NPN DIGITAL T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HC124E █ APPLICATIONS Switching Circuit，Interface Circuit． █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） T stg ——Storage Temperature………………………… -55~150℃ TO-92S T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………300mW VCBO ——Collector-Base Voltage………………………………50V 1―Emitter，E 2―Collector,C 3―Base，B VCEO ——Collector-Emitter Voltage……………………………50V VE B O ——Emitter -Base Voltage……………………………… 10V IC——Collector Current………………………………………100mA █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage ５０ Ｖ BVCEO Collector-Emitter Breakdown Voltage ５０ Ｖ IC=10μA, IE=0 IC=0.1mA, IB=0 ０．１ μA VCB=40V, IE=0 ０．５ μA VCE=40V, IB=0 １５０ μA VEB=5V, IC=0 ICBO ICEO Collector Cut-off Current Collector Cut-off Current IEBO Emitter Cut-off Current ７０ HFE DC Current Gain ５６ VCE(sat) R2/R1 fT Cob VCE=5V, IC=5mA ０．１ ０．３ Ｖ IC=10mA, IB=0.5mA ０．８ １．１ １．５ Ｖ VCE=5V, IC=0.1mA １．０ １．９ ３．０ Ｖ VCE=0.2V, IC=5mA Input Resistor １５ ２２ ２９ Ｋｏｈｍ Resistance Ratio ０．９ １．０ １．１ Collector- Emitter Saturation Voltage ＶＩ（ｏｆｆ） Input Off Voltage ＶＩ（ｏｎ） Input On Voltage R1 １１３ Current Gain-Bandwidth Product ２５０ ＭＨｚ Output Capacitance ３．７ ｐＦ VCE=10V,IC=5mA VCB=10V,f=1ＭＨｚ