Chenmko HBM37PT High efficiency silicon rectifier Datasheet

HBM31PT
CHENMKO ENTERPRISE CO.,LTD
THRU
SURFACE MOUNT GLASS PASSIVATED
HIGH EFFICIENCY SILICON RECTIFIER
VOLTAGE RANGE 50 - 1000 Volts CURRENT 3.0 Amperes
HBM38PT
FEATURES
*
*
*
*
*
For surface mounted applications
Low forward voltage, high current capability
Low leakage current
Metallurgically bonded construction
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
* Glass passivated junction
* High temperature soldering guaranteed :
260oC/10 seconds at terminals
SMB
0.083 (2.11)
0.077 (1.96)
0.155 (3.94)
0.130 (3.30)
(1)
(2)
0.190 (4.75)
MECHANICAL DATA
0.160 (4.06)
Case: JEDEC SMB molded plastic
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: Indicated by cathode band
Weight: 0.003 ounces, 0.093 gram
0.012 (0.305)
0.006 (0.152)
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.220 (5.59)
0.205 (5.21)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 HZ, resistive or inductive load.
For capacitive load, derate current by 20%.
SMB
Dimensions in inches and (millimeters)
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )
RATINGS
SYMBOL
HBM31PT HBM32PT HBM33PT HBM34PT HBM35PT HBM36PT HBM37PT HBM38PT
UNITS
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
300
400
600
800
1000
Volts
Maximum RMS Voltage
VRMS
35
70
140
210
280
420
560
700
Volts
Maximum DC Blocking Voltage
VDC
50
100
200
300
400
600
800
1000
Volts
o
Maximum Average Forward Rectified Current TL = 90 C
IO
3.0
Amps
IFSM
90
Amps
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 1)
Operating and Storage Temperature Range
CJ
70
TJ, TSTG
50
pF
o
-65 to +150
C
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )
CHARACTERISTICS
SYMBOL
Maximum Instantaneous Forward Voltage at 3.0 A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage at TA = 25oC
Maximum Full Load Reverse Current Average,
Full Cycle at TA = 55oC
Maximum Reverse Recovery Time (Note 2)
NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 4.0 volts
2. Test Conditions : IF = 0.5 A, IR = -1.0 A, IRR = -0.25 A
VF
HBM31PT HBM32PTHBM33PT HBM34PT HBM35PT HBM36PT HBM37PT HBM38PT
1.0
1.3
1.5
1.7
UNITS
Volts
5.0
uAmps
100
uAmps
IR
trr
50
70
nSec
2002-5
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
NONINDUCTIVE
10
NONINDUCTIVE
trr
+0.5A
(-)
D.U.T
(+)
0
PULSE
GENERATOR
(NOTE 2)
25 Vdc
(approx)
(-)
1
NONINDUCTIVE
OSCILLOSCOPE
(NOTE 1)
-0.25A
(+)
-1.0A
1cm
NOTES: 1. Rise Time = 7 ns max. Input Impedance =
1 megohm. 22 pF.
2. Rise Time = 10 ns max. Source Impedlance=
50 ohms.
SET TIME BASE FOR
10/20 nS/cm
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
2.5
2.0
1.5
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
1.0
0.5
0
0
25 50 75 100 125 150 175
LEAD TEMPERATURE ( OC )
10
TJ =100oC
TJ =25oC
1.0
0.1
0
20
40
60
80
100
120
20
0
T
M3
T~
M3
7P
HB
HB
M3
6P
T
8P
T
35P
BM
BM
HB
1.8
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, ( pF )
40
~H
.2
.4
.6
.8
1.0
1.2 1.4
1.6
INSTANTANEOUS FORWARD VOLTAGE, ( V )
200
60
33P
T
0
120
80
~H
TJ =25oC
.01
.001
140
8.3ms Single Half Sine-Wave
(JEDEC Method)
M3
0.1
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
100
4PT
1.0
HB
TJ =125 C
Pulse Width = 300uS
1% Duty Cycle
1PT
o
M3
100
HB
INSTANTANEOUS FORWARD CURRENT, ( A )
INSTANTANEOUS REVERSE CURRENT, (uA)
3.0
10
PERCENT OF RATED PEAK REVERSE VOLTAGE, ( % )
PEAK FORWARD SURGE CURRENT, ( A )
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
FIG. 4 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
1000
.01
AVERAGE FORWARD CURRENT, ( A )
RATING CHARACTERISTIC CURVES ( HBM31PT THRU HBM38PT )
HBM
31PT
100
60
~HBM
35PT
HBM3
6PT~
40
HBM3
8PT
20
10
6
4
TJ =25oC
2
1
1
2
5
10
20
NUMBER OF CYCLES AT 60 Hz
50
100
.1
.2
.4
1.0
2
4
10
20
REVERSE VOLTAGE, ( V )
40
100
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