Fairchild HGT1N40N60A4 600v, smps series n-channel igbt with anti-parallel hyperfast diode Datasheet

HGT1N40N60A4D
Data Sheet
December 2001
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
The HGT1N40N60A4D is a MOS gated high voltage
switching device combining the best features of a MOSFET
and a bipolar transistor. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC. This
IGBT is ideal for many high voltage switching applications
operating at high frequencies where low conduction losses
are essential. This device has been optimized for high
frequency switch mode power supplies.
Features
• 100kHz Operation At 390V, 22A
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . . . 55ns at TJ = 125oC
• Low Conduction Loss
Symbol
C
G
Formerly Developmental Type TA49349.
Ordering Information
PART NUMBER
HGT1N40N60A4D
E
PACKAGE
SOT-227
BRAND
40N60A4D
Packaging
NOTE: When ordering, use the entire part number.
JEDEC STYLE SOT-227B
GATE
EMITTER
TAB
(ISOLATED)
COLLECTOR
EMITTER
Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
©2001 Fairchild Semiconductor Corporation
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
HGT1N40N60A4D Rev. B
HGT1N40N60A4D
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Noted
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM
Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS Isolation Voltage, Any Terminal To Case, t = 2s . . . . . . . . . . . . . . . . . . . . . . . . . . .VISOL
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Baseplate Screw Torque 4mm Metric Screw Size . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Terminal Screw Torque 4mm Metric Screw Size . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
HGT1N40N60A4D
600
UNITS
V
110
45
300
±20
±30
200A at 600V
298
2.3
2500
-55 to 150
1.5
1.7
A
A
A
V
V
W
W/oC
V
oC
N-m
N-m
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications
TJ = 25oC, Unless Otherwise Specified
PARAMETER
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
SYMBOL
BVCES
ICES
VCE(SAT)
VGE(TH)
IGES
TEST CONDITIONS
IC = 250µA, VGE = 0V
VCE = BVCES
IC = 40A,
VGE = 15V
-
-
V
-
250
µA
TJ = 125oC
-
-
3.0
mA
TJ = 25oC
-
1.7
2.7
V
-
1.5
2.0
V
4.5
5.6
7
V
TJ = 125oC
IC = 250µA, VCE = VGE
VGE = ±20V
-
-
±250
nA
200
-
-
A
IC = 40A, VCE = 0.5 BVCES
-
8.5
-
V
IC = 40A,
VCE = 0.5 BVCES
VGE = 15V
-
350
405
nC
VGE = 20V
-
450
520
nC
-
25
-
ns
-
18
-
ns
-
145
-
ns
-
35
-
ns
-
400
-
µJ
-
850
-
µJ
-
370
-
µJ
-
27
-
ns
Gate to Emitter Plateau Voltage
VGEP
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
td(ON)I
trI
td(OFF)I
tfI
Turn-On Energy (Note 3)
EON1
Turn-On Energy (Note 3)
EON2
Turn-Off Energy (Note 2)
EOFF
Current Turn-On Delay Time
td(ON)I
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
trI
td(OFF)I
tfI
UNITS
-
TJ = 150oC, RG = 2.2Ω, VGE = 15V
L = 100µH, VCE = 600V
Current Turn-On Delay Time
MAX
600
SSOA
Qg(ON)
TYP
TJ = 25oC
Switching SOA
On-State Gate Charge
MIN
IGBT and Diode at TJ = 25oC
ICE = 40A
VCE = 0.65 BVCES
VGE =15V
RG = 2.2Ω
L = 200µH
Test Circuit (Figure 24)
IGBT and Diode at TJ = 125oC
ICE = 40A
VCE = 0.65 BVCES
VGE = 15V
RG= 2.2Ω
L = 200µH
Test Circuit (Figure 24)
-
20
-
ns
-
185
225
ns
-
55
95
ns
-
400
-
µJ
Turn-On Energy (Note3)
EON1
Turn-On Energy (Note 3)
EON2
-
1220
1400
µJ
Turn-Off Energy (Note 2)
EOFF
-
660
775
µJ
Diode Forward Voltage
VEC
-
2.25
2.7
V
©2001 Fairchild Semiconductor Corporation
IEC = 40A
HGT1N40N60A4D Rev. B
HGT1N40N60A4D
Electrical Specifications
TJ = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
Diode Reverse Recovery Time
trr
Thermal Resistance Junction To Case
RθJC
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IEC = 40A, dIEC/dt = 200A/µs
-
48
55
ns
IGBT
-
-
0.42
oC/W
Diode
-
-
1.8
oC/W
NOTES:
2. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the
turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 20.
(Unless Otherwise Specified)
120
ICE , DC COLLECTOR CURRENT (A)
VGE = 15V
TJ = 150oC
100
80
60
40
20
0
25
ICE, COLLECTOR TO EMITTER CURRENT (A)
Typical Performance Curves
225
175
150
125
100
75
50
25
0
50
75
100
125
TJ = 150oC, RG = 2.2Ω, VGE = 15V, L = 100µH
200
150
0
TC , CASE TEMPERATURE (oC)
100
200
300
400
500
600
700
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
VGE
15V
100
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 0.42oC/W, SEE NOTES
10
1
10
20
100
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
©2001 Fairchild Semiconductor Corporation
12
1200
VCE = 390V, RG = 2.2Ω, TJ = 125oC
10
1000
ISC
8
800
6
600
tSC
4
400
2
10
11
12
13
14
15
16
200
ISC, PEAK SHORT CIRCUIT CURRENT (A)
TC
75oC
tSC , SHORT CIRCUIT WITHSTAND TIME (ms)
fMAX, OPERATING FREQUENCY (kHz)
300
VGE , GATE TO EMITTER VOLTAGE (V)
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
HGT1N40N60A4D Rev. B
HGT1N40N60A4D
(Unless Otherwise Specified) (Continued)
80
DUTY CYCLE < 0.5%, VGE = 12V
PULSE DURATION = 250ms
70
60
50
TJ = 125oC
40
30
TJ = 25oC
20
TJ = 150oC
10
0
0
0.25
0.5
0.75
1.0
1.25
1.5
1.75
2.0
2.25
2.5
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
Typical Performance Curves
80
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250ms
70
60
50
40
TJ = 125oC
30
20
10
0
0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
EOFF , TURN-OFF ENERGY LOSS (mJ)
EON2 , TURN-ON ENERGY LOSS (mJ)
4500
TJ = 125oC, VGE = 12V, VGE = 15V
3500
3000
2500
2000
1500
1000
TJ = 25oC, VGE = 12V, VGE = 15V
500
10
20
30
40
50
60
70
2.25
2.5
800
600
400
TJ = 25oC, VGE = 12V OR 15V
200
0
0
10
20
30
40
50
60
70
80
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
120
TJ = 25oC, TJ = 125oC, VGE = 15V
RG = 2.2Ω, L = 200mH, VCE = 390V
100
trI , RISE TIME (ns)
td(ON)I, TURN-ON DELAY TIME (ns)
2.0
ICE , COLLECTOR TO EMITTER CURRENT (A)
36
34
32
30
28
26
TJ = 125oC, TJ = 25oC, VGE = 12V
80
60
40
20
24
22
1.75
1000
RG = 2.2Ω, L = 200mH, VCE = 390V
38
1.5
TJ = 125oC, VGE = 12V OR 15V
1200
80
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
40
1.25
RG = 2.2Ω, L = 200mH, VCE = 390V
ICE , COLLECTOR TO EMITTER CURRENT (A)
42
1.0
1400
0
0
0.75
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
1600
4000
0.5
1800
RG = 2.2Ω, L = 200mH, VCE = 390V
5000
0.25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
5500
TJ = 25oC
TJ = 150oC
TJ = 25oC, TJ = 125oC, VGE = 15V
0
10
20
30
40
50
60
70
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
©2001 Fairchild Semiconductor Corporation
80
TJ = 25oC, TJ = 125oC, VGE = 15V
0
0
10
20
30
40
50
60
70
80
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
HGT1N40N60A4D Rev. B
HGT1N40N60A4D
Typical Performance Curves
(Unless Otherwise Specified) (Continued)
70
RG = 2.2Ω, L = 200mH, VCE = 390V
65
180
tfI , FALL TIME (ns)
td(OFF)I , TURN-OFF DELAY TIME (ns)
190
170
VGE = 12V, VGE = 15V, TJ = 125oC
160
150
TJ = 125oC, VGE = 12V OR 15V
60
55
50
45
40
VGE = 12V or 15V, TJ = 25oC
140
TJ = 25oC, VGE = 12V OR 15V
35
RG = 2.2Ω, L = 200mH, VCE = 390V
130
30
0
10
20
30
50
40
60
70
80
0
10
ICE , COLLECTOR TO EMITTER CURRENT (A)
400
16
DUTY CYCLE < 0.5%, VCE = 10V
PULSE DURATION = 250ms
300
250
200
TJ = -55oC
150
TJ = 125oC
TJ = 25oC
100
50
0
6
7
8
9
10
12
ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ)
ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ)
ICE = 80A
3
2
ICE = 40A
1
ICE = 20A
100
125
150
TC , CASE TEMPERATURE (oC)
FIGURE 15. TOTAL SWITCHING LOSS vs CASE TEMPERATURE
©2001 Fairchild Semiconductor Corporation
80
VCE = 400V
8
VCE = 200V
6
4
2
0
50
100
150
200
250
300
350
400
FIGURE 14. GATE CHARGE WAVEFORMS
ETOTAL = EON2 +EOFF
75
70
QG , GATE CHARGE (nC)
TJ = 125oC, VCE = 390V, VGE = 15V
50
60
VCE = 600V
10
0
11
5
25
50
14
FIGURE 13. TRANSFER CHARACTERISTIC
0
40
IG(REF) = 1mA, RL = 7.5Ω, TC = 25oC
VGE, GATE TO EMITTER VOLTAGE (V)
4
30
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
VGE, GATE TO EMITTER VOLTAGE (V)
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
350
20
ICE , COLLECTOR TO EMITTER CURRENT (A)
70
TJ = 125oC, VCE = 390V, VGE = 15V
ETOTAL = EON2 +EOFF
10
ICE = 80A
ICE = 40A
1
ICE = 20A
0.1
1
10
100
500
RG, GATE RESISTANCE (Ω)
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
HGT1N40N60A4D Rev. B
HGT1N40N60A4D
14
(Unless Otherwise Specified) (Continued)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Typical Performance Curves
FREQUENCY = 1MHz
C, CAPACITANCE (nF)
12
10
8
CIES
6
4
COES
2
CRES
0
0
10
20
30
40
50
60
70
80
90
2.4
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250ms, TJ = 25oC
2.3
2.2
ICE = 80A
2.1
ICE = 40A
2.0
ICE = 20A
1.9
100
8
9
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
12
13
14
15
16
120
DUTY CYCLE < 0.5%,
PULSE DURATION = 250ms
40
35
TJ = 125oC
30
25
20
TJ = 25oC
15
10
100
80
70
60
40
2.5
2.0
25oC ta
20
0
1.5
25oC trr
30
10
1.0
25oC tb
0
5
10
60
IF = 40A, VCE = 390V
125oC ta
55
50
45
125oC tb
40
35
30
25
25oC ta
20
25oC tb
15
10
200
300
400
500
600
700
800
900
diEC/dt, RATE OF CHANGE OF CURRENT (A/µs)
FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF
CURRENT
©2001 Fairchild Semiconductor Corporation
20
25
30
35
40
FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT
1000
Qrr , REVERSE RECOVERY CHARGE (nC)
FIGURE 19. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
65
15
IEC , FORWARD CURRENT (A)
VEC , FORWARD VOLTAGE (V)
70
125oC tb
125oC ta
50
0
0.5
125oC trr
90
5
0
dIEC/dt = 200A/µs
110
trr , RECOVERY TIMES (ns)
45
trr , RECOVERY TIMES (ns)
11
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
50
IEC , FORWARD CURRENT (A)
10
VGE, GATE TO EMITTER VOLTAGE (V)
1400
1200
VCE = 390V
125oC, IF = 40A
1000
125oC, IF = 20A
800
600
25oC, IF = 40A
400
25oC, IF = 20A
200
0
200
400
600
800
1000
diEC/dt, RATE OF CHANGE OF CURRENT (A/µs)
FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF
CURRENT
HGT1N40N60A4D Rev. B
HGT1N40N60A4D
ZθJC , NORMALIZED THERMAL RESPONSE
Typical Performance Curves
(Unless Otherwise Specified) (Continued)
100
0.50
0.20
10-1
0.10
0.05
t1
0.02
0.01
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
SINGLE PULSE
10-2
10-5
10-4
10-3
10-2
10-1
PD
t2
100
101
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 23. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
Test Circuit and Waveforms
HGT1N40N60A4D
90%
10%
VGE
EON2
EOFF
L = 100µH
VCE
RG = 2.2Ω
90%
ICE
+
HGT1N40N60A4D
-
VDD = 390V
FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT
©2001 Fairchild Semiconductor Corporation
10%
td(OFF)I
tfI
trI
td(ON)I
FIGURE 25. SWITCHING TEST WAVEFORMS
HGT1N40N60A4D Rev. B
HGT1N40N60A4D
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows fMAX1 or fMAX2; whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of VGEM. Exceeding the rated VGE can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to
voltage buildup on the input capacitor due to leakage
currents or pickup.
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. td(OFF)I and td(ON)I are defined in Figure 21.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJM. td(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The
allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC.
The sum of device switching and conduction losses must
not exceed PD . A 50% duty factor was used (Figure 3) and
the conduction losses (PC) are approximated by
PC = (VCE x ICE)/2.
EON2 and EOFF are defined in the switching waveforms
shown in Figure 21. EON2 is the integral of the instantaneous
power loss (ICE x VCE) during turn-on and EOFF is the
integral of the instantaneous power loss (ICE x VCE) during
turn-off. All tail losses are included in the calculation for
EOFF; i.e., the collector current equals zero (ICE = 0).
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
©2001 Fairchild Semiconductor Corporation
HGT1N40N60A4D Rev. B
HGT1N40N60A4D
SOT-227B
ISOTOP PACKAGE
o
R3.97
J
K
A
B
INCHES
P
D
I
C
M N
S
E
L
MILLIMETERS
SYMBOL
MIN
MAX
MIN
MAX
NOTES
A
1.240
1.255
31.50
31.88
-
B
0.310
0.322
7.87
8.18
-
C
0.163
0.169
4.14
4.29
-
D
0.163
0.169
4.14
4.29
-
E
0.165
0.169
4.19
4.29
-
F
0.588
0.594
14.99
15.09
-
G
1.186
1.192
30.12
30.28
-
H
1.494
1.504
37.95
38.20
-
F
I
0.976
0.986
24.79
25.04
-
G
J
0.472
0.480
11.99
12.19
-
H
K
0.372
0.378
9.45
9.60
-
L
0.030
0.033
0.76
0.84
-
Q
M
0.495
0.506
12.57
12.85
-
N
0.990
1.000
25.15
25.40
-
O
R
O
0.080
0.084
2.03
2.13
-
P
0.108
0.124
2.74
3.15
-
Q
1.049
1.059
26.64
26.90
-
R
0.164
0.174
4.16
4.42
-
S
0.186
0.191
4.72
4.85
Rev. 0 8/00
©2001 Fairchild Semiconductor Corporation
HGT1N40N60A4D Rev. B
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST 
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench 
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER 
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET 
VCX™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into
support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4