Spec. No. : C152S6R Issued Date : 2003.05.28 Revised Date : 2005.01.14 Page No. : 1/6 CYStech Electronics Corp. PNP and NPN Dual Digital Transistors HBCA114ES6R Features •Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). •The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input for PNP transistor, and negative biasing of the input for NPN transistor. They also have the advantage of almost completely eliminating parasitic effects. •Only the on/off conditions need to be set for operation, making device design easy. •One DTA114E chip and one DTC114E chip in a SOT-363 package. •Mounting by SOT-323 automatic mounting machines is possible. •Mounting cost and area can be cut in half. •Transistor elements are independent, eliminating interference Equivalent Circuit SOT-363R HBCA114ES6R RBE2 RB2 TR1 TR2 RB1 RBE1 RB1=10kΩ , RB2=10 kΩ RBE1=10kΩ , RBE2=10 kΩ HBCA114ES6R CYStek Product Specification CYStech Electronics Corp. Spec. No. : C152S6R Issued Date : 2003.05.28 Revised Date : 2005.01.14 Page No. : 2/6 Absolute Maximum Ratings (Ta=25℃) Parameter Symbol Supply Voltage Input Voltage VCC VIN IO Output Current IO(max.) Pd Tj Tstg Total Power Dissipation Junction Temperature Storage Temperature Limits Tr1(NPN) Tr2(PNP) 50 -50 -10~+40 -40~+10 50 -50 100 -100 200 (Note) 150 -55~+150 Unit V V mA mA mW °C °C Note : 150mW per element must not be exceeded. Characteristics (Ta=25℃) •Tr1(NPN) Parameter Input Voltage Output Voltage Input Current Output Current DC Current Gain Input Resistance Resistance Ratio Transition Frequency Symbol Min. VI(off) VI(on) 3 VO(on) II IO(off) GI 30 R1 7 R2/R1 0.8 fT - Typ. 10 1 250 Max. Unit 0.5 V V 0.3 V 0.88 mA 0.5 µA 13 kΩ 1.2 MHz Test Conditions VCC=5V, IO=100µA VO=0.3V, IO=10mA IO/II=10mA/0.5mA VI=5V VCC=50V, VI=0V VO=5V, IO=5mA VCE=10V, IC=5mA, f=100MHz * * Transition frequency of the device •Tr2(PNP) Parameter Input Voltage Output Voltage Input Current Output Current DC Current Gain Input Resistance Resistance Ratio Transition Frequency Symbol Min. VI(off) VI(on) -3 VO(on) II IO(off) GI 30 R1 7 R2/R1 0.8 fT - Typ. 10 1 250 Max. Unit -0.5 V V -0.3 V -0.88 mA -0.5 µA 13 kΩ 1.2 MHz Test Conditions VCC=-5V, IO=-100µA VO=-0.3V, IO=-10mA IO/II=-10mA/-0.5mA VI=-5V VCC=-50V, VI=0V VO=-5V, IO=-5mA VCE=-10V, IC=-5mA, f=100MHz * * Transition frequency of the device HBCA114ES6R CYStek Product Specification Spec. No. : C152S6R Issued Date : 2003.05.28 Revised Date : 2005.01.14 Page No. : 3/6 CYStech Electronics Corp. Characteristic Curves •Tr1(NPN) Current Gain vs Output Current Output Voltage vs Output Current 1000 Output Voltage---V O(on)(mV) 1000 Current Gain---GI Vo=5V 100 Io / Ii=20 100 10 10 1 10 1 100 10 100 Output Current ---Io(mA) Output Current ---Io(mA) Output Current vs Input Voltage (OFF characteristics) Input Voltage vs Output Current (ON characteristics) 100 10 Output Current --- Io(mA) Input Voltage --- V I(on)(V) Vo=0.3V Vcc=5V 10 1 0.1 1 0.1 HBCA114ES6R 1 10 Output Current --- Io(mA) 100 0.1 1 Input Voltage --- VI(off)(V) 10 CYStek Product Specification Spec. No. : C152S6R Issued Date : 2003.05.28 Revised Date : 2005.01.14 Page No. : 4/6 CYStech Electronics Corp. •Tr2(PNP) Current Gain vs Output Current Output Voltage vs Output Current 10 1000 Io / Ii = 20 Output Voltage---VO(ON)(V) Current Gain---GI Vo = 5V 100 1 0.1 0.01 10 0.1 1 10 Output Current---IO(mA) 1 100 100 Output Current vs Input Voltage(OFF characteristics) Input Voltage vs Output Current(ON characteristics) 10 100 VCC = 5 V Output Current---IO(mA) Vo = 0.3V Input Voltage---VI(ON) (V) 10 Output Current---IO(mA) 10 1 1 0.1 0.01 0.1 0.1 1 10 Output Current---IO(mA) 100 0 0.5 1 1.5 2 2.5 3 Input Voltage---VI(OFF) (V) Power Derating Curves Power Dissipation---P D(mW) 250 200 Dual Single 150 100 50 0 0 HBCA114ES6R 50 100 150 Ambient Temperature---TA(℃) 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C152S6R Issued Date : 2003.05.28 Revised Date : 2005.01.14 Page No. : 5/6 Reel Dimension Carrier Tape Dimension HBCA114ES6R CYStek Product Specification CYStech Electronics Corp. Spec. No. : C152S6R Issued Date : 2003.05.28 Revised Date : 2005.01.14 Page No. : 6/6 SOT-363R Dimension Style: Pin 1. Emitter1 (E1) Pin 2. Base1 (B1) Pin 3. Collector2 (C2) Pin 4. Emitter2 (E2) Pin 5. Base2 (B2) Pin 6. Collector1 (C1) Marking: 11 6-Lead SOT-363R Plastic Surface Mounted Package CYStek Package Code: S6R *:Typical Inches Min. Max. 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026BSC 0.004 DIM A B C D G H Millimeters Min. Max. 1.8 2.2 1.15 1.35 0.8 1.1 0.1 0.3 0.65BSC 0.1 DIM J K N S Y Inches Min. Max. 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 0.012 0.016 Millimeters Min. Max. 0.1 0.25 0.1 0.30 0.20 REF 2.00 2.20 0.30 0.40 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : • Lead : 42 Alloy ; solder plating • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. HBCA114ES6R CYStek Product Specification