SUNMATE HFM501 Surface mount high efficiency rectifier diode Datasheet

HFM501 - HFM508
SURFACE MOUNT HIGH EFFICIENCY RECTIFIER DIODES
VOLTAGE RANGE: 50 - 1000V
CURRENT: 5.0 A
Features
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Glass Passivated Die Construction
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Ideally Suited for Automatic Assembly
Low Forward Voltage Drop, High Efficiency
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Low Power Loss
Ultra-Fast Recovery Time
Plastic Case Material has UL Flammability
SMC/DO-214AB
B
Classification Rating 94V-O
Dim
A
Mechanical Data
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A
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Case: SMC/DO-214AB, Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
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Marking: Type Number
Weight: 0.21 grams (approx.)
C
D
J
G
E
H
Maximum Ratings and Electrical Characteristics
Min
Max
5.59
6.22
B
6.60
7.11
C
2.75
3.18
D
0.15
0.31
E
7.75
8.13
G
0.10
0.20
H
0.76
1.52
J
2.00
2.62
All Dimensions in mm
TA = 25C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol HFM5 01 HFM5 02
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
HFM5 05
HFM5 06
HFM5 07
HFM5 08
Unit
VRRM
VRWM
VR
50
100
200
300
400
600
800
1000
V
VR(RMS)
35
70
140
210
280
420
560
700
V
IO
5.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
100
A
Forward Voltage
@IF = 5.0A
VFM
@TA = 25°C
@TA = 100°C
IRM
Peak Reverse Current
At Rated DC Blocking Voltage
@TL = 55°C
HFM5 03 HFM5 04
Reverse Recovery Time (Note 1)
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
j
R
1.7
10
300
trr
Typical Junction Capacitance (Note 2)
1.4
1.0
C
JL
Tj, TSTG
V
µA
50
75
nS
15
12
pF
15
°C/W
-50 to +150
°C
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. P.C.B. mounted with 0.2x0.2”
(5.0x5.0mm) copper pad areas
1 of 2
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RATINGS AND CHARACTERISTIC CURVES HFM501 THRU HFM508
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www.sunmate.tw
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