HBAT-5400, 5402, 540B, 540C High Performance Schottky Diode for Transient Suppression Data Sheet Description Features The HBAT-540x series of Schottky diodes, commonly referred to as clipping /clamping diodes, are optimal for circuit and waveshape preservation applications with high speed switching. Low series resistance, R S, makes them ideal for protecting sensitive circuit elements against high current transients carried on data lines. With picosecond switching, the HBAT-540x can respond to noise spikes with rise times as fast as 1 ns. Low capacitance minimizes waveshape loss that causes signal degradation. • Ultra-low Series Resistance for Higher Current Handling Package Lead Code Identification (Top View) SINGLE 3 1 0, B SERIES 3 2 COMMON ANODE 3 1 E 2 1 2, C 2 COMMON CATHODE 3 1 F 2 • Low Capacitance • Low Series Resistance • Lead-free Option Available Applications RF and computer designs that require circuit protection, high-speed switching, and voltage clamping. Absolute Maximum Ratings, TA= 25ºC Symbol Unit DC Forward Current mA 220 430 A 1.0 1.0 IF IF- peak PT Absolute Maximum [1] HBAT-5400/-5402 HBAT-540B/-540C Parameter Peak Surge Current (1µs pulse) mW 250 825 PINV Peak Inverse Voltage Total Power Dissipation V 30 30 TJ Junction Temperature °C 150 150 TSTG Storage Temperature °C -65 to 150 -65 to 150 θ JC Thermal Resistance, junction to lead °C/W 500 150 Note: 1. Operation in excess of any one of these conditions may result in permanent damage to the device. Linear and Non-linear SPICE Model[2] SPICE Parameters 0.08 pF 2 nH Parameter RS SPICE model Unit BV V 40 CJO pF 3.0 EG eV 0.55 IBV A 10E-4 IS A 1.0E-7 N Note: 2. To effectively model the packaged HBAT-540x product, please refer to Application Note AN1124. Value 1.0 RS Ω 2.4 PB V 0.6 PT 2 M 0.5 HBAT-540x DC Electrical Specifications, TA = +25°C[1] Part Package Number Marking Lead HBAT-Code [2] Code Configuration Package VF (mV) -5400 V0 -540B -5402 0 Single B V2 2 Series -540C C Maximum Forward Voltage VBR (V) Minimum Breakdown Typical Voltage Capacitance C T (pF) R S (Ω) Typical Series Resistance t (ps) Maximum Eff. Carrier Lifetime 2.4 100[6] SOT-23 SOT-323 (3-lead SC-70) 800 [3] 30[4] 3.0[5] SOT-23 SOT-323 (3-lead SC-70) Notes: 1. T = +25°C, where T is defined to be the temperature at the package pins where contact is made to the circuit board. 2. Package marking code is laser marked. 3. IF = 100 mA; 100% tested 4. IR = 100 µA; 100% tested 5. VF = 0; f =1 MHz 6. Measured with Karkauer method at 20 mA guaranteed by design. A A Typical Performance 10 1 0.1 0.01 TA = +75C TA = +25C TA = –25C 0 0.1 0.2 0.3 0.4 0.5 100 10 1 0.1 0.01 0.6 TJ – JUNCTION TEMPERATURE (C) 500 100 IF – FORWARD CURRENT (mA) IF – FORWARD CURRENT (mA) 300 TA = +75C TA = +25C TA = –25C 0 VF – FORWARD VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 1.2 160 Max. safe junction temp. 140 120 100 80 60 40 0 1.4 IF – FORWARD CURRENT (mA) Figure 1. Forward Current vs. Forward Voltage at Temperature for HBAT-5400 and HBAT-5402. TA = +75C TA = +25C TA = –25C 20 0 50 100 150 200 Figure 2. Forward Current vs. Forward Voltage at Temperature for HBAT-540B and HBAT-540C. Figure 3. Junction Temperature vs. Current as a Function of Heat Sink Temperature for HBAT-5400 and HBAT-5402. 3.0 CT – TOTAL CAPACITANCE (pF) Tj – JUNCTION TEMPERATURE (C) Note: Data is calculated from SPICE parameters. 160 Max. safe junction temp. 140 120 100 80 60 40 TA = +75C TA = +25C TA = –25C 20 0 0 100 200 300 400 500 2.5 2.0 1.5 1.0 600 IF – FORWARD CURRENT (mA) 0 5 10 15 20 VR – REVERSE VOLTAGE (V) Figure 4. Junction Temperature vs. Current as a Function of Heat Sink Temperature for HBAT-540B and HBAT-540C. Figure 5. Total Capacitance vs. Reverse Voltage. Note: Data is calculated from SPICE parameters. Device Orientation For Outlines SOT-23/323 4 mm CARRIER TAPE USER FEED DIRECTION COVER TAPE END VIEW TOP VIEW REEL 8 mm ABC ABC ABC 250 IF – FORWARD CURRENT (mA) ABC Note: "AB" represents package marking code. "C" represents date code. Recommended PCB Pad Layout for Avago’s Package Dimensions SOT‑23 Products Outline SOT-23 e2 XXX E E1 0.079 2.0 e L B 0.035 0.9 C DIMENSIONS (mm) D SYMBOL A A1 B C D E1 e e1 e2 E L A A1 Notes: XXX-package marking Drawings are not to scale MIN. 0.79 0.000 0.37 0.086 2.73 1.15 0.89 1.78 0.45 2.10 0.45 0.031 0.8 MAX. 1.20 0.100 0.54 0.152 3.13 1.50 1.02 2.04 0.60 2.70 0.69 Dimensions in Tape Dimensions and Product Orientation For Outline SOT-23 P P2 D E P0 F W D1 t1 Ko 9° MAX DESCRIPTION 13.5° MAX 8° MAX B0 A0 SYMBOL SIZE (mm) SIZE (INCHES) CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER A0 B0 K0 P D1 3.15 ± 0.10 2.77 ± 0.10 1.22 ± 0.10 4.00 ± 0.10 1.00 + 0.05 0.124 ± 0.004 0.109 ± 0.004 0.048 ± 0.004 0.157 ± 0.004 0.039 ± 0.002 PERFORATION DIAMETER PITCH POSITION D P0 E 1.50 + 0.10 4.00 ± 0.10 1.75 ± 0.10 0.059 + 0.004 0.157 ± 0.004 0.069 ± 0.004 CARRIER TAPE WIDTH THICKNESS W t1 8.00 +0.30 –0.10 0.229 ± 0.013 0.315 +0.012 –0.004 0.009 ± 0.0005 DISTANCE BETWEEN CENTERLINE CAVITY TO PERFORATION (WIDTH DIRECTION) F 3.50 ± 0.05 0.138 ± 0.002 CAVITY TO PERFORATION (LENGTH DIRECTION) P2 2.00 ± 0.05 0.079 ± 0.002 0.039 1 0.039 1 e1 inches mm Package Dimensions Recommended PCB Pad Layout for Avago’s Outline SOT-323 (SC-70 3 Lead) SC70 3L/SOT-323 Products e1 0.026 XXX E E1 e 0.079 L B C D 0.039 DIMENSIONS (mm) A A1 Notes: XXX-package marking Drawings are not to scale SYMBOL A A1 B C D E1 e e1 E L MIN. MAX. 0.80 1.00 0.00 0.10 0.15 0.40 0.10 0.20 1.80 2.25 1.10 1.40 0.65 typical 1.30 typical 1.80 2.40 0.425 typical 0.022 Dimensions in inches Tape Dimensions and Product Orientation For Outline SOT-323 (SC-70 3 Lead) P P2 D P0 E F W C D1 t1 (CARRIER TAPE THICKNESS) K0 8° MAX. A0 DESCRIPTION 8° MAX. B0 SYMBOL SIZE (mm) SIZE (INCHES) CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER A0 B0 K0 P D1 2.40 ± 0.10 2.40 ± 0.10 1.20 ± 0.10 4.00 ± 0.10 1.00 + 0.25 0.094 ± 0.004 0.094 ± 0.004 0.047 ± 0.004 0.157 ± 0.004 0.039 + 0.010 PERFORATION DIAMETER PITCH POSITION D P0 E 1.55 ± 0.05 4.00 ± 0.10 1.75 ± 0.10 0.061 ± 0.002 0.157 ± 0.004 0.069 ± 0.004 CARRIER TAPE WIDTH THICKNESS W t1 8.00 ± 0.30 0.254 ± 0.02 0.315 ± 0.012 0.0100 ± 0.0008 COVER TAPE WIDTH TAPE THICKNESS C Tt 5.4 ± 0.10 0.062 ± 0.001 0.205 ± 0.004 0.0025 ± 0.00004 DISTANCE CAVITY TO PERFORATION (WIDTH DIRECTION) F 3.50 ± 0.05 0.138 ± 0.002 CAVITY TO PERFORATION (LENGTH DIRECTION) P2 2.00 ± 0.05 0.079 ± 0.002 Tt (COVER TAPE THICKNESS) Applications Information P Schottky Diode Fundamentals The HBAT-540x series of clipping/clamping diodes are Schottky devices. A Schottky device is a rectifying, metal-semiconductor contact formed between a metal and an n‑doped or a p-doped semiconductor. When a metal-semiconductor junction is formed, free electrons flow across the junction from the semiconductor and fill the free-energy states in the metal. This flow of electrons creates a depletion or potential across the junction. The difference in energy levels between semiconductor and metal is called a Schottky barrier. P-doped, Schottky-barrier diodes excel at applications requiring ultra low turn-on voltage (such as zero-biased RF detectors). But their very low, breakdown-voltage and high series-resistance make them unsuitable for the clipping and clamping applications involving high forward currents and high reverse voltages. Therefore, this discussion will focus entirely on n‑doped Schottky diodes. Under a forward bias (metal connected to positive in an n‑doped Schottky), or forward voltage, VF, there are many electrons with enough thermal energy to cross the barrier potential into the metal. Once the applied bias exceeds the built-in potential of the junction, the forward current, IF, will increase rapidly as VF increases. When the Schottky diode is reverse biased, the potential barrier for electrons becomes large; hence, there is a small probability that an electron will have sufficient thermal energy to cross the junction. The reverse leakage current will be in the nanoampere to microampere range, depending upon the diode type, the reverse voltage, and the temperature. In contrast to a conventional p-n junction, current in the Schottky diode is carried only by majority carriers. Because no minority carrier charge storage effects are present, Schottky diodes have carrier lifetimes of less than 100 ps and are extremely fast switching semiconductors. Schottky diodes are used as rectifiers at frequencies of 50 GHz and higher. Another significant difference between Schottky and p-n diodes is the forward voltage drop. Schottky diodes have a threshold of typically 0.3 V in comparison to that of 0.6 V in p-n junction diodes. See Figure 6. N METAL N CAPACITANCE CURRENT CAPACITANCE CURRENT 0.6 V – 0.3 V + – + BIAS VOLTAGE BIAS VOLTAGE PN JUNCTION SCHOTTKY JUNCTION Figure 6. Through the careful manipulation of the diameter of the Schottky contact and the choice of metal deposited on the n-doped silicon, the important characteristics of the diode (junction capacitance, C J; parasitic series resistance, RS; breakdown voltage, VBR; and forward voltage, VF,) can be optimized for specific applications. The HSMS270x series and HBAT‑540x series of diodes are a case in point. Both diodes have similar barrier heights; and this is indicated by corresponding values of saturation current, IS. Yet, different contact diameters and epitaxiallayer thickness result in very different values of junction capacitance, C J and RS. This is portrayed by their SPICE parameters in Table 1. Table 1. HBAT-540x and HSMS‑270x SPICE Parameters. Parameter BV HBAT-540x HSMS-270x 40 V 25 V CJ0 3.0 pF 6.7 pF EG 0.55 eV 0.55 eV IBV 10E-4 A 10E-4 A IS 1.0E-7 A 1.4E-7 A N 1.0 1.04 RS 2.4 Ω 0.65 Ω PB 0.6 V 0.6 V PT 2 2 M 0.5 0.5 At low values of IF ≤ 1 mA, the forward voltages of the two diodes are nearly identical. However, as current rises above 10 mA, the lower series resistance of the HSMS270x allows for a much lower forward voltage. This gives the HSMS-270x a much higher current handling capability. The trade-off is a higher value of junction capacitance. The forward voltage and current plots illustrate the differences in these two Schottky diodes, as shown in Figure 7. 300 HBAT-540x 10 1 .1 .01 11600 (V F – I F R S ) 0 0.1 0.2 0.3 0.4 0.5 0.6 VF – FORWARD VOLTAGE (V) Figure 7. Forward Current vs. Forward Voltage Figure 7. Forward Currentatvs.25°C. Forward Voltage at 25°C. Because the automatic, pick-and-place equipment used to assemble these products selects dice from adjacent sites on the wafer, the two diodes which go into the HBAT5402 or HBAT-540C (series pair) are closely matched — without the added expense of testing and binning. Current Handling in Clipping/Clamping Circuits The purpose of a clipping/clamping diode is to handle high currents, protecting delicate circuits downstream of the diode. Current handling capacity is determined by two sets of characteristics, those of the chip or device itself and those of the package into which it is mounted. noisy data-spikes current limiting Vs long cross-site cable pull-down (or pull-up) 0V voltage limited to Vs + Vd 0V – Vd Figure 8. Two Schottky Diodes Are Used for Clipping/Clamping in a Circuit. Consider the circuit shown in Figure 8, in which two Schottky diodes are used to protect a circuit from noise spikes on a stream of digital data. The ability of the diodes to limit the voltage spikes is related to their ability to sink the associated current spikes. The importance of current handling capacity is shown in Figure 9, where the forward voltage generated by a forward current is compared in two diodes. The first is a conventional Schottky diode of the type generally used in RF circuits, with an RS of 7.7Ω. The second is a Schottky diode of identical characteristics, save the R S of 1.0 Ω. For the conventional diode, the relatively high value of RS causes the voltage across the diode’s terminals to rise as current increases. The power dissipated in the diode heats the junction, causing RS to climb, giving rise to a runaway thermal condition. In the second diode with low RS , such heating does not take place and the voltage across the diode terminals is maintained at a low limit even at high values of current. nT J IF = IS e –1 2 1 1 T J n –4060 T J – 298 IS = I0 e 298 (1) (2) (3) TJ = V F I F θ JC + TA where: I F = forward current IS = saturation current VF = forward voltage RS = series resistance TJ = junction temperature IO = saturation current at 25°C n = diode ideality factor θ JC = thermal resistance from junction to case (diode lead) = θpackage + θchip T A = ambient (diode lead) temperature Equation (1) describes the forward V-I curve of a Schottky diode. Equation (2) provides the value for the diode’s saturation current, which value is plugged into (1). Equation (3) gives the value of junction temperature as a function of power dissipated in the diode and ambient (lead) temperature. 6 VF – FORWARD VOLTAGE (V) I F – FORWARD CURRENT (mA) Maximum reliability is obtained in a Schottky diode when the steady state junction temperature is maintained at or below 150°C, although brief excursions to higher junction temperatures can be tolerated with no significant impact upon mean-time-to-failure, MTTF. In order to compute the junction temperature, Equations (1) and (3) below must be simultaneously solved. HSMS-270x 100 5 4 Rs = 7.7 Ω 3 2 Rs = 1.0 Ω 1 0 0 0.1 0.2 0.3 0.4 0.5 IF – FORWARD CURRENT (mA) Figure 9. Comparison of Two Diodes. Figure 9. Comparison of Two Diodes. The key factors in these equations are: RS, the series resistance of the diode where heat is generated under high current conditions; θ chip, the chip thermal resistance of the Schottky die; and θ package, or the package thermal resistance. RS for the HBAT-540x family of diodes is typically 2.4Ω, other than the HSMS-270x family, this is the lowest of any Schottky diode available. Chip thermal resistance is typically 40°C/W; the thermal resistance of the iron-alloyleadframe, SOT-23 package is typically 460°C/W; and the thermal resistance of the copper-leadframe, SOT-323 package is typically 110°C/W. The impact of package thermal resistance on the current handling capability of these diodes can be seen in Figures 3 and 4. Here the computed values of junction temperature vs. forward current are shown for three values of ambient temperature. The SOT-323 products, with their copper leadframes, can safely handle almost twice the current of the larger SOT-23 diodes. Note that the term “ambient temperature” refers to the temperature of the diode’s leads, not the air around the circuit board. It can be seen that the HBAT540B and HBAT‑540C products in the SOT‑323 package will safely withstand a steady-state forward current of 330 mA when the diode’s terminals are maintained at 75°C. Part Number Ordering Information Part Number No. of Devices Container HBAT-5400-BLKG HBAT-5400-TR1G HBAT-5400-TR2G 100 3,000 10,000 Antistatic Bag 7" Reel 13" Reel HBAT-5402-BLKG HBAT-5402-TR1G HBAT-5402-TR2G 100 3,000 10,000 Antistatic Bag 7" Reel 13" Reel HBAT-540B-BLKG HBAT-540B-TR1G HBAT-540B-TR2G 100 3,000 10,000 Antistatic Bag 7" Reel 13" Reel HBAT-540C-BLKG HBAT-540C-TR1G 100 3,000 Antistatic Bag 7" Reel HBAT-540C-TR2G 10,000 13" Reel For pulsed currents and transient current spikes of less than one microsecond in duration, the junction does not have time to reach thermal steady state. Moreover, the diode junction may be taken to temperatures higher than 150°C for short timeperiods without impacting device MTTF. Because of these factors, higher currents can be safely handled. The HBAT-540x family has the second highest current handling capability of any Avago diode, next to the HSMS-270x series. For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright © 2005-2008 Avago Technologies. All rights reserved. Obsoletes 5989-4779EN AV02-1394EN - July 4, 2008