HUASHAN HC4242 Npn silicon transistor Datasheet

NPN S I L I C O N T RA N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
HC4242
█ APPLICATIONS
High Speed Switching And Power Amplifier.
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
TO-220
T stg ——Storage Temperature………………………… -55~150℃
T j ——Junction Temperature…………………………………150℃
PC——Collector Dissipation(Tc=25℃)……………………………40W
VCBO ——Collector-Base Voltage………………………………450V
1―Base,B
2―Collector,C
3―Emitter,E
VCEO——Collector-Emitter Voltage……………………………400V
VEBO——Emitter-Base Voltage……………………………………10V
IC——Collector Current………………………………………………7A
Ib——Base Current………………………………………………2A
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol
Characteristics
Min
Typ
Max
Unit
Test Conditions
BVCBO
Collector-Base Breakdown Voltage
450
V
IC=1mA,
IE=0
BVCEO
Collector-Emitter Breakdown Voltage
400
V
IC=100mA,
BVEBO
Emitter-Base Breakdown Voltage
10
V
IE=1mA,IC=0
IB=0
ICBO
Collector Cut-off Current
100
μA
VCB=450V, IE=0
IEBO
Emitter Cut-off Current
100
μA
VEB=10V, IC=0
HFE(1) DC Current Gain
15
VCE=5V, IC=0.8A
HFE(2)
10
VCE=5V, IC=2A
HFE(3)
10
VCE=5V, IC=4A
55
VCE(sat)
Collector- Emitter Saturation Voltage
0.8
V
IC=4A, IB=0.8A
VBE(sat)
Base-Emitter Saturation Voltage
1.2
V
IC=4A, IB=0.8A
█ hFE Classification
A
15—28
B1
22—35
B2
B3
B4
29—42
36—49
43—55
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