HGTP7N60C3D, HGT1S7N60C3D, HGT1S7N60C3DS S E M I C O N D U C T O R 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes January 1997 Features Packaging JEDEC TO-220AB • 14A, 600V at TC = 25oC • • • • • EMITTER COLLECTOR GATE 600V Switching SOA Capability Typical Fall Time . . . . . . . . . . . . . . 140ns at TJ = 150oC Short Circuit Rating Low Conduction Loss Hyperfast Anti-Parallel Diode COLLECTOR (FLANGE) Description JEDEC TO-262AA The HGTP7N60C3D, HGT1S7N60C3D and HGT1S7N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is developmental type TA49115. The diode used in anti-parallel with the IGBT is developmental type TA49057. EMITTER COLLECTOR GATE A COLLECTOR (FLANGE) JEDEC TO-263AB M A A The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors COLLECTOR (FLANGE) GATE EMITTER PACKAGING AVAILABILITY PART NUMBER PACKAGE Terminal Diagram BRAND HGTP7N60C3D TO-220AB G7N60C3D HGT1S7N60C3D TO-262AA G7N60C3D HGT1S7N60C3DS TO-263AB G7N60C3D N-CHANNEL ENHANCEMENT MODE C NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, i.e. HGT1S7N60C3DS9A. G Formerly Developmental Type TA49121. E Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Average Diode Forward Current at 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I(AVG) Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate-Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate-Emitter Voltage Pulsed. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC, Figure 14 . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . .tSC Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . .tSC HGTP7N60C3D, HGT1S7N60C3D HGT1S7N60C3DS 600 14 7 8 56 ±20 ±30 40A at 480V 60 0.487 -40 to 150 260 1 8 UNITS V A A A A V V W W/oC oC oC µs µs NOTE: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RGE = 50Ω. CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1997 3-22 File Number 4150.1 HGTP7N60C3D, HGT1S7N60C3D, HGT1S7N60C3DS Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage IC = 250µA, VGE = 0V BVCES Collector-Emitter Leakage Current TEST CONDITIONS ICES VCE(SAT) MAX UNITS 600 - - V TC = 25oC - - 250 µA VCE = BVCES TC = 150oC - - 2.0 mA IC = IC110, VGE = 15V TC = 25oC - 1.6 2.0 V TC = 150oC - 1.9 2.4 V TC = 25oC 3.0 5.0 6.0 V - - ±250 nA VCE(PK) = 480V 40 - - A VCE(PK) = 600V 6 - - A IC = IC110, VCE = 0.5 BVCES - 8 - V IC = IC110, VCE = 0.5 BVCES VGE = 15V - 23 30 nC VGE = 20V - 30 38 nC - 8.5 - ns - 11.5 - ns - 350 400 ns - 140 275 ns IC = 250µA, VCE = VGE IGES VGE = ±25V SSOA TJ = 150oC RG = 50Ω VGE = 15V Switching SOA TYP VCE = BVCES VGE(TH) Gate-Emitter Leakage Current MIN L = 1mH Gate-Emitter Plateau Voltage On-State Gate Charge VGEP QG(ON) Current Turn-On Delay Time tD(ON)I Current Rise Time tRI Current Turn-Off Delay Time tD(OFF)I TJ = 150oC ICE = IC110 VCE(PK) = 0.8 BVCES VGE = 15V RG = 50Ω L = 1mH Current Fall Time tFI Turn-On Energy EON - 165 - µJ Turn-Off Energy (Note 3) EOFF - 600 - µJ Diode Forward Voltage VEC IEC = 7A - 1.9 2.5 V IEC = 7A, dIEC/dt = 200A/µs - 25 35 ns IEC = 1A, dIEC/dt = 200A/µs - 18 30 ns Diode Reverse Recovery Time trr Thermal Resistance RθJC IGBT - - 2.1 oC/W Diode - - 2.0 oC/W NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). The HGTP7N60C3D, HGT1S7N60C3D, and HGT1S7N60C3DS were tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include diode losses. HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641 4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 3-23 HGTP7N60C3D, HGT1S7N60C3D, HGT1S7N60C3DS Typical Performance Curves DUTY CYCLE <0.5%, VCE = 10V PULSE DURATION = 250µs 30 25 TC = 150oC 20 TC = 25oC 15 TC = -40oC 10 5 0 4 6 8 PULSE DURATION = 250µs, DUTY CYCLE <0.5%, 35 TC = 25oC 10 12 25 VGE = 15.0V 20 8.5V 10 8.0V 0 ICE, COLLECTOR-EMITTER CURRENT (A) ICE, COLLECTOR-EMITTER CURRENT (A) TC = 150oC TC = 25oC 5 0 1 2 3 4 40 35 20 6 3 100 125 TC = 150oC 15 10 5 0 tSC , SHORT CIRCUIT WITHSTAND TIME (µS) ICE , DC COLLECTOR CURRENT (A) 9 75 TC = 25oC TC = -40oC 0 1 2 3 4 5 FIGURE 4. COLLECTOR-EMITTER ON - STATE VOLTAGE 12 50 10 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VGE = 15V 25 8 25 5 FIGURE 3. COLLECTOR-EMITTER ON - STATE VOLTAGE 0 6 PULSE DURATION = 250µs DUTY CYCLE <0.5%, VGE = 15V 30 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 15 4 FIGURE 2. SATURATION CHARACTERISTICS 20 0 2 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) TC = -40oC 10 7.0V 0 30 15 7.5V 5 14 PULSE DURATION = 250µs DUTY CYCLE <0.5%, VGE = 10V 25 9.0V 15 FIGURE 1. TRANSFER CHARACTERISTICS 35 10.0V 30 VGE, GATE-TO-EMITTER VOLTAGE (V) 40 12.0V 150 TC , CASE TEMPERATURE (oC) 12 140 VCE = 360V, RGE = 50Ω, TJ = 125oC 10 120 ISC 8 100 6 80 4 60 tSC 2 10 13 11 12 14 VGE , GATE-TO-EMITTER VOLTAGE (V) 40 15 FIGURE 6. SHORT CIRCUIT WITHSTAND TIME FIGURE 5. MAXIMUM DC COLLECTOR CURRENT AS A FUNCTION OF CASE TEMPERATURE 3-24 ISC, PEAK SHORT CIRCUIT CURRENT (A) 35 40 ICE, COLLECTOR-EMITTER CURRENT (A) ICE, COLLECTOR-EMITTER CURRENT (A) 40 HGTP7N60C3D, HGT1S7N60C3D, HGT1S7N60C3DS Typical Performance Curves (Continued) 500 TJ = 150oC, RG = 50Ω, L = 1mH, VCE(PK) = 480V 40 tD(OFF)I , TURN-OFF DELAY TIME (ns) tD(ON)I , TURN-ON DELAY TIME (ns) 50 30 20 VGE = 10V VGE = 15V 10 5 2 8 5 11 14 17 450 400 350 VGE = 10V or 15V 300 250 200 20 TJ = 150oC, RG = 50Ω, L = 1mH, VCE(PK) = 480V 8 11 14 17 5 ICE , COLLECTOR-EMITTER CURRENT (A) 2 ICE , COLLECTOR-EMITTER CURRENT (A) FIGURE 7. TURN-ON DELAY TIME AS A FUNCTION OF COLLECTOR-EMITTER CURRENT FIGURE 8. TURN-OFF DELAY TIME AS A FUNCTION OF COLLECTOR-EMITTER CURRENT 300 TJ = 150oC, RG = 50Ω, L = 1mH, VCE(PK) = 480V VGE = 15V 200 VGE = 10V or 15V 150 10 100 2 5 2 17 5 14 8 11 ICE , COLLECTOR-EMITTER CURRENT (A) 20 2000 3000 EOFF , TURN-OFF ENERGY LOSS (µJ) VGE = 10V 500 VGE = 15V 100 40 2 5 17 14 8 11 ICE , COLLECTOR-EMITTER CURRENT (A) FIGURE 11. TURN-ON ENERGY LOSS AS A FUNCTION OF COLLECTOR-EMITTER CURRENT 8 11 14 17 20 FIGURE 10. TURN-OFF FALL TIME AS A FUNCTION OF COLLECTOR-EMITTER CURRENT TJ = 150oC, RG = 50Ω, L = 1mH, VCE(PK) = 480V 1000 5 ICE , COLLECTOR-EMITTER CURRENT (A) FIGURE 9. TURN-ON RISE TIME AS A FUNCTION OF COLLECTOR-EMITTER CURRENT EON , TURN-ON ENERGY LOSS (µJ) TJ = 150oC, RG = 50Ω, L = 1mH, VCE(PK) = 480V 250 VGE = 10V 100 tFI , FALL TIME (ns) tRI , TURN-ON RISE TIME (ns) 200 20 1000 VGE = 10V or 15V 500 100 20 TJ = 150oC, RG = 50Ω, L = 1mH, VCE(PK) = 480V 2 17 8 11 5 14 ICE , COLLECTOR-EMITTER CURRENT (A) FIGURE 12. TURN-OFF ENERGY LOSS AS A FUNCTION OF COLLECTOR-EMITTER CURRENT 3-25 20 HGTP7N60C3D, HGT1S7N60C3D, HGT1S7N60C3DS 50 200 TJ = 150oC, TC = 75oC RG = 50Ω, L = 1mH 100 ICE, COLLECTOR-EMITTER CURRENT (A) fMAX , OPERATING FREQUENCY (kHz) (Continued) VGE = 15V VGE = 10V 10 fMAX1 = 0.05/(tD(OFF)I + tD(ON)I) fMAX2 = (PD - PC)/(EON + EOFF) PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RθJC = 2.1oC/W 1 2 10 20 30 TJ = 150oC, VGE = 15V, RG = 50Ω, L = 1mH 40 30 20 10 0 0 ICE, COLLECTOR-EMITTER CURRENT (A) 800 600 400 200 COES 0 0 5 10 15 20 25 VCE , COLLECTOR - EMITTER VOLTAGE (V) C, CAPACITANCE (pF) CIES CRES VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 400 500 600 IG REF = 1.044mA, RL = 50Ω, TC = 25oC 600 15 12.5 500 400 VCE = 200V VCE = 400V 300 VCE = 600V 10 7.5 200 5 100 2.5 0 0 5 10 15 20 25 0 30 QG , GATE CHARGE (nC) FIGURE 15. CAPACITANCE AS A FUNCTION OF COLLECTOREMITTER VOLTAGE ZθJC , NORMALIZED THERMAL RESPONSE 300 FIGURE 14. MINIMUM SWITCHING SAFE OPERATING AREA FREQUENCY = 1MHz 1000 200 VCE(PK), COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 13. OPERATING FREQUENCY AS A FUNCTION OF COLLECTOR-EMITTER CURRENT 1200 100 FIGURE 16. GATE CHARGE WAVEFORMS 100 0.5 t1 0.2 PD 10-1 0.1 t2 0.05 0.02 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC 0.01 SINGLE PULSE 10-2 -5 10 10-4 10-2 10-1 10-3 t1 , RECTANGULAR PULSE DURATION (s) 100 FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE 3-26 101 VGE, GATE-EMITTER VOLTAGE (V) Typical Performance Curves HGTP7N60C3D, HGT1S7N60C3D, HGT1S7N60C3DS Typical Performance Curves (Continued) 30 tR , RECOVERY TIMES (ns) IEC , FORWARD CURRENT (A) 30 10 175oC 100oC 25oC 1.0 TC = 25oC, dIEC/dt = 200A/µs 25 trr 20 15 tA 10 tB 5 0.5 0 0.5 1.0 1.5 2.5 2.0 0 0.5 3.0 VEC , FORWARD VOLTAGE (V) FIGURE 18. DIODE FORWARD CURRENT AS A FUNCTION OF FORWARD VOLTAGE DROP 1 3 7 IEC , FORWARD CURRENT (A) FIGURE 19. RECOVERY TIMES AS A FUNCTION OF FORWARD CURRENT Test Circuit and Waveform L = 1mH 90% RHRD660 10% VGE EOFF RG = 50Ω EON VCE + - 90% VDD = 480V ICE 10% tD(OFF)I tRI tFI tD(ON)I FIGURE 21. SWITCHING TEST WAVEFORMS FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT 3-27 HGTP7N60C3D, HGT1S7N60C3D, HGT1S7N60C3DS Operating Frequency Information Handling Precautions for IGBTs Operating frequency information for a typical device (Figure 13) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 4, 7, 8, 11 and 12. The operating frequency plot (Figure 13) of a typical device shows fMAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: fMAX1 is defined by fMAX1 = 0.05/(tD(OFF)I + tD(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on- state time for a 50% duty factor. Other definitions are possible. tD(OFF)I and tD(ON)I are defined in Figure 21. 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as ECCOSORBD LD26 or equivalent. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJMAX. tD(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJMAX TC)/RθJC. The sum of device switching and conduction losses must not exceed PD . A 50% duty factor was used (Figure 13) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. ECCOSORBD LD26 is a Trademark of Emerson and Cumming, Inc. EON and EOFF are defined in the switching waveforms shown in Figure 21. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss during turn-off. All tail losses are included in the calculation for EOFF; i.e. the collector current equals zero (ICE = 0). 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic zener diode from gate to emitter. If gate protection is required an external zener is recommended. All Harris Semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Harris Semiconductor products are sold by description only. Harris Semiconductor reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Harris is believed to be accurate and reliable. However, no responsibility is assumed by Harris or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Harris or its subsidiaries. Sales Office Headquarters For general information regarding Harris Semiconductor and its products, call 1-800-4-HARRIS NORTH AMERICA Harris Semiconductor P. O. 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