Vishay HFA60FA120P Hexfred ultrafast soft recovery diode, 60 a Datasheet

HFA60FA120P
Vishay Semiconductors
HEXFRED®
Ultrafast Soft Recovery Diode, 60 A
FEATURES
• Fast recovery time characteristic
• Electrically isolated base plate
• Large creepage distance between terminal
• Simplified mechanical designs, rapid assembly
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
SOT-227
• Designed and qualified for industrial level
DESCRIPTION/APPLICATIONS
The dual diode series configuration (HFA60FA120P) is used
for output rectification or freewheeling/clamping operation
and high voltage application.
The semiconductor in the SOT-227 package is isolated from
the copper base plate, allowing for common heatsinks and
compact assemblies to be built.
These modules are intended for general applications such
as HV power supplies, electronic welders, motor control and
inverters.
PRODUCT SUMMARY
VR
1200 V
VF (typical)
2.2 V
trr (typical)
123 ns
IF(DC) at TC
30 A at 110 °C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Cathode to anode voltage
VR
Continuous forward current
IF
TEST CONDITIONS
TC = 110 °C
MAX.
UNITS
1200
V
30
Single pulse forward current
IFSM
TJ = 25 °C
350
Maximum repetitive forward current
IFRM
Rated VR, square wave, 20 kHz, TC = 60 °C
110
TC = 25 °C
216
TC = 100 °C
86
Maximum power dissipation
PD
RMS isolation voltage
VISOL
Operating junction and storage
temperature range
Any terminal to case, t = 1 minute
TJ, TStg
A
W
2500
V
- 55 to + 150
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Cathode to anode
breakdown voltage
Forward voltage
Reverse leakage current
Document Number: 94609
Revision: 22-Jul-10
SYMBOL
VBR
VFM
IRM
TEST CONDITIONS
MIN.
TYP.
MAX.
1200
-
-
IF = 30 A
-
2.2
3.0
IF = 60 A
-
2.7
3.8
IR = 100 μA
UNITS
V
IF = 60 A, TJ = 150 °C
-
3.4
-
VR = VR rated
-
1.0
75
μA
TJ = 150 °C, VR = VR rated
-
2.7
10
mA
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
1
HFA60FA120P
Vishay Semiconductors
HEXFRED®
Ultrafast Soft Recovery Diode, 60 A
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Reverse recovery time
trr
Peak recovery current
IRRM
Reverse recovery charge
Qrr
TEST CONDITIONS
MIN.
TYP.
MAX.
TJ = 25 °C
-
123
-
TJ = 125 °C
-
188
-
-
12
-
-
17
-
IF = 50 A
TJ = 25 °C
dIF/dt = - 200 A/μs
TJ = 125 °C
VR = 200 V
TJ = 25 °C
-
675
-
TJ = 125 °C
-
1500
-
MIN.
TYP.
MAX.
-
-
0.58
-
-
0.29
-
0.05
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Junction to case, single leg conducting
Junction to case, both legs conducting
Case to heatsink
TEST CONDITIONS
RthJC
RthCS
Flat, greased and surface
UNITS
°C/W
Weight
-
30
-
g
Mounting torque
-
1.3
-
Nm
www.vishay.com
2
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 94609
Revision: 22-Jul-10
HFA60FA120P
HEXFRED®
Vishay Semiconductors
Ultrafast Soft Recovery Diode, 60 A
10
150°C
Reverse Current - IR (mA)
Instantaneous Forward Current - IF (A)
1000
100
10
Tj = 150°C
Tj = 125°C
Tj = 25°C
1
125°C
0.1
0.01
25°C
0.001
0.0001
1
200
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
400
600
800
1000
1200
Reverse Voltage - VR (V)
Forward Voltage Drop - VFM (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Thermal Impedance ZthJC (°C/W)
1
D = 0.75
D = 0.5
0.1
D = 0.33
D = 0.25
D = 0.2
0.01
Single Pulse
(Thermal Resistance)
0.001
0.0001
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
t1, Rectangular Pulse Duration (Seconds)
Fig. 3 - Maximum Thermal Impedance ZthJC Characteristics
120
140
Average Power Loss - (Watts)
Allowable Case Temperature (°C)
160
120
100
DC
80
60
Square wave (D=0.50)
80% rated Vr applied
40
20
180°
120°
90°
60°
30°
100
80
DC
RMS Limit
60
40
20
see note (1)
0
0
0
10 20 30 40 50 60
Average Forward Current - IF(AV)(A)
70
Fig. 4 - Maximum Allowable Case Temperature vs.
Average Forward Current
Document Number: 94609
Revision: 22-Jul-10
0
10
20
30
40
50
Average Forward Current - IF(AV) (A)
Fig. 5 - Forward Power Loss Characteristics
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
HFA60FA120P
Vishay Semiconductors
HEXFRED®
Ultrafast Soft Recovery Diode, 60 A
2500
250
Vr = 200V
Vr = 200V
2000
150
If = 50A, Tj = 125°C
If = 50A, Tj = 125°C
Q rr (nC)
t rr (ns)
200
If = 50A, Tj = 25°C
1500
1000
100
If = 50A, Tj = 25°C
500
50
100
0
100
1000
1000
dIF /dt (A/μs)
dIF /dt (A/μs)
Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 7 - Typical Stored Charge vs. dIF/dt
40
Vr = 200V
30
I rr (A)
If = 50A, Tj = 125°C
20
If = 50A, Tj = 25°C
10
0
100
1000
dIF /dt (A/μs)
Fig. 8 - Typical Peak Recovery Current vs. dIF/dt
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
www.vishay.com
4
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 94609
Revision: 22-Jul-10
HFA60FA120P
HEXFRED®
Vishay Semiconductors
Ultrafast Soft Recovery Diode, 60 A
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
dIF/dt
adjust
D
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 94609
Revision: 22-Jul-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
5
HFA60FA120P
Vishay Semiconductors
HEXFRED®
Ultrafast Soft Recovery Diode, 60 A
ORDERING INFORMATION TABLE
Device code
HF
A
60
FA
120
P
1
2
3
4
5
6
1
-
HEXFRED® family
2
-
Process designator (A = Electron irradiated)
3
-
Average current (60 = 60 A)
4
-
Package outline (FA = SOT-227)
5
-
Voltage rating (120 = 1200 V)
6
-
P = Lead (Pb)-free
CIRCUIT CONFIGURATION
1
4
2
3
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95036
Packaging information
www.vishay.com/doc?95037
www.vishay.com
6
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 94609
Revision: 22-Jul-10
Outline Dimensions
Vishay Semiconductors
SOT-227
DIMENSIONS in millimeters (inches)
38.30 (1.508)
37.80 (1.488)
Chamfer
2.00 (0.079) x 45°
4 x M4 nuts
Ø 4.40 (0.173)
Ø 4.20 (0.165)
-A3
4
6.25 (0.246)
12.50 (0.492)
25.70 (1.012)
25.20 (0.992)
-B-
1
2
R full
7.50 (0.295)
15.00 (0.590)
30.20 (1.189)
29.80 (1.173)
8.10 (0.319)
4x
7.70 (0.303)
2.10 (0.082)
1.90 (0.075)
0.25 (0.010) M C A M B M
2.10 (0.082)
1.90 (0.075)
-C-
12.30 (0.484)
11.80 (0.464)
0.12 (0.005)
Notes
• Dimensioning and tolerancing per ANSI Y14.5M-1982
• Controlling dimension: millimeter
Document Number: 95036
Revision: 28-Aug-07
For technical questions, contact: [email protected]
www.vishay.com
1
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
1
Similar pages