Formosa HFM203-L Chip silicon rectifier - ultra fast recovery type Datasheet

Formosa MS
Chip Silicon Rectifier
HFM201-L THRU HFM207-L
Ultra fast recovery type
Features
SMA-L
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
0.205(5.2)
0.189(4.8)
0.012(0.3) Typ.
For surface mounted applications.
0.110(2.8)
0.094(2.4)
Exceeds environmental standards of MIL-S-19500 /
228
0.181(4.6)
0.165(4.2)
Low leakage current.
0.075(1.9)
0.067(1.7)
0.040(1.0) Typ.
0.040 (1.0) Typ.
Mechanical data
Dimensions in inches and (millimeters)
Case : Molded plastic, JEDEC DO-214AC
Terminals : Solder plated, s olderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.0015 ounce, 0.05 gram
MAXIMUM RATINGS (AT TA=25oC unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
o
Forward rectified current
Ambient temperature = 50 C
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
25o C
VR = VRRM TA =
Reverse current
MAX.
UNIT
IO
1.0
A
IFSM
50
A
5.0
uA
150
Junction to ambient
Diode junction capacitance
Rq JA
f=1MHz and applied 4vDC reverse voltage
TSTG
V RRM
*1
V RMS
*2
(V)
(V)
VR
*3
(V)
HFM201-L
H21
50
35
50
HFM202-L
H22
100
70
100
HFM203-L
H23
200
140
200
HFM204-L
H24
400
280
400
HFM205-L
H25
600
420
600
HFM206-L
H26
800
560
800
HFM207-L
H27
1000
700
1000
VF
*4
(V)
T RR
*5
(nS)
uA
o
20
CJ
Storage temperature
MARKING
CODE
TYP.
IR
VR = VRRM TA = 100o C
Thermal resistance
SYMBOLS
MIN.
C / w
25
-55
pF
+150
(o C)
*1 Repetitive peak reverse voltage
50
*2 RMS voltage
-55 to +150
*3 Continuous reverse voltage
*4 Maximum forward voltage
1.7
75
C
Operating
temperature
1.0
1.3
o
*5 Reverse recovery time
RATING AND CHARACTERISTIC CURVES (HFM201-L THRU HFM207-L)
FIG.2-TYPICAL FORWARD CURRENT
DERATING CURVE
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
L
7FM
20
H
4-L
L~
5FM
20
H
1-L
1.0
HF
M2
0
HF
M2
0
.1
2.4
2.0
1.6
Single Phase
1.2
Half Wave 60Hz
Resistive Or Inductive Load
0.8
P.C.B. MOUNTED ON
0.3" * 0.3" (8.0mm * 8.0mm)
0.4
COPPER PAD AREAS
0
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE ( C)
Tj=25 C
Pulse Width 300us
1% Duty Cycle
.01
.6
.8
1.0
1.2
1.4
1.6
1.8
FORWARD VOLTAGE,(V)
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
50W
NONINDUCTIVE
10W
NONINDUCTIVE
( )
(+)
D.U.T.
25Vdc
(approx.)
PEAK FORWARD SURGE CURRENT,(A)
.001
.4
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
PULSE
GENERATOR
(NOTE 2)
( )
50
40
30
Sine Wave
20
JEDEC method
10
1
5
(+)
1W
NONINDUCTIVE
8.3ms Single Half
Tj=25 C
0
50
10
100
NUMBER OF CYCLES AT 60Hz
OSCILLISCOPE
(NOTE 1)
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
FIG.5-TYPICAL JUNCTION CAPACITANCE
175
trr
JUNCTION CAPACITANCE,(pF)
INSTANTANEOUS FORWARD CURRENT,(A)
~H
FM
20
3-L
AVERAGE FORWARD CURRENT,(A)
10
|
|
|
|
|
|
|
|
+0.5A
0
-0.25A
-1.0A
120
100
80
60
40
20
1cm
SET TIME BASE FOR
50 / 10ns / cm
0
.01
.05
.1
.5
1
REVERSE VOLTAGE,(V)
5
10
50
100
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