HAT2206C Silicon N Channel MOS FET Power Switching REJ03G1238-0500 Rev.5.00 Jan 26, 2006 Features • Low on-resistance RDS (on) = 65 mΩ typ. (at VGS = 4.5 V) • Low drive current. • High density mounting • 1.8 V gate drive devices. Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 2 3 4 5 DD D D 4 1 2 3 6 G 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate S 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Drain current ID Drain peak current ID (pulse)Note1 Body - Drain diode reverse drain current IDR Channel dissipation PchNote 2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board. (FR4 40 × 40 × 1.6 mm) Rev.5.00 Jan 26, 2006 page 1 of 6 Ratings 12 ±8 2 8 2 830 150 –55 to +150 Unit V V A A A mW °C °C HAT2206C Electrical Characteristics (Ta = 25°C) Item Drain to Source breakdown voltage Gate to Source breakdown voltage Gate to Source leakage current Drain to Source leakage current Gate to Source cutoff voltage Drain to Source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to Source charge Gate to Drain charge Turn - on delay time Rise time |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr Min 12 ±8 — — 0.3 — — — 3.5 — — — — — — — — Turn - off delay time Fall time Body - Drain diode forward voltage Notes: 3. Pulse test td(off) tf VDF — — — Rev.5.00 Jan 26, 2006 page 2 of 6 Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(th) RDS(on) Typ — — — — — 65 81 113 5.5 260 46 22 3.5 0.7 0.7 4 7 Max — — ±10 1 1.2 85 114 170 — — — — — — — — — Unit V V µA µA V mΩ mΩ mΩ S pF pF pF nC nC nC ns ns 43 3 0.8 — — 1.1 ns ns V Test Conditions ID = 10 mA, VGS = 0 IG = ±10 µA, VDS = 0 VGS = ±6.4 V, VDS = 0 VDS = 10 V, VGS = 0 VDS = 10 V, ID = 1mA ID = 1 A, VGS = 4.5 V Note3 ID = 1 A, VGS = 2.5 V Note3 ID = 1 A, VGS = 1.8 V Note3 ID = 1 A, VGS = 10 V Note3 VGS = 0, f = 1 MHz, VDS = 10 V VGS = 4.5 V, VDS = 10 V, ID =2 A VGS = 4.5V, ID = 1 A, VDD = 10 V, RL = 10 Ω, Rg = 4.7 Ω IF =2 A, VGS = 0 Note3 HAT2206C Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 100 Test Condition : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), Ta = 25°C 1.2 3 1 s m n Operation in this area is limited by RDS(on) 0.1 s m io at er 0.3 10 1 0.03 0 50 100 150 Ambient Temperature 0.01 0.03 0.1 0.3 200 3 10 30 100 Typical Transfer Characteristics 10 10 2.5 V 4.5 V 2.2 V 2.0 V 10 V 6 1.8 V 4 1.5 V 2 1.3 V Tc = 75°C VDS = 10 V Pulse Test Pulse Test Drain Current ID (A) 8 1 Drain to Source Voltage VDS (V) Ta (°C) Typical Output Characteristics Drain Current ID (A) 100 µs op 0.4 10 µs 10 = 0.8 Ta = 25°C,1shot pulse When using the FR4 board. PW Drain Current ID (A) 30 DC Channel Dissipation Pch (W) 1.6 25°C 8 –25°C 6 4 2 VGS = 1.0 V 2 4 6 8 0 10 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 400 Pulse Test 300 200 ID = 2.0 A 100 1.0 A 0.5 A 0 2 4 6 8 10 Gate to Source Voltage VGS (V) Rev.5.00 Jan 26, 2006 page 3 of 6 Drain to Source On State Resistance RDS(on) (mΩ) Drain to Source Voltage VDS(on) (mV) 0 1000 Pulse Test 1.8 V 2.5 V 100 VGS = 4.5 V 10 0.1 1 10 Drain Current ID (A) 100 Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) (mΩ) HAT2206C 200 0.5 A 2A 160 1A 2A 120 1.8 V 0.5 A 1A V 2.5 80 ID = 0.5, 1, 2 A 40 VGS = 4.5 V 0 –25 Pulse Test 0 25 50 75 100 125 150 Case Temperature Tc 100 30 Tc = –25°C 10 3 0.3 0.1 0.1 8 4 4 2 VDD = 12 V 10 V 5V 0 4 100 Coss Crss 30 10 1 0 4 2 6 8 10 12 Gate Charge Qg (nc) Drain to Source Voltage VDS (V) Reverse Drain Current vs. Source to Drain Voltage Switching Characteristics 1000 4.5 V Switching Time t (ns) Reverse Drain Current IDR (A) 100 VGS = 0 f = 1 MHz Ciss 300 5 2.5V 6 VGS = 0, –5 V 4 2 Pulse Test 0 30 3 10 8 10 1000 Capacitance C (pF) 6 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) VDD = 12 V 10 V 5V 3 3 1 Typical Capacitance vs. Drain to Source Voltage 8 2 0.3 Drain Current ID (A) ID = 2 A 1 VDS = 10 V Pulse Test (°C) 16 0 75°C 1 Dynamic Input Characteristics 12 25°C 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Rev.5.00 Jan 26, 2006 page 4 of 6 VGS = 4.5 V, VDD = 10 V Rg = 4.7 Ω 100 tr td(off) 10 td(on) tf 1 0.01 0.03 0.1 0.3 1 3 Drain Current ID (A) 10 HAT2206C Switching Time Test Circuit Waveform 90% Vout Monitor Vin Monitor D.U.T. RL 4.7 Ω Vin 4.5 V Vin Vout VDD = 10 V 10% 10% 90% td(on) Rev.5.00 Jan 26, 2006 page 5 of 6 10% tr 90% td(off) tf HAT2206C Package Dimensions JEITA Package Code Package Name CMFPAK-6 RENESAS Code PWSF0006JA-A Previous Code CMFPAK-6 / CMFPAK-6V MASS[Typ.] 0.0065g D A e c E A HE A x M LP L b S A Reference Symbol e A2 A A1 y S S e1 b b1 l1 c1 b2 c Pattern of terminal position areas A-A Section A A1 A2 b b1 c c1 D E e HE L LP x y b2 e1 l1 Dimension in Millimeters Min 0.6 0 0.7 0.15 0.1 1.9 1.6 2.05 0.1 0.15 Nom 0.22 0.2 0.13 0.11 2.0 1.7 0.65 2.1 0.2 Max 0.8 0.01 0.79 0.3 0.15 2.1 1.8 2.15 0.3 0.45 0.05 0.05 0.35 1.65 0.5 Ordering Information Part Name HAT2206C-EL-E Quantity 3000 pcs Shipping Container Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.5.00 Jan 26, 2006 page 6 of 6 Sales Strategic Planning Div. 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