Diode Semiconductor Korea HER2010C---HER2060C VOLTAGE RANGE: 100 --- 600 V CURRENT: 20 A HIGH EFFICIENCY RECTIFIERS FEATURES TO - 220AB 2.8± 0.1 Low cost Low leakage Low forward voltage drop 4.5± 0.2 10.2± 0.2 1.4± 0.2 ? 3.8± 0.15 19.0± 0.5 Easily cleaned with alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0 1 8.9± 0.2 High current capability PIN 2 3 3.5± 0.3 13.8± 0.5 2.6± 0.2 MECHANICAL DATA Case:JEDEC TO-220AB,molded plastic Terminals: Plated leads,solderable per MIL- STD-202,Method 208 0.9± 0.1 0.5± 0.1 2.5± 0.1 PIN 1 CASE PIN 2 PIN 3 Polarity: As marked Dimensions in millimeters Weight: 0.071 ounces,2.006grams Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. HER 2010C HER 2020C HER 2040C HER 2060C UNITS Maximum recurrent peak reverse voltage VRRM 100 200 400 600 V Maximum RMS voltage VRMS 70 140 280 420 V Maximum DC blocking voltage VDC 100 200 400 600 V Maximum average forw ard rectified current @TC =75 IF(AV) 20 A IFSM 200 A Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ =125 Maximum instantaneous forw ard voltage @ 10A Maximum reverse current at rated DC blocking voltage @TC=25 @TC=100 VF 1.0 1.3 10 IR 50 trr Typical junction capacitance (Note2) CJ 40 Typical thermal resistance (Note3) RθJC 2.5 TJ - 55 ---- + 150 TSTG - 55 ---- + 150 NOTE: 1. Measured with I F=0.5A, I R=1A, I rr=0.25A. 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 3.Thermal resistance junction to case. A 100 (Note1) Storage temperature range V 150 Maximum reverse recovery time Operating junction temperature range 1.7 ns pF /W www.diode.kr Diode Semiconductor Korea HER2010C---HER2060C FIG.1 -- TEST CIRCUIT DIAGRAM AND REV ERSE RECOVERY TIM E CHARACTERISTIC trr 10 N 1. 50 N 1. + 0 .5 A D.U.T. 0 PULSE GENERATOR (NOTE2) (+) 25VDC (approx) (-) -0 .2 5 A OSCILLOSCOPE (NOTE 1) 1 NONINDUCTIVE -1 .0 A 1 c m N OTES:1 .R ISE TIME = 7n s MAX.IN PU T IMPED AN C E = 1M .2 2p F. JJJJJ2.R ISE TIME =10 ns MAX.SOU R C E IMPED AN C E=5 0 . SE T TIM E BA SE FOR 25 ns/cm FIG.2 -- TYPICAL FORW ARD CHARACTERISTIC FIG.3 -- FORW ARD DERATING CURVE z 0C 0C R2 HE R2 HE 06 04 01 R2 HE 10 1.0 0.1 24 Single Phase Half Wave 60HZ Resistive or Inductive Load 20 AMPERES AVERAGE FORWARD CURRENT C 20 0C ~H ER 20 100 AMPERES INSTANTANEOUS FORWARD CURRENT 1000 16 12 8 4 0 0 25 .6 .8 1.0 1.2 1.4 1.6 1.8 100 125 150 175 2.0 C A S E TE M P ERA TURE, FIG.5 -- PEAK FORW ARD SURGE CURRENT 60 f=1MHz TJ=25 40 20 10 4 2 1 .2 .4 1.0 2 4 10 20 40 REV ERS E V OLTA GE ,VOLTS 100 200 AMPERES 100 PEAK FORWARD SURGE CURRENT FIG.4 -- TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE,pF 75 Tj=25oC Pulse Width=300 s 1% Duty Cycle INSTA NTANE OUS FORW ARD VOLTAGE , VOLTS .1 50 8.3ms Single Half Sine-Wave 100 0 1 5 10 50 100 NUM B ER OF CYCLES AT 60Hz www.diode.kr