Renesas HAT2171H Silicon n channel power mos fet power switching Datasheet

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HAT2171H
Silicon N Channel Power MOS FET
Power Switching
REJ03G0131-0400
Rev.4.00
Sep 20, 2005
Features
•
•
•
•
•
High speed switching
Capable of 7 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 3.8 mΩ typ. (at VGS = 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A)
(Package name: LFPAK )
5
D
5
3
12
4
G
4
1, 2, 3 Source
4
Gate
5
Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω
3. Tc = 25°C
Rev.4.00 Sep 20, 2005 page 1 of 7
Symbol
VDSS
VGSS
ID
Note1
ID(pulse)
IDR
IAP Note 2
EAR Note 2
Pch Note3
θch-C
Tch
Tstg
Ratings
40
±20
40
160
40
25
50
25
5.0
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
HAT2171H
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Rev.4.00 Sep 20, 2005 page 2 of 7
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Min
40
±20
—
—
1.5
—
—
30
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
3.8
4.4
50
3750
760
230
0.5
52
15
6
14
30
Max
—
—
± 10
1
3.0
4.8
6.0
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
Ω
nC
nC
nC
ns
ns
—
—
—
—
41
5.5
0.82
38
—
—
1.07
—
ns
ns
V
ns
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 40 V, VGS = 0
VDS = 10 V, I D = 1 mA
ID = 20 A, VGS = 10 V Note4
ID = 20 A, VGS = 7 V Note4
ID = 20 A, VDS = 10 V Note4
VDS = 10 V, VGS = 0,
f = 1 MHz
VDD = 10 V, VGS = 10 V,
ID = 40 A
VGS = 10 V, ID = 20 A,
VDD ≅ 10 V, RL = 0.5 Ω,
Rg = 4.7 Ω
IF = 40 A, VGS = 0 Note4
IF = 40 A, VGS = 0
diF/ dt = 100 A/ µs
HAT2171H
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
ID (A)
500
30
Drain Current
Channel Dissipation
Pch (W)
40
20
10
100
DC
era
10
50
100
150
Case Temperature
s
0m
tio
s
nT
c=
25
1 Operation in
this area is
limited by RDS(on)
0.1
0.01
0.1
200
°C
1
3
10
30
100
VDS (V)
Typical Transfer Characteristics
50
10 V
4V
3.8 V
VDS = 10 V
Pulse Test
Pulse Test
40
3.6 V
ID (A)
50
0.3
Drain to Source Voltage
Tc (°C)
Typical Output Characteristics
ID (A)
1m
=1
Ta = 25°C
1 shot Pulse
0
30
40
30
3.4 V
20
3.2 V
10
Drain Current
Drain Current
PW
Op
10
µs
0µ
s
10
20
Tc = 75°C
10
25°C
VGS = 3 V
–25°C
0
2
4
6
Drain to Source Voltage
8
0
10
200
150
100
ID = 20 A
50
10 A
5A
0
4
8
12
Gate to Source Voltage
Rev.4.00 Sep 20, 2005 page 3 of 7
16
20
VGS (V)
6
8
10
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source On State Resistance
RDS(on) (mΩ)
Drain to Source Voltage VDS(on) (mV)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Pulse Test
4
Gate to Source Voltage
VDS (V)
250
2
100
Pulse Test
30
10
VGS = 7 V
3
10 V
1
0.3
0.1
1
3
10
30
Drain Current
100 300 1000
ID (A)
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS(on) (mΩ)
HAT2171H
10
Pulse Test
20 A
8
ID = 5 A, 10 A
6
VGS = 7 V
5 A, 10 A, 20 A
4
10 V
2
–25
0
25
50
75
100 125 150
Case Temperature
Tc
1000
300
100
Tc = –25°C
30
10
75°C
3
25°C
1
VDS = 10 V
Pulse Test
0.3
0.1
0.1
0.3
(°C)
10000
Ciss
Capacitance C (pF)
Reverse Recovery Time trr (ns)
100
Typical Capacitance vs.
Drain to Source Voltage
100
50
20
10
0.1
0.3
1
3
10
30
3000
1000
Coss
300
Crss
100
30
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
Reverse Drain Current
VGS = 0
f = 1 MHz
10
100
0
IDR (A)
5
VGS
12
VDS
20
8
10
0
16
4
VDD = 25 V
10 V
5V
20
40
Gate Charge
Rev.4.00 Sep 20, 2005 page 4 of 7
60
80
Qg (nc)
0
100
VGS (V)
VDD = 25 V
10 V
5V
20
25
30
1000
Switching Time t (ns)
30
20
ID = 40 A
40
15
Switching Characteristics
Gate to Source Voltage
50
10
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
VDS (V)
30
10
Drain Current ID (A)
Body-Drain Diode Reverse
Recovery Time
Drain to Source Voltage
3
1
300
100
td(off)
30
td(on)
10
3
tf
tr
VGS = 10 V, VDS = 10 V
Rg = 4.7 Ω, duty ≤ 1 %
0.1 0.2 0.5 1
2
5 10 20
Drain Current
ID (A)
50 100
HAT2171H
(mJ)
Reverse Drain Current vs.
Source to Drain Voltage
Repetitive Avalanche Energy EAR
Reverse Drain Current IDR (A)
50
40
10 V
VGS = 0
5V
30
20
10
Pulse Test
0
0.4
0.8
1.2
1.6
Source to Drain Voltage
2.0
Maximum Avalanche Energy vs.
Channel Temperature Derating
100
IAP = 25 A
VDD = 15 V
duty < 0.1 %
Rg ≥ 50 Ω
80
60
40
20
0
25
VSD (V)
50
75
100
125
150
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
D=1
1
0.5
0.3
0.2
0.1
θch - c(t) = γs (t) • θch - c
θch - c = 5.0°C/ W, Tc = 25°C
0.1
0.05
0.02
PDM
0.03
e
1
0.0
0.01
10 µ
D=
uls
PW
T
tp
o
sh
PW
T
1
100 µ
1m
10 m
100 m
1
10
Pulse Width PW (s)
Avalanche Test Circuit
VDS
Monitor
Avalanche Waveform
EAR =
L
1
2
L • IAP2 •
VDSS
VDSS – VDD
IAP
Monitor
V(BR)DSS
IAP
Rg
D. U. T
VDS
VDD
ID
Vin
15 V
50 Ω
0
Rev.4.00 Sep 20, 2005 page 5 of 7
VDD
HAT2171H
Switching Time Test Circuit
Switching Time Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
Rg
RL
Vin
Vout
Vin
10 V
10%
10%
VDS
= 10 V
90%
td(on)
Rev.4.00 Sep 20, 2005 page 6 of 7
10%
tr
90%
td(off)
tf
HAT2171H
Package Dimensions
JEITA Package Code
RENESAS Code
SC-100
PTZZ0005DA-A
Package Name
MASS[Typ.]
LFPAK
Unit: mm
0.080g
4.9
5.3 Max
4.0 ± 0.2
+0.05
4.2
6.1 –0.3
+0.1
3.95
5
4
0° – 8°
+0.25
+0.05
0.20 –0.03
0.6 –0.20
1.3 Max
1
1.1 Max
+0.03
0.07 –0.04
3.3
1.0
0.25 –0.03
0.75 Max
0.10
1.27
0.40 ± 0.06
0.25 M
(Ni/Pd/Au plating)
Ordering Information
Part Name
HAT2171H-EL-E
Quantity
2500 pcs
Shipping Container
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.4.00 Sep 20, 2005 page 7 of 7
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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