HSMC HD44H11 Npn epitaxial planar transistor Datasheet

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6762
Issued Date : 1994.11.09
Revised Date : 2002.01.15
Page No. : 1/3
HD44H11
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HD44H11 is designed for various specific and general purpose
applications, such as:output and driver stages of amplifiers operating
at frequencies from DC to greater than 1MHz; series, shunt and
switching regulators; low and high frequency inverters/converters;
and many others.
TO-220
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .....................................................................................+150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ..................................................................................... 50 W
Total Power Dissipation (Ta=25°C) .................................................................................. 1.67 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage....................................................................................... 80 V
BVCEO Collector to Emitter Voltage.................................................................................... 80 V
BVEBO Emitter to Base Voltage............................................................................................ 5 V
IC Collector Current............................................................................................................. 10 A
IB Base Current ..................................................................................................................... 5 A
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVCES
BVEBO
ICES
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
Cob
fT
Min.
80
80
80
5
60
40
-
Typ.
130
50
Max.
10
100
1
1.5
-
Unit
V
V
V
V
uA
uA
V
V
pF
MHz
Test Conditions
IC=100mA, IB=0
IC=100mA, IB=0
IC=1mA, IC=0
IE=1mA
VCE=80V
VEB=5V
IC=8A, IB=0.4A
IC=8A, IB=0.8A
IC=2A, VCE=1V
IC=4A, VCE=1V
VCB=10V
VCE=1V, IC=500mA, f=100MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HD44H11
HSMC Product Specification
HI-SINCERITY
Spec. No. : HE6762
Issued Date : 1994.11.09
Revised Date : 2002.01.15
Page No. : 2/3
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
Saturation Voltage & Collector Current
1000
o
75 C
o
125 C
hFE
Saturation Voltage (mV)
1000
100
o
25 C
o
100
75 C
o
125 C
o
25 C
hFE @ VCE=1V
VCE(s at) @ IC=20IB
10
10
1
10
100
1000
1
10000
Collector Current IC (mA)
100
1000
10000
Collector Current IC (mA)
Capacitance & Reverse-Biased Voltage
Saturation Voltage & Collector Current
1000
Capacitance (Pf)
10000
Saturation Voltage (mV)
10
o
75 C
1000
o
25 C
100
Cob
o
125 C
VBE(sat) @ IC=10IB
100
10
1
10
100
1000
10000
Collector Current IC (mA)
1
10
100
Reverse Biased Voltage (V)
Safe Operating Area
Collector Current (A)
100
10
1
PT=1 ms
PT=100 ms
PT=1s
0.1
0.01
1
10
100
1000
Forward Voltage (V)
HD44H11
HSMC Product Specification
HI-SINCERITY
Spec. No. : HE6762
Issued Date : 1994.11.09
Revised Date : 2002.01.15
Page No. : 3/3
MICROELECTRONICS CORP.
TO-220AB Dimension
Marking:
B
A
D
E
H
D 4 4 H 1 1
C
Control Code
Date Code
H
K
M
I
Style: Pin 1.Base 2.Collector 3.Emitter
3
G
N
2
1
4
P
O
3-Lead TO-220AB Plastic Package
HSMC Package Code: E
*: Typical
Inches
Min.
Max.
0.2197 0.2949
0.3299 0.3504
0.1732
0.185
0.0453 0.0547
0.0138 0.0236
0.3803 0.4047
*0.6398
DIM
A
B
C
D
E
G
H
Millimeters
Min.
Max.
5.58
7.49
8.38
8.90
4.40
4.70
1.15
1.39
0.35
0.60
9.66
10.28
*16.25
DIM
I
K
M
N
O
P
Inches
Min.
Max.
*0.1508
0.0295 0.0374
0.0449 0.0551
*0.1000
0.5000 0.5618
0.5701 0.6248
Millimeters
Min.
Max.
*3.83
0.75
0.95
1.14
1.40
*2.54
12.70
14.27
14.48
15.87
Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HD44H11
HSMC Product Specification
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