HAT2167N Silicon N Channel Power MOS FET Power Switching REJ03G1681-0200 Rev.2.00 May 27, 2008 Features • • • • • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.5 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTSP0008DC-A (Package name: LFPAK-i) 5 6 7 8 DDDD 2X XX 1(S) 2(S) 3(S) 4(G) 8(D) 7(D) 6(D) 5(D) 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain 4 G S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit VDSS VGSS 30 ±20 V V ID Note1 ID(pulse) 40 160 A A Body-drain diode reverse drain current Avalanche current IDR IAP Note 2 40 20 A A Avalanche energy Channel dissipation Channel to case thermal resistance EAR Note 2 Pch Note3 θch-C 40 20 6.25 mJ W °C/W Channel temperature Tch 150 Storage temperature Tstg –55 to +150 °C °C Drain to source voltage Gate to source voltage Drain current Drain peak current Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C REJ03G1681-0200 Rev.2.00 May 27, 2008 Page 1 of 6 HAT2167N Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Notes: 4. Pulse test REJ03G1681-0200 Rev.2.00 May 27, 2008 Page 2 of 6 Min 30 ±20 — — 1.0 — — 42 — — — — — — — — — Typ — — — — — 4.5 6.4 70 2700 620 200 0.5 17 8 3.7 11 30 Max — — ±10 1 2.5 5.8 9.6 — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF Ω nc nc nc ns ns — — — — 45 6 0.85 30 — — 1.10 — ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 20 A, VGS = 10 V Note4 ID = 20 A, VGS = 4.5 V Note4 ID = 20 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 4.5 V ID = 40 A VGS = 10 V, ID = 20 A VDD ≅ 10 V RL = 0.5 Ω Rg = 4.7 Ω IF = 40 A, VGS = 0 Note4 IF = 40 A, VGS = 0 diF/ dt = 100 A/ µs HAT2167N Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 500 Drain Current ID (A) 30 20 10 DC 10 1m s = Op 10 era ms tio n PW Tc 50 0µ s =2 5° C 1 Operation in this area is 0.1 limited by RDS(on) 40 50 100 150 0.01 0.1 200 0.3 1 3 30 100 Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 10 V Pulse Test 3.0 V VDS = 10 V Pulse Test 2.8 V 4.5 V 30 2.6 V 20 2.4 V 10 0 10 Case Temperature Tc (°C) Tc = 75°C 25°C VGS = 2.2 V 2 4 6 -25°C 8 0 10 1 2 3 5 4 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 500 Pulse Test 400 300 ID = 50 A 200 20 A 100 10 A 0 4 8 12 16 20 Gate to Source Voltage VGS (V) REJ03G1681-0200 Rev.2.00 May 27, 2008 Page 3 of 6 Drain to Source On State Resistance RDS(on) (mΩ) Drain to Source Voltage VDS(on) (mV) 10 Ta = 25°C 1 shot Pulse 0 Drain Current ID (A) 10 µs 100 Drain Current ID (A) Channel Dissipation Pch (W) 40 10 VGS = 4.5 V 5 10 V 2 Pulse Test 1 1 0.3 10 3 100 30 Drain Current ID (A) 1000 Static Drain to Source on State Resistance vs. Temperature 10 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) (mΩ) HAT2167N ID = 50 A Pulse Test 8 10 A, 20A VGS = 4.5 V 6 10 A, 20 A, 50 A 4 10 V 2 0 -25 0 25 50 75 Case Temperature 100 125 150 Tc 100 Tc = -25°C 30 25°C 10 3 1 0.3 0.1 0.1 10 30 100 Capacitance C (pF) 0.3 1 3 10 30 1000 Coss 300 Crss 100 VGS = 0 f = 1 MHz 10 100 0 5 10 15 20 25 30 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 20 ID= 30 A VGS VDD = 25 V 10 V 5V 16 12 VDS 20 8 10 4 VDD = 25 V 10 V 5V 20 40 60 80 Gate Charge Qg (nc) REJ03G1681-0200 Rev.2.00 May 27, 2008 Page 4 of 6 0 100 1000 Switching Time t (ns) 10 0.1 Ciss 3000 30 di/dt = 100 A/µs VGS = 0, Ta = 25°C Gate to Source Voltage VGS (V) Reverse Recovery Time trr (ns) Drain to Source Voltage VDS (V) 3 10000 20 0 1 Typical Capacitance vs. Drain to Source Voltage 50 30 0.3 Drain Current ID (A) 100 40 VDS = 10 V Pulse Test (°C) Body-Drain Diode Reverse Recovery Time 50 75°C 300 100 tr td(off) 30 td(on) 10 tf 3 1 0.1 VGS = 10 V, VDS = 10 V Rg = 4.7 Ω, duty ≤ 1 % 0.3 1 3 10 30 Drain Current ID (A) 100 HAT2167N Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 50 10 V 40 5V VGS = 0 30 20 10 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 Repetitive Avalanche Energy EAR (mJ) Maximum Avalanche Energy vs. Channel Temperature Derating 50 IAP = 20 A VDD = 15 V duty < 0.1 % Rg ≥ 50 Ω 40 30 20 10 0 25 50 75 100 125 150 Source to Drain Voltage VSD (V) Channel Temperature Tch (°C) Avalanche Test Circuit Avalanche Waveform L VDS Monitor EAR = 1 L • IAP2 • 2 VDSS VDSS - VDD IAP Monitor Rg D. U. T V(BR)DSS VDD IAP VDS Vin 15 V 50 Ω ID 0 VDD Switching Time Test Circuit Vout Monitor Vin Monitor Rg Switching Time Waveform 90% D.U.T. RL Vin Vout Vin 10 V VDS = 10 V 10% 90% td(on) REJ03G1681-0200 Rev.2.00 May 27, 2008 Page 5 of 6 10% tr 10% 90% td(off) tf HAT2167N Package Dimensions Package Name LFPAK-i JEITA Package Code RENESAS Code PTSP0008DC-A Previous Code LFPAK-iV MASS[Typ.] 0.080g + 0.05 4.9 0.25 – 0.03 5.3Max 5 + 0.25 4 0.60 – 0.30 1 + 0.05 3.3 0.20 – 0.03 1.3Max 6.1 – 0.3 + 0.1 3.2 3.95 8 + 0.03 0.07 – 0.04 1.1Max 0° – 8° 0.75Max 1.27 0.10 0.4 ± 0.06 0.25 M ( Ni/Pd/Au plating ) Ordering Information Part No. HAT2167N-EL-E Quantity 2500 pcs REJ03G1681-0200 Rev.2.00 May 27, 2008 Page 6 of 6 Shipping Container Taping Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. 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