HUASHAN HE3055 Npn silicon transistor Datasheet

N P N S I L I C O N T RAN S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
HE3055
█ GENERAL PURPOSE AND SWITCHING APPLICATIONS
DCCURRENT GAIN SPECIFIED TO 10 AMPERES
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
TO-220
Tstg——Storage Temperature………………………… -55~150℃
Tj——Junction Temperature……………………………… 150℃
PC——Collector Dissipation(Tc=25℃)…………………… 75W
PC——Collector Dissipation(TA=25℃)……………………0.6W
VCBO——Collector-Base Voltage…………………………… 70V
1―Base,B
2―Collector,C
3―Emitter, E
VCEO——Collector-Emitter Voltage………………………… 60V
VEBO ——Emitter-Base Voltage……………………………… 5V
IC——Collector Current(DC)……………………………… 10A
IB——Base Current……………………………………………6A
█ 电参数(Ta=25℃)
Symbol
Characteristics
Min
BVCEO
Collector-Emitter Sustaining Voltage
60
ICEO
Collector Cutoff Current
IEBO
Emitter-Base Cutoff Current
HFE(1)
DC Current Gain
Max
Unit
Test Conditions
V
IC=10mA, IB=0
0.7
mA
VCE=30V, IB=0
5
mA
VEB=5V, IC=0
100
VCE=4V, IC=4A
5
HFE(2)
VCE(sat1)
20
Typ
Collector- Emitter Saturation Voltage
VCE(sat2)
VBE(on)
Base- Emitter Saturation Voltage
fT
Current Gain-Bandwidth Product
2.0
VCE=4V, IC=10A
1.1
V
IC=4A, IB=400mA
8
V
IC=10A, IB=3.3mA
1.8
V
VCE=4V, IC=4A
VCE=10V, IC=500mA
f=500KHz
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