Rectron HFM103W Surface mount high efficiency silicon rectifier voltage range 50 to 1000 volts current 1.0 ampere Datasheet

RECTRON
HFM101W
SEMICONDUCTOR
THRU
TECHNICAL SPECIFICATION
HFM108W
SURFACE MOUNT
HIGH EFFICIENCY SILICON RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
FEATURES
*
*
*
*
*
Ideal for surface mounted applications
Low leakage current
Metallurgically bonded construction
Mounting position: Any
Weight: 0.057 gram
SMX
MECHANICAL DATA
* Epoxy : Device has UL flammability classification 94V-0
.209 (5.31)
.185 (4.70)
.110 (2.79)
.086 (2.18)
.180 (4.57)
.091 (2.31)
.067 (1.70)
.160 (4.06)
.008 (0.20)
.011 (0.28)
.007 (0.18)
.010 (0.25)
.071 (1.80)
.051 (1.30)
.059 (1.50)
.035 (0.89)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 o C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At TA = 25oC unless otherwise noted)
RATINGS
SYMBOL
HFM101W HFM102W HFM103W HFM104W HFM105W HFM106W HFM107W HFM108W
UNITS
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
300
400
600
800
1000
Volts
Maximum RMS Volts
VRMS
35
70
140
210
280
420
560
700
Volts
Maximum DC Blocking Voltage
VDC
50
100
200
300
400
600
800
1000
Volts
Maximum Average Forward Current
at TA = 50oC
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
IO
1.0
Amps
30
IFSM
CJ
15
TJ, TSTG
Amps
12
pF
0
-65 to + 150
C
ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted)
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
SYMBOL
VF
Maximum Full Load Reverse Current, Full cycle Average TA = 55oC
Maximum DC Reverse Current at
@TA = 25oC
Rated DC Blocking Voltage
@TA = 125oC
IR
Maximum Reverse Recovery Time (Note 1)
trr
NOTES : 1. Test Conditions: IF=0.5A, I R=-1.0A, IRR=-0.25A.
2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts.
3. ”Fully ROHS compliant”,”100% Sn plating (Pb free).
HFM101W HFM102W HFM103W HFM104W HFM105W HFM106W HFM107W HFM108W
1.0
1.3
50
1.7
UNITS
Volts
50
uAmps
5.0
100
uAmps
uAmps
75
nSec
2005-10
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
trr
+0.5A
(-)
0
(NOTE 2)
(+)
-1.0A
1cm
SET TIME BASE FOR
10/20 ns/cm
1.0
TJ = 25
.1
.01
10
~H
FM
FM
W
FM
~H
.1
TJ = 25
.01
Pulse Width = 300uS
1% Duty Cycle
.001
0
20
40
60
80
100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
PEAK FORWARD SURGE CURRENT, (A)
103
1.0
10
8W
5W
10
01W
TJ = 100
FIG. 4 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
M1
TJ = 150
10
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE (
HF
100
INSTANTANEOUS FORWARD CURRENT, (A)
INSTANTANEOUS REVERSE CURRENT, (uA)
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
0
~H
1 megohm. 22pF.
2. Rise Time = 10ns max. Souce Impedance =
50 ohms.
W
NOTES:1 Rise Time = 7ns max. Input Impedance =
1.0
6W
OSCILLOSCOPE
(NOTE 1)
04
1
NONINDUCTIVE
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
10
GENERATOR
-0.25A
M
PULSE
2.0
HF
D.U.T
(+)
25 Vdc
(approx)
(-)
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
M1
10
NONINDUCTIVE
HF
50
NONINDUCTIVE
AVERAGE FORWARD CURENT, (A)
RATING AND CHARACTERISTIC CURVES ( HFM101W THRU HFM108W )
0
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
60
JUNCTION CAPACITANCE, (pF)
70
8.3ms Single Half Sine-Wave
(JEDEC Method)
50
40
30
20
10
0
.2 .4 .6 .8 1.0 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE, (V)
200
100
60
40
HFM
101
20
10
TJ = 25
6
4
W~
HFM
105
W
HFM
106
W~
HFM
108
W
2
1
1
2
5
10
20
50
NUMBER OF CYCLES AT 60Hz
100
.1
.2
.4
1.0 2
4
10 20 40
REVERSE VOLTAGE, ( V )
RECTRON
100
)
Mounting Pad Layout
0.094 MAX.
(2.38 MAX.)
0.071 MIN.
(1.80 MIN.)
0.052 MIN.
(1.32 MIN.)
0.220
(5.58) REF
Dimensions in inches and (millimeters)
RECTRON
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