Renesas HAT2191WP-EL-E Silicon n channel power mos fet power switching Datasheet

HAT2191WP
Silicon N Channel Power MOS FET
Power Switching
REJ03G1223-0500
Rev.5.00
Jun.02.2005
Features
• Low on-resistance
• Low drive current
• High density mounting
Outline
RENESAS Package code: PWSN0008DA-A
(Package name: WPAK)
5 6 7 8
D D D D
5 6 7 8
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
4
G
4 3 2 1
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
Rev.5.00, Jun.02.2005, page 1 of 3
Symbol
VDSS
VGSS
ID
ID (pulse)Note1
IDR
Ratings
250
±30
14
28
14
Unit
V
V
A
A
A
IDR (pulse)Note1
IAPNote3
EARNote3
Pch Note2
θch-c
Tch
Tstg
28
7
3.0
30
4.17
150
–55 to +150
A
A
mJ
W
°C/W
°C
°C
HAT2191WP
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Notes: 4. Pulse test
Rev.1.00, Feb.23.2005, page 2 of 3
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|yfs|
RDS(on)
Min
250
—
—
3.0
7
—
Typ
—
—
—
—
12
0.120
Max
—
1
±0.1
4.5
—
0.138
Unit
V
µA
µA
V
S
Ω
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
—
—
—
—
—
—
—
—
—
—
1200
185
14
30
45
60
15
27
7
10
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
VDF
trr
—
—
0.86
150
1.40
—
V
ns
Test conditions
ID = 10 mA, VGS = 0
VDS = 250 V, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 7 A, VDS = 10 V Note4
ID = 7 A, VGS = 10 VNote4
VDS = 25 V
VGS = 0
f = 1 MHz
ID = 7 A
VGS = 10 V
RL = 25 Ω
Rg = 17.9 Ω
VDD = 200 V
VGS = 10 V
ID = 14 A
IF = 14 A, VGS = 0 Note4
IF = 14 A, VGS = 0
diF/dt = 100 A/µs
HAT2191WP
Package Dimensions

RENESAS Code
Package Name
MASS[Typ.]
PWSN0008DA-A
WPAK
0.085g
Unit: mm
0.5 ± 0.15
JEITA Package Code
0.8Max
5.1 ± 0.2
4.21Typ
1.27Typ
+0.1
-0.2
5.9
3.8 ± 0.2
+0.1
-0.3
6.1
3.9 ± 0.2
0.05Max
0Min
Stand-off
1.27Typ
0.2Typ
0.5 ± 0.15
0.635Max
0.7Typ
0.04Min
0.4 ± 0.06
4.9 ± 0.1
(Ni/Pd/Au plating)
Ordering Information
Part Name
HAT2191WP-EL-E
Quantity
2500 pcs
Shipping Container
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.1.00, Feb.23.2005, page 3 of 3
Sales Strategic Planning Div.
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