DSK HER1610FC High efficiency rectifier Datasheet

Diode Semiconductor Korea
HER1610FC---HER1660FC
VOLTAGE RANGE: 100 --- 600 V
CURRENT: 16 A
HIGH EFFICIENCY RECTIFIER
FEATURES
ITO-220AB
Low cos t
Low leakage
4.5± 0.2
10.2± 0.2
3.1+0.2
-0.1
1
4.0± 0.3
13.5± 0.5
MECHANICAL DATA
Cas e:JEDEC ITO-220AB,molded plastic
Term inals : Solderable per
? 3.2± 0.2
PIN
2 3
8.2± 0.2
The plas tic m aterial carries U/L recognition 94V-0
16.5± 0.3
15.0± 0.5
High current capability
Eas ily cleaned with alcohol,Is opropanol
and s im ilar s olvents
φ 3.3± 0.1
Low forward voltage drop
2.6± 0.2
1.4± 0.1
0.6± 0.1
MIL- STD-750,Method 2026
Polarity: As marked
0.6± 0.1
2.6± 0.15
Weight:0.06 ounce, 1.67 grams
Dimensions in millimeters
Mounting pos ition: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
HER
HER
HER
HER
HER
HER
1610FC 1620FC 1630FC 1640FC 1650FC 1660FC
UNITS
Maximum recurrent peak reverse voltage
V RR M
100
200
300
400
500
600
V
Maximum RMS voltage
VRMS
70
140
210
280
350
420
V
Maximum DC blocking voltage
V DC
100
200
300
400
500
600
V
Maximum average f orw ard rectif ied current
@TC =100
IF(AV)
16
A
IFSM
200
A
Peak f orw ard surge current
8.3ms single half -sine-w ave
superimposed on rated load
@TJ =125
Maximum instantaneous f orw ard voltage
VF
@ 8.0A
Maximum reverse current
at rated DC blocking voltage
@TA =25
@TA =150
Maximum reverse recovery time
(Note1)
Operating junction temperature range
Storage temperature range
1.3
1.0
V
10
IR
t rr
1.7
A
500
50
100
TJ
- 55 ----- + 150
TSTG
- 55 ----- + 150
ns
NOTE: 1. Measured with I F =0.5A, I R=1A, I rr=0.25A.
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Diode Semiconductor Korea
HER1610FC---HER1660FC
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
N 1.
10
N 1.
trr
+0.5A
D.U.T.
(+)
25VDC
(approx)
(-)
PULSE
GENERATOR
(NOTE2)
0
-0.25A
OSCILLOSCOPE
(NOTE 1)
1
NONINDUCTIVE
-1.0A
1cm
SET TIME BASE FOR 25/50 ns/cm
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE =1M . 22pF.
JJJJ 2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 .
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
FIG.3 -- PEAK FORWARD SURGE CURRENT
1
0.1
0.01
.4
Tj=25oC
Pulse Width=300 s
1% Duty Cycle
.6
.8
1.0
1.2
1.4
1.6
1.8
200
TJ=125℃
8.3ms Single Half
Sine-Wave
AMPERES
PEAK FORWARD SURGE CURRENT
HE
R1
61
0F
C~
HE
R1
HE
62
0F
R1
C
63
0F
CHE
R1
HE
64
R1
0F
65
C
0F
CHE
R1
66
0F
C
10
0
1
2
4
8 10
20
40 60 80 100
NUMBER OF CYCLES AT 60Hz
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
z
FIG.4-FORWORD
DERATING CURVE
24
20
AMPERES
AVERAGE FORWARD CURRENT
AMPERES
INSTANTANEOUS FORWARD CURRENT
100
16
12
Single Phase
Half Wave 60HZ
Resistive or
Inductive Load
8.0
4.0
0
0
25
50
75
100
125
150
175
CASE TEMPERATURE,
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