.00 Sep 07, 2005 page 1 of 7
Source
Gate
Drain
HAT2141H
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Symbol
VDSS
Value
100
Unit
V
VGSS
ID
±20
15
V
A
60
15
A
A
ID (pulse)
IDR
Note 1
Note 3
Avalanche current
Avalanche energy
IAP
Note 3
EAR
15
22.5
A
mJ
Channel dissipation
Channel temperature
Pch
Tch
Note 2
20
150
W
°C
–55 to +150
°C
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Tc = 25 °C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Tstg
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
V (BR) DSS
V (BR) GSS
100
±20
—
—
—
—
V
V
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
IGSS
IDSS
—
—
—
—
±10
1
µA
µA
VGS = ±16 V, VDS = 0
VDS = 100 V, VGS = 0
Gate to source cutoff voltage
Static drain to source on state resistance
VGS (off)
RDS (on)
2.0
—
—
22
3.5
27.5
V
mΩ
VDS = 10 V, ID = 1 mA
Note 4
ID = 7.5 A, VGS = 10 V
Forward transfer admittance
RDS (on)
|yfs|
—
15
23.5
25
32
—
mΩ
S
ID = 7.5 A, VGS = 7 V
Note 4
ID = 7.5 A, VDS = 10 V
Input capacitance
Output capacitance
Ciss
Coss
—
—
3200
255
—
—
pF
pF
Reverse transfer capacitance
Total gate charge
Crss
Qg
—
—
125
46
—
—
pF
nC
VDS = 10 V
VGS = 0
f = 1 MHz
Gate to source charge
Gate to drain charge
Qgs
Qgd
—
—
11
10
—
—
nC
nC
Turn-on delay time
Rise time
td (on)
tr
—
—
22
13
—
—
ns
ns
Turn-off delay time
Fall time
td (off)
tf
—
—
70
10
—
—
ns
ns
Body-drain diode forward voltage
Body-drain diode reverse recovery time
VDF
trr
—
—
0.82
50
1.07
—
V
ns
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Note:
4. Pulse test
Rev.7.00 Sep 07, 2005 page 2 of 7
Test Conditions
Note 4
VDD = 50 V
VGS = 10 V
ID = 15 A
VGS = 10 V, ID = 7.5 A
VDD ≅ 30 V
RL = 4 Ω
Rg = 4.7 Ω
IF = 15 A, VGS = 0
IF = 15 A, VGS = 0
diF/dt = 100 A/µs
Note 4
HAT2141H
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
500
ID (A)
30
Drain Current
Channel Dissipation
Pch (W)
40
20
10
50
100
150
Case Temperature
10
PW
200
4.0 V
16
12
8
3.7 V
4
VGS = 3.5 V
Drain Current
Drain Current
VDS (V)
VDS = 10 V
Pulse Test
8
25°C
Tc = 75°C
4
–25°C
0
0
0
2
4
6
Drain to Source Voltage
10
8
VDS (V)
Pulse Test
600
400
ID = 10 A
200
5A
2A
0
0
4
8
12
Gate to Source Voltage
Rev.7.00 Sep 07, 2005 page 3 of 7
16
20
VGS (V)
2
4
6
8
10
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
RDS (on) (mΩ)
800
0
Gate to Source Voltage
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
VDS (on) (mV)
30 100 300 1000
20
12
Drain to Source Voltage
10
Typical Transfer Characteristics
ID (A)
ID (A)
4.5 V
16
3
Drain to Source Voltage
Pulse Test
10 V
µs
0
this area is
limited by RDS (on)
0.1
Typical Output Characteristics
20
10
µs
m
=1
s
Op 0 m
s
er
(1
ati
sh
on
ot
(T
c= )
25
Operation in
°C
)
1
Tc (°C)
1
DC
10
Ta = 25°C
0.01
0.1 0.3 1
0
0
100
1000
500
Pulse Test
200
100
50
VGS = 7 V
20
10 V
10
5
2
1
0.1
0.2
0.5
1
Drain Current
2
ID (A)
5
10
Forward Transfer Admittance vs.
Drain Current
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS (on) (mΩ)
HAT2141H
100
Pulse Test
80
60
ID = 2 A, 5 A, 10 A
40
VGS = 7 V
2 A, 5 A, 10 A
20
10 V
0
–25
0
25
50
75
100 125 150
Case Temperature
Tc
100
30
Tc = –25°C
10
75°C
3
25°C
1
0.3
VDS = 10 V
Pulse Test
0.1
0.1
10
30
100
10000
Capacitance C (pF)
Reverse Recovery Time trr (ns)
3
Typical Capacitance vs.
Drain to Source Voltage
100
50
20
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
10
0.1
0.3
1
3
10
Reverse Drain Current
30
Ciss
3000
1000
300
Coss
100
Crss
30
10
100
VGS = 0
f = 1 MHz
0
10
16
VDD = 100 V
50 V
25 V
120
VGS
VDS
12
8
80
VDD = 100 V
50 V
25 V
40
4
0
0
20
40
Gate Charge
Rev.7.00 Sep 07, 2005 page 4 of 7
60
80
Qg (nc)
40
50
0
100
1000
500
Switching Time t (ns)
160
VGS (V)
20
ID = 15 A
30
Switching Characteristics
Gate to Source Voltage
200
20
Drain to Source Voltage VDS (V)
IDR (A)
Dynamic Input Characteristics
VDS (V)
1
Drain Current ID (A)
(°C)
Body-Drain Diode Reverse
Recovery Time
Drain to Source Voltage
0.3
200
td(off)
100
50
td(on)
20
tr
10
tf
5
2
VGS = 10 V, VDS = 10 V
Rg = 4.7 µs, duty ≤ 1 %
1
0.1
0.3
1
3
Drain Current
10
30
ID (A)
100
HAT2141H
Reverse Drain Current vs.
Source to Drain Voltage
Repetitive Avalanche Energy EAR (mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Reverse Drain Current IF (A)
20
16
VGS = 0
10 V
12
5V
8
4
Pulse Test
0
0
0.4
0.8
1.2
1.6
Source to Drain Voltage
2.0
50
IAP = 15 A
VDD = 50 V
duty < 0.1 %
Rg ≥ 50 Ω
40
30
20
10
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
VSDF (V)
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θch – c (t) = γ s (t) • θch – c
θch – c = 6.25°C/W, Tc = 25°C
0.1
0.05
D=
PDM
0.02
1
0.0
0.03
1s
t
ho
0.01
10 µ
pu
lse
PW
T
PW
T
100 µ
10 m
1m
100 m
1
10
Pulse Width PW (S)
Avalanche Test Circuit
VDS
Monitor
Avalanche Waveform
L
EAR =
1
• L • IAP2 •
2
VDSS
VDSS – VDD
IAP
Monitor
Rg
V(BR)DSS
IAP
D.U.T
VDD
VDS
ID
Vin
15 V
50 Ω
0
Rev.7.00 Sep 07, 2005 page 5 of 7
VDD
HAT2141H
Switching Time Test Circuit
Switching Time Waveform
90%
Vout
Monitor
Vin Monitor
D.U.T.
Rg
Vin
Vout
Vin
10 V
VDS
= 30 V
10%
10%
90%
td(on)
Rev.7.00 Sep 07, 2005 page 6 of 7
10%
RL
tr
90%
td(off)
tf
HAT2141H
Package Dimensions
JEITA Package Code
RENESAS Code
SC-100
PTZZ0005DA-A
Package Name
MASS[Typ.]
LFPAK
Unit: mm
0.080g
4.9
5.3 Max
4.0 ± 0.2
+0.05
4.2
6.1 –0.3
+0.1
3.95
5
4
0° – 8°
+0.25
+0.05
0.20 –0.03
0.6 –0.20
1.3 Max
1
1.1 Max
+0.03
0.07 –0.04
3.3
1.0
0.25 –0.03
0.75 Max
0.10
1.27
0.40 ± 0.06
0.25 M
(Ni/Pd/Au plating)
Ordering Information
Part Name
Quantity
Shipping Container
HAT2141H-EL-E
2500 pcs
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.7.00 Sep 07, 2005 page 7 of 7
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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