DSK HER2060C High efficiency rectifier Datasheet

Diode Semiconductor Korea HER2010C---HER2060C
VOLTAGE RANGE: 100 --- 600 V
CURRENT: 20 A
HIGH EFFICIENCY RECTIFIERS
FEATURES
TO - 220AB
2.8± 0.1
Low cost
Low leakage
Low forward voltage drop
4.5± 0.2
10.2± 0.2
1.4± 0.2
? 3.8± 0.15
19.0± 0.5
Easily cleaned with alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
1
8.9± 0.2
High current capability
PIN
2 3
3.5± 0.3
13.8± 0.5
2.6± 0.2
MECHANICAL DATA
Case:JEDEC TO-220AB,molded plastic
Terminals: Plated leads,solderable per
MIL- STD-202,Method 208
0.9± 0.1
0.5± 0.1
2.5± 0.1
PIN 1
CASE
PIN 2
PIN 3
Polarity: As marked
Dimensions in millimeters
Weight: 0.071 ounces,2.006grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
HER
2010C
HER
2020C
HER
2040C
HER
2060C
UNITS
Maximum recurrent peak reverse voltage
VRRM
100
200
400
600
V
Maximum RMS voltage
VRMS
70
140
280
420
V
Maximum DC blocking voltage
VDC
100
200
400
600
V
Maximum average forw ard rectified current
@TC =75
IF(AV)
20
A
IFSM
200
A
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@TJ =125
Maximum instantaneous forw ard voltage
@ 10A
Maximum reverse current
at rated DC blocking voltage
@TC=25
@TC=100
VF
1.0
1.3
10
IR
50
trr
Typical junction capacitance
(Note2)
CJ
40
Typical thermal resistance
(Note3)
RθJC
2.5
TJ
- 55 ---- + 150
TSTG
- 55 ---- + 150
NOTE: 1. Measured with I F=0.5A, I R=1A, I rr=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3.Thermal resistance junction to case.
A
100
(Note1)
Storage temperature range
V
150
Maximum reverse recovery time
Operating junction temperature range
1.7
ns
pF
/W
www.diode.kr
Diode Semiconductor Korea
HER2010C---HER2060C
FIG.1 -- TEST CIRCUIT DIAGRAM AND REV ERSE RECOVERY TIM E CHARACTERISTIC
trr
10
N 1.
50
N 1.
+ 0 .5 A
D.U.T.
0
PULSE
GENERATOR
(NOTE2)
(+)
25VDC
(approx)
(-)
-0 .2 5 A
OSCILLOSCOPE
(NOTE 1)
1
NONINDUCTIVE
-1 .0 A
1 c m
N OTES:1 .R ISE TIME = 7n s MAX.IN PU T IMPED AN C E = 1M .2 2p F.
JJJJJ2.R ISE TIME =10 ns MAX.SOU R C E IMPED AN C E=5 0 .
SE T TIM E BA SE FOR 25 ns/cm
FIG.2 -- TYPICAL FORW ARD CHARACTERISTIC
FIG.3 -- FORW ARD DERATING CURVE
z
0C
0C
R2
HE
R2
HE
06
04
01
R2
HE
10
1.0
0.1
24
Single Phase
Half Wave 60HZ
Resistive or
Inductive Load
20
AMPERES
AVERAGE FORWARD CURRENT
C
20
0C
~H
ER
20
100
AMPERES
INSTANTANEOUS FORWARD CURRENT
1000
16
12
8
4
0
0
25
.6
.8
1.0
1.2
1.4
1.6
1.8
100
125
150
175
2.0
C A S E TE M P ERA TURE,
FIG.5 -- PEAK FORW ARD SURGE CURRENT
60
f=1MHz
TJ=25
40
20
10
4
2
1
.2
.4
1.0
2
4
10
20
40
REV ERS E V OLTA GE ,VOLTS
100
200
AMPERES
100
PEAK FORWARD SURGE CURRENT
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE,pF
75
Tj=25oC
Pulse Width=300 s
1% Duty Cycle
INSTA NTANE OUS FORW ARD VOLTAGE , VOLTS
.1
50
8.3ms Single Half
Sine-Wave
100
0
1
5
10
50
100
NUM B ER OF CYCLES AT 60Hz
www.diode.kr
Similar pages