Intersil HFA3134 Ultra high frequency matched pair transistor Datasheet

HFA3134, HFA3135
Data Sheet
February 1998
Ultra High Frequency Matched Pair
Transistors
File Number
4445
Features
• NPN Transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . .8.5GHz
The HFA3134 and HFA3135 are Ultra High Frequency
Transistor pairs that are fabricated with Intersil Corporation’s
complementary bipolar UHF-1X process. The NPN
transistors exhibit an fT of 8.5GHz, while the PNP transistors
have an fT of 7GHz. Both types exhibit low noise, making
them ideal for high frequency amplifier and mixer
applications.
Both arrays are matched high frequency transistor pairs. The
matching simplifies DC bias problems and it minimizes
imbalances in differential amplifier configurations. Their high
fT enables the design of UHF amplifiers which exhibit
exceptional stability.
• NPN Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . . 100
• NPN Noise Figure (50Ω) at 1.0GHz . . . . . . . . . . . . . 2.6dB
• PNP Transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . . 7GHz
• PNP Current Gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . . 57
• PNP Noise Figure (50Ω) at 900MHz . . . . . . . . . . . . 4.6dB
• Small Package (EIAJ-SC74 Compliant) . . . . . . . SOT23-6
Applications
• VHF/UHF Amplifiers
• VHF/UHF Mixers
Ordering Information
PART NUMBER
(BRAND)
• IF Converters
TEMP.
RANGE (oC)
PACKAGE
PKG.
NO.
HFA3134IH96
(H04)
-40 to 85
6 Ld SOT23
P6.064
HFA3135IH96
(H05)
-40 to 85
6 Ld SOT23
P6.064
• Synchronous Detectors
Pinouts
HFA3134
(SOT23)
TOP VIEW
1
HFA3135
(SOT23)
TOP VIEW
6
1
6
Q1
2
3
Q2
4-450
Q1
5
2
4
3
5
Q2
4
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
HFA3134, HFA3135
Absolute Maximum Ratings
Thermal Information
Collector to Emitter Voltage (RB ≤ 10kΩ to GND) . . . . . . . . . . . .11V
Collector to Base Voltage (Open Emitter) . . . . . . . . . . . . . . . . . .12V
Emitter to Base Voltage (Reverse Bias). . . . . . . . . . . . . . . . . . . 4.5V
Collector Current . . . . . . . . . . . . . . . . . . . . . . . .14mA at TJ =150oC
26mA at TJ =125oC
Base Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.7mA
ESD Rating
Human Body Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .400V
(Per MIL-STD-883 Method 3015.7)
Thermal Resistance (Typical, Note 1)
θJA (oC/W)
SOT23-6 Package . . . . . . . . . . . . . . . . . . . . . . . . . .
350
Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . . .175oC
Maximum Junction Temperature (Plastic Package) . . . . . . . .150oC
Maximum Storage Temperature Range . . . . . . . . . . -65oC to 150oC
Maximum Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . .300oC
(Soldering 10s, Lead Tips Only)
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . -40oC to 85oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. θJA is measured with the component mounted on an evaluation PC board in free air.
2. If a transistor is used in a diode configuration, the collector must be connected to the base to avoid exceeding the maximum base current specification.
Electrical Specifications
TA = 25oC
PARAMETER
SYMBOL
TEST CONDITIONS
TEST
LEVEL
(NOTE 3)
MIN
TYP
MAX
UNITS
DC CHARACTERISTICS FOR HFA3134 (NPN)
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC = 10µA, IE = 0
A
12
21
-
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC = 100µA, IB = 0
A
4
9
-
V
V(BR)CER
IC = 100µA, RB = 10kΩ
A
11
17
-
V
Emitter-to-Base Breakdown Voltage (Note 4)
V(BR)EBO
IE = 10µA, IC = 0
B
-
6
-
V
Collector-Cutoff-Current
ICEO
VCE = 6V, IB = 0
A
-5
-
5
nA
Collector-Cutoff-Current
ICBO
VCB = 8V, IE = 0
A
-5
-
5
nA
Emitter-Cutoff-Current (Note 5)
IEBO
VEB = 1V, IC = 0
B
-
1
-
pA
C
-
1
-
nA
Collector-to-Collector Leakage
Collector-to-Emitter Saturation Voltage
VCE(SAT)
IC = 10mA, IB = 1mA
A
-
95
250
mV
Base-to-Emitter Voltage (Note 5)
VBE
IC = 10mA, VCE = 2V
A
-
780
1000
mV
Q1 to Q2 Base-to-Emitter Voltage Match
(Note 5)
∆VBE
IC = 10mA, VCE = 2V
A
-
1.2
6
mV
IC = 1mA, VCE = 2V
A
-
1.0
6
mV
IC = 0.1mA, VCE = 2V
A
-
0.7
6
mV
IC = 10mA
C
-
-1.5
-
mV/oC
IC = 10mA, VCE = 2V
A
48
80
200
IC = 1mA, VCE = 2V
A
48
87
200
IC = 0.1mA, VCE = 2V
A
48
90
200
IC = 10mA, VCE = 5V
A
48
96
200
IC = 1mA, VCE = 5V
A
48
96
200
IC = 0.1mA, VCE = 5V
A
48
100
200
Base-to-Emitter Voltage Drift
DC Forward-Current Transfer Ratio
(Note 5)
hFE
Q1 to Q2 Current Transfer Ratio Match
∆hFE
1mA ≤ IC ≤ 10mA,
1V ≤ VCE ≤ 5V
A
-
2
8
%
Early Voltage
VA
IC = 1mA, ∆VCE = 3V
A
20
30
-
V
4-451
HFA3134, HFA3135
Electrical Specifications
TA = 25oC
TEST
LEVEL
(NOTE 3)
MIN
TYP
MAX
UNITS
f = 1.0GHz, IC = 10mA,
1V ≤ VCE ≤ 5V, ZS = 50Ω
B
-
2.4
-
dB
f = 1.0GHz, IC = 1mA,
1V ≤ VCE ≤ 5V, ZS = 50Ω
B
-
2.6
-
dB
IC = 10mA, VCE = 5V
B
-
8.5
-
GHz
IC = 1mA, VCE = 5V
B
-
3
-
GHz
IC = 10mA, VCE = 5V
B
-
7.5
-
GHz
Base-to-Emitter Capacitance
VBE = -0.5V
B
-
600
-
fF
Collector-to-Base Capacitance
VCB = 3V
B
-
500
-
fF
TEST
LEVEL
(NOTE 3)
MIN
TYP
MAX
UNITS
PARAMETER
SYMBOL
TEST CONDITIONS
DYNAMIC CHARACTERISTICS FOR HFA3134 (NPN)
Noise Figure
NF
Current Gain-Bandwidth Product
(Note 5)
fT
Power Gain-Bandwidth Product
fMAX
Electrical Specifications
TA = 25oC
PARAMETER
SYMBOL
TEST CONDITIONS
DC CHARACTERISTICS FOR HFA3135 (PNP)
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC = -10µA, IE = 0
A
12
21
-
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC = -100µA, IB = 0
A
4
14
-
V
V(BR)CER
IC = -100µA, RB = 10kΩ
A
11
23
-
V
Emitter-to-Base Breakdown Voltage (Note 4)
V(BR)EBO
IE = -10µA, IC = 0
B
-
5
-
V
Collector-Cutoff-Current
ICEO
VCE = -6V, IB = 0
A
-5
-
5
nA
Collector-Cutoff-Current
ICBO
VCB = -8V, IE = 0
A
-5
-
5
nA
Emitter-Cutoff-Current
IEBO
VEB = -1V, IC = 0
B
-
TBD
-
pA
B
-
1
-
nA
Collector-to-Collector Leakage
Collector-to-Emitter Saturation Voltage
VCE(SAT)
IC = -10mA, IB = -1mA
A
-
150
250
mV
Base-to-Emitter Voltage
VBE
IC = -10mA, VCE = -2V
A
-
850
1000
mV
Q1 to Q2 Base-to-Emitter Voltage Match
∆VBE
IC = -10mA, VCE = -2V
A
-
1
6
mV
IC = -1mA, VCE = -2V
A
-
1
6
mV
IC = -0.1mA, VCE = -2V
A
-
2
6
mV
IC = -10mA, VCE = -2V
A
15
40
125
IC = -1mA, VCE = -2V
A
15
47
125
IC = -0.1mA, VCE = -2V
A
15
52
125
IC = -10mA, VCE = -5V
A
15
47
125
IC = -1mA, VCE = -5V
A
15
53
125
IC = -0.1mA, VCE = -5V
A
15
57
125
DC Forward-Current Transfer Ratio
hFE
Q1 to Q2 Current Gain Match
∆hFE
-1mA ≤ IC ≤ -10mA,
-1V ≤ VCE ≤ -5V
A
-
1
8
%
Early Voltage
VA
IC = -1mA, ∆VCE = -3V
A
15
24
-
V
IC = -10mA
C
-
-1.4
-
mV/oC
Base-to-Emitter Voltage Drift
4-452
HFA3134, HFA3135
TA = 25oC
Electrical Specifications
PARAMETER
TEST
LEVEL
(NOTE 3)
MIN
TYP
MAX
UNITS
f = 900MHz, IC = -10mA,
-1V ≤ VCE ≤ -5V, ZS = 50Ω
B
-
5.2
-
dB
f = 900MHz, IC = -1mA,
-1V ≤ VCE ≤ -5V, ZS = 50Ω
B
-
4.6
-
dB
SYMBOL
TEST CONDITIONS
DYNAMIC CHARACTERISTICS FOR HFA3135 (PNP)
Noise Figure
NF
Current Gain-Bandwidth Product
fT
IC = -10mA, VCE = -5V
B
-
7
-
GHz
Power Gain-Bandwidth Product
fMAX
IC = -10mA, VCE = -5V
B
-
TBD
-
GHz
Base-to-Emitter Capacitance
VBE = 0.5V
B
-
550
-
fF
Collector-to-Base Capacitance
VCB = -3V
B
-
400
-
fF
NOTES:
3. Test Level: A. Production Tested; B. Typical or Guaranteed Limit Based on Characterization; C. Design Typical f+++++++++++++or Information
Only.
4. Measuring VEBO can degrade the transistor hFE and hFE match.
5. See Typical Performance Curves for more information.
Typical Performance Curves
IB = 200µA
20
Q1
COLLECTOR CURRENT (mA)
18
Q2
IB = 160µA
16
Q1
14
Q2
IB = 120µA
12
Q1
10
Q2
8
IB = 80µA
Q1
6
Q2
IB = 40µA
Q1
4
Q2
2
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 1. NPN COLLECTOR CURRENT vs COLLECTOR TO
EMITTER VOLTAGE
4-453
COLLECTOR CURRENT AND BASE CURRENT (A)
TA = 25oC, Unless Otherwise Specified
Q1
100m
Q2
10m
Q1
1m
Q2
100µ
IC
10µ
1µ
100n
IB
10n
1n
100p
10p
0.4
0.5
0.6
0.8
0.7
0.9
BASE TO EMITTER VOLTAGE (V)
1.0
FIGURE 2. NPN COLLECTOR AND BASE CURRENTS vs BASE
TO EMITTER VOLTAGE
HFA3134, HFA3135
Typical Performance Curves
TA = 25oC, Unless Otherwise Specified (Continued)
130
10
120
Q1
VCE = 5V
DC CURRENT GAIN
100
90
80
VCE = 3V
Q2
70
VCE = 1V
60
VCE = 5V
9
GAIN BANDWIDTH (GHz)
110
Q1
Q2
50
VCE = 3V
8
7
6
5
4
VCE = 1V
3
2
40
1
30
20
1n
1n
100n
1µ
10µ
100µ
1m
10m
0.1
100m
1
10
100
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (A)
FIGURE 3. NPN DC CURRENT GAIN vs COLLECTOR CURRENT
FIGURE 4. NPN GAIN BANDWIDTH PRODUCT vs
COLLECTOR CURRENT
1n
EMITTER LEAKAGE CURRENT (A)
COLLECTOR = OPEN
100p
10p
1p
0.1p
0
-0.3
-0.6
-0.9
-1.2
-1.5
-1.8
-2.1
-2.4
-2.7
-3.0
BASE TO EMITTER VOLTAGE (V)
FIGURE 5. NPN EMITTER CUTTOFF CURRENT vs BASE TO EMITTER VOLTAGE
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4-454
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