Intersil HFA3046 Ultra high frequency transistor array Datasheet

HFA3046, HFA3096,
HFA3127, HFA3128
Data Sheet
October 1998
File Number 3076.10
Ultra High Frequency Transistor Arrays
Features
The HFA3046, HFA3096, HFA3127 and the HFA3128 are
Ultra High Frequency Transistor Arrays that are fabricated
from Intersil Corporation’s complementary bipolar UHF-1
process. Each array consists of five dielectrically isolated
transistors on a common monolithic substrate. The NPN
transistors exhibit a fT of 8GHz while the PNP transistors
provide a fT of 5.5GHz. Both types exhibit low noise (3.5dB),
making them ideal for high frequency amplifier and mixer
applications.
• NPN Transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz
The HFA3046 and HFA3127 are all NPN arrays while the
HFA3128 has all PNP transistors. The HFA3096 is an NPNPNP combination. Access is provided to each of the
terminals for the individual transistors for maximum
application flexibility. Monolithic construction of these
transistor arrays provides close electrical and thermal
matching of the five transistors.
For PSPICE models, please request AnswerFAX document
number 663046. Intersil also provides an Application Note
illustrating the use of these devices as RF amplifiers
(request AnswerFAX document 99315).
TEMP.
RANGE (oC)
• NPN Early Voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . 50V
• PNP Transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . 5.5GHz
• PNP Current Gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . 60
• PNP Early Voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . 20V
• Noise Figure (50Ω) at 1.0GHz . . . . . . . . . . . . . . . . . 3.5dB
• Collector-to-Collector Leakage. . . . . . . . . . . . . . . . . <1pA
• Complete Isolation Between Transistors
• Pin Compatible with Industry Standard 3XXX Series
Arrays
Applications
• VHF/UHF Amplifiers
• VHF/UHF Mixers
• IF Converters
• Synchronous Detectors
Ordering Information
PART NUMBER
• NPN Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . 130
PKG.
NO.
PACKAGE
HFA3046B
-55 to 125
14 Ld SOIC
M14.15
HFA3096B
-55 to 125
16 Ld SOIC
M16.15
HFA3127B
-55 to 125
16 Ld SOIC
M16.15
HFA3128B
-55 to 125
16 Ld SOIC
M16.15
Pinouts
HFA3046
TOP VIEW
1
2
Q1
Q5
3
4
HFA3096
TOP VIEW
14
1
13
2
Q1
Q5
3
12
4
Q2
11
5
5
Q4
10
6
9
7
8
Q3
Q2
Q4
6
7
8
3-447
Q3
HFA3127
TOP VIEW
16 NC
1
15
2
14
3
13
4
12
HFA3128
TOP VIEW
16
1
15
2
14
3
13
4
NC 5
12
NC 5
12
11
6
11
6
11
10
7
10
7
9
8
Q1
Q2
Q3
Q5
Q4
9
8
16
Q1
15
14
Q2
Q5
13
10
Q3
Q4
9
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
HFA3046, HFA3096, HFA3127, HFA3128
Absolute Maximum Ratings
Thermal Information
Collector to Emitter Voltage (Open Base) . . . . . . . . . . . . . . . . . . 8V
Collector to Base Voltage (Open Emitter) . . . . . . . . . . . . . . . . . 12V
Emitter to Base Voltage (Reverse Bias). . . . . . . . . . . . . . . . . . . 5.5V
Collector Current (100% Duty Cycle) . . . . . 18.5mA at TJ = 150oC
34mA at TJ = 125oC
37mA at TJ = 110oC
Peak Collector Current (Any Condition) . . . . . . . . . . . . . . . . . . 65mA
Thermal Resistance (Typical, Note 1)
θJA (oC/W)
14 Ld SOIC Package . . . . . . . . . . . . . . . . . . . . . . . .
120
16 Ld SOIC Package . . . . . . . . . . . . . . . . . . . . . . . .
115
Maximum Power Dissipation (Any One Transistor) . . . . . . . . 0.15W
Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . . 175oC
Maximum Junction Temperature (Plastic Package) . . . . . . . 150oC
Maximum Storage Temperature Range . . . . . . . . . . -65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC
(SOIC - Lead Tips Only)
Operating Information
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. θJA is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications
TA = 25oC
DIE
PARAMETER
TEST CONDITIONS
SOIC
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
DC NPN CHARACTERISTICS
Collector-to-Base Breakdown
Voltage, V(BR)CBO
IC = 100µA, IE = 0
12
18
-
12
18
-
V
Collector-to-Emitter Breakdown
Voltage, V(BR)CEO
IC = 100µA, IB = 0
8
12
-
8
12
-
V
Collector-to-Emitter Breakdown
Voltage, V(BR)CES
IC = 100µA, Base Shorted to Emitter
10
20
-
10
20
-
V
Emitter-to-Base Breakdown
Voltage, V(BR)EBO
IE = 10µA, IC = 0
5.5
6
-
5.5
6
-
V
Collector-Cutoff-Current, ICEO
VCE = 6V, IB = 0
-
2
100
-
2
100
nA
Collector-Cutoff-Current, ICBO
VCB = 8V, IE = 0
-
0.1
10
-
0.1
10
nA
Collector-to-Emitter Saturation
Voltage, VCE(SAT)
IC = 10mA, IB = 1mA
-
0.3
0.5
-
0.3
0.5
V
Base-to-Emitter Voltage, VBE
IC = 10mA
-
0.85
0.95
-
0.85
0.95
V
DC Forward-Current Transfer
Ratio, hFE
IC = 10mA
VCE = 2V
40
130
-
40
130
-
Early Voltage, VA
IC = 1mA, VCE = 3.5V
20
50
-
20
50
-
V
Base-to-Emitter Voltage Drift
IC = 10mA
-
-1.5
-
-
-1.5
-
mV/oC
-
1
-
-
1
-
pA
Collector-to-Collector Leakage
Electrical Specifications
TA = 25oC
DIE
PARAMETER
TEST CONDITIONS
SOIC
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
DYNAMIC NPN CHARACTERISTICS
Noise Figure
f = 1.0GHz, VCE = 5V,
IC = 5mA, ZS = 50Ω
-
3.5
-
-
3.5
-
dB
fT Current Gain-Bandwidth
Product
IC = 1mA, VCE = 5V
-
5.5
-
-
5.5
-
GHz
IC = 10mA, VCE = 5V
-
8
-
-
8
-
GHz
IC = 10mA, VCE = 5V
-
6
-
-
2.5
-
GHz
Power Gain-Bandwidth Product,
fMAX
3-448
HFA3046, HFA3096, HFA3127, HFA3128
Electrical Specifications
TA = 25oC (Continued)
DIE
PARAMETER
TEST CONDITIONS
SOIC
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
Base-to-Emitter Capacitance
VBE = -3V
-
200
-
-
500
-
fF
Collector-to-Base Capacitance
VCB = 3V
-
200
-
-
500
-
fF
Electrical Specifications
TA = 25oC
DIE
PARAMETER
TEST CONDITIONS
SOIC
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
DC PNP CHARACTERISTICS
Collector-to-Base Breakdown
Voltage, V(BR)CBO
IC = -100µA, IE = 0
10
15
-
10
15
-
V
Collector-to-Emitter Breakdown
Voltage, V(BR)CEO
IC = -100µA, IB = 0
8
15
-
8
15
-
V
Collector-to-Emitter Breakdown
Voltage, V(BR)CES
IC = -100µA, Base Shorted to Emitter
10
15
-
10
15
-
V
Emitter-to-Base Breakdown
Voltage, V(BR)EBO
IE = -10µA, IC = 0
4.5
5
-
4.5
5
-
V
Collector-Cutoff-Current, ICEO
VCE = -6V, IB = 0
-
2
100
-
2
100
nA
Collector-Cutoff-Current, ICBO
VCB = -8V, IE = 0
-
0.1
10
-
0.1
10
nA
Collector-to-Emitter Saturation
Voltage, VCE(SAT)
IC = -10mA, IB = -1mA
-
0.3
0.5
-
0.3
0.5
V
Base-to-Emitter Voltage, VBE
IC = -10mA
-
0.85
0.95
-
0.85
0.95
V
DC Forward-Current Transfer
Ratio, hFE
IC = -10mA, VCE = -2V
20
60
-
20
60
-
Early Voltage, VA
IC = -1mA, VCE = -3.5V
10
20
-
10
20
-
V
Base-to-Emitter Voltage Drift
IC = -10mA
-
-1.5
-
-
-1.5
-
mV/oC
-
1
-
-
1
-
pA
Collector-to-Collector Leakage
Electrical Specifications
TA = 25oC
DIE
PARAMETER
TEST CONDITIONS
SOIC
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
DYNAMIC PNP CHARACTERISTICS
Noise Figure
f = 1.0GHz, VCE = -5V,
IC = -5mA, ZS = 50Ω
-
3.5
-
-
3.5
-
dB
fT Current Gain-Bandwidth
Product
IC = -1mA, VCE = -5V
-
2
-
-
2
-
GHz
IC = -10mA, VCE = -5V
-
5.5
-
-
5.5
-
GHz
Power Gain-Bandwidth
Product
IC = -10mA, VCE = -5V
-
3
-
-
2
-
GHz
Base-to-Emitter Capacitance
VBE = 3V
-
200
-
-
500
-
fF
Collector-to-Base Capacitance
VCB = -3V
-
300
-
-
600
-
fF
3-449
HFA3046, HFA3096, HFA3127, HFA3128
TA = 25oC
Electrical Specifications
DIE
PARAMETER
TEST CONDITIONS
SOIC
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
DIFFERENTIAL PAIR MATCHING CHARACTERISTICS FOR THE HFA3046
Input Offset Voltage
IC = 10mA, VCE = 5V
-
1.5
5.0
-
1.5
5.0
mV
Input Offset Current
IC = 10mA, VCE = 5V
-
5
25
-
5
25
µA
Input Offset Voltage TC
IC = 10mA, VCE = 5V
-
0.5
-
-
0.5
-
µV/oC
S-Parameter and PSPICE model data is available from Intersil Sales Offices, and Intersil Corporation’s web site.
Common Emitter S-Parameters of NPN 3 µm x 50 µm Transistor
FREQ. (Hz)
|S11|
PHASE(S11)
|S21|
PHASE(S21)
|S12|
PHASE(S12)
|S22|
PHASE(S22)
VCE = 5V and IC = 5mA
1.0E+08
0.83
-11.78
11.07
168.57
1.41E-02
78.88
0.97
-11.05
2.0E+08
0.79
-22.82
10.51
157.89
2.69E-02
68.63
0.93
-21.35
3.0E+08
0.73
-32.64
9.75
148.44
3.75E-02
59.58
0.86
-30.44
4.0E+08
0.67
-41.08
8.91
140.36
4.57E-02
51.90
0.79
-38.16
5.0E+08
0.61
-48.23
8.10
133.56
5.19E-02
45.50
0.73
-44.59
6.0E+08
0.55
-54.27
7.35
127.88
5.65E-02
40.21
0.67
-49.93
7.0E+08
0.50
-59.41
6.69
123.10
6.00E-02
35.82
0.62
-54.37
8.0E+08
0.46
-63.81
6.11
119.04
6.27E-02
32.15
0.57
-58.10
9.0E+08
0.42
-67.63
5.61
115.57
6.47E-02
29.07
0.53
-61.25
1.0E+09
0.39
-70.98
5.17
112.55
6.63E-02
26.45
0.50
-63.96
1.1E+09
0.36
-73.95
4.79
109.91
6.75E-02
24.19
0.47
-66.31
1.2E+09
0.34
-76.62
4.45
107.57
6.85E-02
22.24
0.45
-68.37
1.3E+09
0.32
-79.04
4.15
105.47
6.93E-02
20.53
0.43
-70.19
1.4E+09
0.30
-81.25
3.89
103.57
7.00E-02
19.02
0.41
-71.83
1.5E+09
0.28
-83.28
3.66
101.84
7.05E-02
17.69
0.40
-73.31
1.6E+09
0.27
-85.17
3.45
100.26
7.10E-02
16.49
0.39
-74.66
1.7E+09
0.25
-86.92
3.27
98.79
7.13E-02
15.41
0.38
-75.90
1.8E+09
0.24
-88.57
3.10
97.43
7.17E-02
14.43
0.37
-77.05
1.9E+09
0.23
-90.12
2.94
96.15
7.19E-02
13.54
0.36
-78.12
2.0E+09
0.22
-91.59
2.80
94.95
7.21E-02
12.73
0.35
-79.13
2.1E+09
0.21
-92.98
2.68
93.81
7.23E-02
11.98
0.35
-80.09
2.2E+09
0.20
-94.30
2.56
92.73
7.25E-02
11.29
0.34
-80.99
2.3E+09
0.20
-95.57
2.45
91.70
7.27E-02
10.64
0.34
-81.85
2.4E+09
0.19
-96.78
2.35
90.72
7.28E-02
10.05
0.33
-82.68
2.5E+09
0.18
-97.93
2.26
89.78
7.29E-02
9.49
0.33
-83.47
2.6E+09
0.18
-99.05
2.18
88.87
7.30E-02
8.96
0.33
-84.23
2.7E+09
0.17
-100.12
2.10
88.00
7.31E-02
8.47
0.33
-84.97
2.8E+09
0.17
-101.15
2.02
87.15
7.31E-02
8.01
0.33
-85.68
2.9E+09
0.16
-102.15
1.96
86.33
7.32E-02
7.57
0.33
-86.37
3.0E+09
0.16
-103.11
1.89
85.54
7.32E-02
7.16
0.33
-87.05
3-450
HFA3046, HFA3096, HFA3127, HFA3128
Common Emitter S-Parameters of NPN 3 µm x 50 µm Transistor
FREQ. (Hz)
|S11|
(Continued)
PHASE(S11)
|S21|
PHASE(S21)
|S12|
PHASE(S12)
|S22|
PHASE(S22)
VCE = 5V and IC = 10mA
1.0E+08
0.72
-16.43
15.12
165.22
1.27E-02
75.41
0.95
-14.26
2.0E+08
0.67
-31.26
13.90
152.04
2.34E-02
62.89
0.88
-26.95
3.0E+08
0.60
-43.76
12.39
141.18
3.13E-02
52.58
0.79
-37.31
4.0E+08
0.53
-54.00
10.92
132.57
3.68E-02
44.50
0.70
-45.45
5.0E+08
0.47
-62.38
9.62
125.78
4.05E-02
38.23
0.63
-51.77
6.0E+08
0.42
-69.35
8.53
120.37
4.31E-02
33.34
0.57
-56.72
7.0E+08
0.37
-75.26
7.62
116.00
4.49E-02
29.47
0.51
-60.65
8.0E+08
0.34
-80.36
6.86
112.39
4.63E-02
26.37
0.47
-63.85
9.0E+08
0.31
-84.84
6.22
109.36
4.72E-02
23.84
0.44
-66.49
1.0E+09
0.29
-88.83
5.69
106.77
4.80E-02
21.75
0.41
-68.71
1.1E+09
0.27
-92.44
5.23
104.51
4.86E-02
20.00
0.39
-70.62
1.2E+09
0.25
-95.73
4.83
102.53
4.90E-02
18.52
0.37
-72.28
1.3E+09
0.24
-98.75
4.49
100.75
4.94E-02
17.25
0.35
-73.76
1.4E+09
0.22
-101.55
4.19
99.16
4.97E-02
16.15
0.34
-75.08
1.5E+09
0.21
-104.15
3.93
97.70
4.99E-02
15.19
0.33
-76.28
1.6E+09
0.20
-106.57
3.70
96.36
5.01E-02
14.34
0.32
-77.38
1.7E+09
0.20
-108.85
3.49
95.12
5.03E-02
13.60
0.31
-78.41
1.8E+09
0.19
-110.98
3.30
93.96
5.05E-02
12.94
0.31
-79.37
1.9E+09
0.18
-113.00
3.13
92.87
5.06E-02
12.34
0.30
-80.27
2.0E+09
0.18
-114.90
2.98
91.85
5.07E-02
11.81
0.30
-81.13
2.1E+09
0.17
-116.69
2.84
90.87
5.08E-02
11.33
0.30
-81.95
2.2E+09
0.17
-118.39
2.72
89.94
5.09E-02
10.89
0.29
-82.74
2.3E+09
0.16
-120.01
2.60
89.06
5.10E-02
10.50
0.29
-83.50
2.4E+09
0.16
-121.54
2.49
88.21
5.11E-02
10.13
0.29
-84.24
2.5E+09
0.16
-122.99
2.39
87.39
5.12E-02
9.80
0.29
-84.95
2.6E+09
0.15
-124.37
2.30
86.60
5.12E-02
9.49
0.29
-85.64
2.7E+09
0.15
-125.69
2.22
85.83
5.13E-02
9.21
0.29
-86.32
2.8E+09
0.15
-126.94
2.14
85.09
5.13E-02
8.95
0.29
-86.98
2.9E+09
0.15
-128.14
2.06
84.36
5.14E-02
8.71
0.29
-87.62
3.0E+09
0.14
-129.27
1.99
83.66
5.15E-02
8.49
0.29
-88.25
Common Emitter S-Parameters of PNP 3 µm x 50 µm Transistor
FREQ. (Hz)
|S11|
PHASE(S11)
|S21|
PHASE(S21)
|S12|
PHASE(S12)
|S22|
PHASE(S22)
VCE = -5V and IC = -5mA
1.0E+08
0.72
-16.65
10.11
166.77
1.66E-02
77.18
0.96
-10.76
2.0E+08
0.68
-32.12
9.44
154.69
3.10E-02
65.94
0.90
-20.38
3.0E+08
0.62
-45.73
8.57
144.40
4.23E-02
56.39
0.82
-28.25
4.0E+08
0.57
-57.39
7.68
135.95
5.05E-02
48.66
0.74
-34.31
5.0E+08
0.52
-67.32
6.86
129.11
5.64E-02
42.52
0.67
-38.81
3-451
HFA3046, HFA3096, HFA3127, HFA3128
Common Emitter S-Parameters of PNP 3 µm x 50 µm Transistor
(Continued)
FREQ. (Hz)
|S11|
PHASE(S11)
|S21|
PHASE(S21)
|S12|
PHASE(S12)
|S22|
PHASE(S22)
6.0E+08
0.47
-75.83
6.14
123.55
6.07E-02
37.66
0.61
-42.10
7.0E+08
0.43
-83.18
5.53
118.98
6.37E-02
33.79
0.55
-44.47
8.0E+08
0.40
-89.60
5.01
115.17
6.60E-02
30.67
0.51
-46.15
9.0E+08
0.38
-95.26
4.56
111.94
6.77E-02
28.14
0.47
-47.33
1.0E+09
0.36
-100.29
4.18
109.17
6.91E-02
26.06
0.44
-48.15
1.1E+09
0.34
-104.80
3.86
106.76
7.01E-02
24.33
0.41
-48.69
1.2E+09
0.33
-108.86
3.58
104.63
7.09E-02
22.89
0.39
-49.05
1.3E+09
0.32
-112.53
3.33
102.72
7.16E-02
21.67
0.37
-49.26
1.4E+09
0.30
-115.86
3.12
101.01
7.22E-02
20.64
0.36
-49.38
1.5E+09
0.30
-118.90
2.92
99.44
7.27E-02
19.76
0.34
-49.43
1.6E+09
0.29
-121.69
2.75
98.01
7.32E-02
19.00
0.33
-49.44
1.7E+09
0.28
-124.24
2.60
96.68
7.35E-02
18.35
0.32
-49.43
1.8E+09
0.28
-126.59
2.47
95.44
7.39E-02
17.79
0.31
-49.40
1.9E+09
0.27
-128.76
2.34
94.29
7.42E-02
17.30
0.30
-49.38
2.0E+09
0.27
-130.77
2.23
93.19
7.45E-02
16.88
0.30
-49.36
2.1E+09
0.26
-132.63
2.13
92.16
7.47E-02
16.52
0.29
-49.35
2.2E+09
0.26
-134.35
2.04
91.18
7.50E-02
16.20
0.28
-49.35
2.3E+09
0.26
-135.96
1.95
90.24
7.52E-02
15.92
0.28
-49.38
2.4E+09
0.25
-137.46
1.87
89.34
7.55E-02
15.68
0.28
-49.42
2.5E+09
0.25
-138.86
1.80
88.48
7.57E-02
15.48
0.27
-49.49
2.6E+09
0.25
-140.17
1.73
87.65
7.59E-02
15.30
0.27
-49.56
2.7E+09
0.25
-141.39
1.67
86.85
7.61E-02
15.15
0.26
-49.67
2.8E+09
0.25
-142.54
1.61
86.07
7.63E-02
15.01
0.26
-49.81
2.9E+09
0.24
-143.62
1.56
85.31
7.65E-02
14.90
0.26
-49.96
3.0E+09
0.24
-144.64
1.51
84.58
7.67E-02
14.81
0.26
-50.13
VCE = -5V, IC = -10mA
1.0E+08
0.58
-23.24
13.03
163.45
1.43E-02
73.38
0.93
-13.46
2.0E+08
0.53
-44.07
11.75
149.11
2.58E-02
60.43
0.85
-24.76
3.0E+08
0.48
-61.50
10.25
137.78
3.38E-02
50.16
0.74
-33.10
4.0E+08
0.43
-75.73
8.88
129.12
3.90E-02
42.49
0.65
-38.83
5.0E+08
0.40
-87.36
7.72
122.49
4.25E-02
36.81
0.58
-42.63
6.0E+08
0.37
-96.94
6.78
117.33
4.48E-02
32.59
0.51
-45.07
7.0E+08
0.35
-104.92
6.01
113.22
4.64E-02
29.39
0.47
-46.60
8.0E+08
0.33
-111.64
5.39
109.85
4.76E-02
26.94
0.43
-47.49
9.0E+08
0.32
-117.36
4.87
107.05
4.85E-02
25.04
0.40
-47.97
1.0E+09
0.31
-122.27
4.44
104.66
4.92E-02
23.55
0.37
-48.18
1.1E+09
0.30
-126.51
4.07
102.59
4.97E-02
22.37
0.35
-48.20
1.2E+09
0.30
-130.21
3.76
100.76
5.02E-02
21.44
0.33
-48.11
3-452
HFA3046, HFA3096, HFA3127, HFA3128
Common Emitter S-Parameters of PNP 3 µm x 50 µm Transistor
(Continued)
FREQ. (Hz)
|S11|
PHASE(S11)
|S21|
PHASE(S21)
|S12|
PHASE(S12)
|S22|
PHASE(S22)
1.3E+09
0.29
-133.46
3.49
99.14
5.06E-02
20.70
0.32
-47.95
1.4E+09
0.29
-136.33
3.25
97.67
5.09E-02
20.11
0.31
-47.77
1.5E+09
0.28
-138.89
3.05
96.33
5.12E-02
19.65
0.30
-47.58
1.6E+09
0.28
-141.17
2.87
95.10
5.15E-02
19.29
0.29
-47.39
1.7E+09
0.28
-143.21
2.70
93.96
5.18E-02
19.01
0.28
-47.23
1.8E+09
0.28
-145.06
2.56
92.90
5.21E-02
18.80
0.27
-47.09
1.9E+09
0.27
-146.73
2.43
91.90
5.23E-02
18.65
0.27
-46.98
2.0E+09
0.27
-148.26
2.31
90.95
5.26E-02
18.55
0.26
-46.91
2.1E+09
0.27
-149.65
2.20
90.05
5.28E-02
18.49
0.26
-46.87
2.2E+09
0.27
-150.92
2.10
89.20
5.30E-02
18.46
0.25
-46.87
2.3E+09
0.27
-152.10
2.01
88.37
5.33E-02
18.47
0.25
-46.90
2.4E+09
0.27
-153.18
1.93
87.59
5.35E-02
18.50
0.25
-46.97
2.5E+09
0.27
-154.17
1.86
86.82
5.38E-02
18.55
0.24
-47.07
2.6E+09
0.26
-155.10
1.79
86.09
5.40E-02
18.62
0.24
-47.18
2.7E+09
0.26
-155.96
1.72
85.38
5.42E-02
18.71
0.24
-47.34
2.8E+09
0.26
-156.76
1.66
84.68
5.45E-02
18.80
0.24
-47.55
2.9E+09
0.26
-157.51
1.60
84.01
5.47E-02
18.91
0.24
-47.76
3.0E+09
0.26
-158.21
1.55
83.35
5.50E-02
19.03
0.23
-48.00
25
IB = 200µA
20
IB = 160µA
100m
10m
COLLECTOR CURRENT
AND BASE CURRENT (A)
COLLECTOR CURRENT (mA)
Typical Performance Curves
IB =120µA
15
IB = 80µA
10
IB = 40µA
5
1m
VCE = 3V
IC
IB
100µ
10µ
1µ
100n
10n
0
1
2
3
4
COLLECTOR TO EMITTER VOLTAGE (V)
5
FIGURE 1. NPN COLLECTOR CURRENT vs COLLECTOR TO
EMITTER VOLTAGE
3-453
1n
0.5
0.6
0.7
0.8
0.9
BASE TO EMITTER VOLTAGE (V)
FIGURE 2. NPN COLLECTOR CURRENT AND BASE
CURRENT vs BASE TO EMITTER VOLTAGE
1.0
HFA3046, HFA3096, HFA3127, HFA3128
Typical Performance Curves
(Continued)
10.0
GAIN BANDWIDTH PRODUCT (GHz)
VCE = 3V
160
DC CURRENT GAIN
140
120
100
80
60
40
20
0
1µ
10µ
100µ
1m
10m
8.0
VCE = 5V
6.0
VCE = 1V
4.0
2.0
0
0.1
100m
FIGURE 3. NPN DC CURRENT GAIN vs COLLECTOR CURRENT
-100m
100
VCE = -3V
IC
-10m
IB = -320µA
COLLECTOR CURRENT
AND BASE CURRENT (A)
COLLECTOR CURRENT (mA)
10
FIGURE 4. NPN GAIN BANDWIDTH PRODUCT vs COLLECTOR
CURRENT (UHF 3 x 50 WITH BOND PADS)
IB = -400µA
-20
1.0
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (A)
-25
VCE = 3V
IB = -240µA
-15
IB = -160µA
-10
IB = -80µA
-5
IB
-1m
-100µ
-10µ
-1µ
-100n
-10n
0
0
-1
-2
-3
-4
-1n
-0.5
-5
COLLECTOR TO EMITTER VOLTAGE (V)
-0.6
-0.7
-0.8
-0.9
-1.0
BASE TO EMITTER VOLTAGE (V)
FIGURE 5. PNP COLLECTOR CURRENT vs COLLECTOR TO
EMITTER VOLTAGE
FIGURE 6. PNP COLLECTOR CURRENT AND BASE CURRENT
vs BASE TO EMITTER VOLTAGE
5.0
GAIN BANDWIDTH PRODUCT (GHz)
VCE = -3V
160
DC CURRENT GAIN
140
120
100
80
60
40
20
0
-1µ
-10µ
-100µ
-1m
-10m
-100m
VCE = -5V
4.0
VCE = -3V
3.0
VCE = -1V
2.0
1.0
-0.1
FIGURE 7. PNP DC CURRENT GAIN vs COLLECTOR
CURRENT
-10
-100
FIGURE 8. PNP GAIN BANDWIDTH PRODUCT vs COLLECTOR
CURRENT (UHF 3 x 50 WITH BOND PADS)
Die Characteristics
3-454
-1.0
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (A)
HFA3046, HFA3096, HFA3127, HFA3128
DIE DIMENSIONS:
PASSIVATION:
53 mils x 52 mils x 19 mils
1340µm x 1320µm x 483µm
Type: Nitride
Thickness: 4kÅ ±0.5kÅ
PROCESS:
METALLIZATION:
UHF-1
Type: Metal 1: AlCu(2%)/TiW
Thickness: Metal 1: 8kÅ ±0.4kÅ
Type: Metal 2: AlCu(2%)
Thickness: Metal 2: 16kÅ 0.8kÅ
SUBSTRATE POTENTIAL: (POWERED UP)
Unbiased
Metallization Mask Layout
HFA3096, HFA3127, HFA3128
2
1340µm
(53mils)
1
16
15
3
14
4
13
5
12
6
11
7
8
9
10
1320µm
(52mils)
HFA3046
2
1
14
13
3
1340µm
(53mils)
12
4
5
11
6
10
7
8
9
1320µm
(52mils)
Pad numbers correspond to SOIC pinout.
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3-455
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