Chenmko HBM12PT High efficiency silicon rectifier Datasheet

HBM11PT
CHENMKO ENTERPRISE CO.,LTD
THRU
SURFACE MOUNT GLASS PASSIVATED
HIGH EFFICIENCY SILICON RECTIFIER
VOLTAGE RANGE 50 - 1000 Volts CURRENT 1.0 Ampere
HBM18PT
FEATURES
*
*
*
*
*
For surface mounted applications
Low forward voltage, high current capability
Low leakage current
Metallurgically bonded construction
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
* Glass passivated junction
* High temperature soldering guaranteed :
260oC/10 seconds at terminals
SMB
0.083 (2.11)
0.077 (1.96)
0.155 (3.94)
0.130 (3.30)
(2)
(1)
0.190 (4.75)
MECHANICAL DATA
0.160 (4.06)
Case: JEDEC SMB molded plastic
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: Indicated by cathode band
Weight: 0.003 ounces, 0.093 gram
0.012 (0.305)
0.006 (0.152)
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.220 (5.59)
0.205 (5.21)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 HZ, resistive or inductive load.
For capacitive load, derate current by 20%.
SMB
Dimensions in inches and (millimeters)
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )
RATINGS
SYMBOL
HBM11PT HBM12PT HBM13PT HBM14PT HBM15PT HBM16PT HBM17PT HBM18PT
UNITS
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
300
400
600
800
1000
Volts
Maximum RMS Voltage
VRMS
35
70
140
210
280
420
560
700
Volts
Maximum DC Blocking Voltage
VDC
50
100
200
300
400
600
800
1000
Volts
o
Maximum Average Forward Rectified Current TL = 110 C
IO
1.0
Amps
IFSM
30
Amps
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 1)
Operating and Storage Temperature Range
CJ
15
TJ, TSTG
12
pF
o
-65 to +150
C
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )
CHARACTERISTICS
SYMBOL
Maximum Instantaneous Forward Voltage at 1.0 A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage at TA = 25oC
Maximum Full Load Reverse Current Average,
Full Cycle at TA = 55oC
Maximum Reverse Recovery Time (Note 2)
NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 4.0 volts
2. Test Conditions : IF = 0.5 A, IR = -1.0 A, IRR = -0.25 A
VF
HBM11PT HBM12PT HBM13PT HBM14PT HBM15PT HBM16PT HBM17PT HBM18PT
1.0
1.3
1.5
1.7
UNITS
Volts
5.0
uAmps
100
uAmps
IR
trr
50
70
nSec
2002-5
RATING CHARACTERISTIC CURVES ( HBM11PT THRU HBM18PT )
10
NONINDUCTIVE
trr
+0.5A
(-)
D.U.T
(+)
0
PULSE
GENERATOR
(NOTE 2)
25 Vdc
(approx)
(-)
1
NONINDUCTIVE
OSCILLOSCOPE
(NOTE 1)
-0.25A
(+)
-1.0A
1cm
NOTES: 1. Rise Time = 7 ns max. Input Impedance =
1 megohm. 22 pF.
2. Rise Time = 10 ns max. Source Impedlance=
50 ohms.
SET TIME BASE FOR
10/20 nS/cm
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
1.0
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
0.5
0
0
25 50 75 100 125 150 175
LEAD TEMPERATURE ( OC )
TJ =100oC
1.0
TJ =25oC
.1
8P
T
HB
HB
T~
7P
HB
M1
M1
HB
M1
M1
6P
BM
~H
~H
4PT
1PT
M1
T
15P
T
13P
BM
Pulse Width = 300uS
1% Duty Cycle
1.0
HB
TJ =125oC
10
T
10
INSTANTANEOUS FORWARD CURRENT, ( A )
INSTANTANEOUS REVERSE CURRENT, (uA)
1.5
FIG. 4 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
100
0.1
TJ =25oC
.01
.001
.01
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE, ( % )
0
.2
.4
.6
.8
1.0
1.2 1.4
1.6
INSTANTANEOUS FORWARD VOLTAGE, ( V )
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
1.8
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
35
200
30
JUNCTION CAPACITANCE, ( pF )
PEAK FORWARD SURGE CURRENT, ( A )
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT, ( A )
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
NONINDUCTIVE
8.3ms Single Half Sine-Wave
(JEDEC Method)
25
20
15
10
5
0
100
60
40
HBM
11PT
20
HBM1
~HBM
15PT
6PT~H
10
BM18P
T
6
4
TJ =25oC
2
1
1
2
5
10
20
NUMBER OF CYCLES AT 60 Hz
50
100
.1
.2
.4
1.0
2
4
10
20
REVERSE VOLTAGE, ( V )
40
100
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