Fairchild HGT4E20N60A4DS 600v, smps series n-channel igbt with anti-parallel hyperfast diode Datasheet

HGTG20N60A4D, HGT4E20N60A4DS
Data Sheet
APRIL 2002
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
This family of MOS gated high voltage switching devices
combine the best features of MOSFETs and bipolar
transistors. These devices have the high input impedance of
a MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25oC and 150oC. The IGBT used is the
development type TA49339. The diode used in anti-parallel
is the development type TA49372.
These IGBT’s are ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. These devices have been
optimized for high frequency switch mode power
supplies.
Features
• >100kHz Operation At 390V, 20A
• 200kHz Operation At 390V, 12A
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . . .55ns at T J = 125 oC
• Low Conduction Loss
• Temperature Compensating SABER™ Model
www.fairchildsemi.com
Packaging
JEDEC STYLE TO-247
E
C
G
Formerly Developmental Type TA49341.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG20N60A4D
TO-247
20N60A4D
HGT4E20N60A4DS
TO-268
20N60A4DS
TO-268AA
NOTE: When ordering, use the entire part number.
Symbol
C
C
G
G
E
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
©2002 Fairchild Semiconductor Corporation
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
HGTG20N60A4D, HGT4E20N60A4DS Rev. C
HGTG20N60A4D, HGT4E20N60A4DS
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
HGTG20N60A4D,
HGT4E20N60A4DS
600
UNITS
V
70
40
280
±20
±30
100A at 600V
290
2.32
-55 to 150
260
A
A
A
V
V
W
W/oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications
TJ = 25oC, Unless Otherwise Specified
PARAMETER
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 3)
SYMBOL
BVCES
ICES
VCE(SAT)
VGE(TH)
IGES
TEST CONDITIONS
IC = 250µA, VGE = 0V
VCE = 600V
IC = 20A,
VGE = 15V
MIN
TYP
MAX
UNITS
600
-
-
V
TJ = 25oC
-
-
250
µA
TJ = 125oC
-
-
3.0
mA
TJ = 25oC
-
1.8
2.7
V
TJ = 125oC
IC = 250µA, VCE = 600V
VGE = ±20V
-
1.6
2.0
V
4.5
5.5
7.0
V
-
-
±250
nA
100
-
-
A
SSOA
TJ = 150oC, RG = 3Ω, VGE = 15V,
L = 100µH, VCE = 600V
VGEP
IC = 20A, VCE = 300V
-
8.6
-
V
IC = 20A,
VCE = 300V
VGE = 15V
-
142
162
nC
VGE = 20V
-
182
210
nC
-
15
-
ns
-
12
-
ns
-
73
-
ns
-
32
-
ns
-
105
-
µJ
Qg(ON)
td(ON)I
trI
td(OFF)I
tfI
EON1
IGBT and Diode at TJ = 25oC,
ICE = 20A,
VCE = 390V,
VGE = 15V,
RG = 3Ω,
L = 500µH,
Test Circuit Figure 24
Turn-On Energy (Note 3)
EON2
-
280
350
µJ
Turn-Off Energy (Note 2)
EOFF
-
150
200
µJ
-
15
21
ns
-
13
18
ns
-
105
135
ns
-
55
73
ns
EON1
-
115
-
µJ
Turn-On Energy (Note 3)
EON2
-
510
600
µJ
Turn-Off Energy (Note 2)
EOFF
-
330
500
µJ
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 3)
©2002 Fairchild Semiconductor Corporation
td(ON)I
trI
td(OFF)I
tfI
IGBT and Diode at TJ = 125oC,
ICE = 20A,
VCE = 390V, VGE = 15V,
RG = 3Ω,
L = 500µH,
Test Circuit Figure 24
HGTG20N60A4D, HGT4E20N60A4DS Rev. C
HGTG20N60A4D, HGT4E20N60A4DS
Electrical Specifications
TJ = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
Diode Forward Voltage
TEST CONDITIONS
VEC
Diode Reverse Recovery Time
trr
Thermal Resistance Junction To Case
RθJC
MIN
TYP
MAX
UNITS
IEC = 20A
-
2.3
-
V
IEC = 20A, dIEC/dt = 200A/µs
-
35
-
ns
IEC = 1A, dIEC/dt = 200A/µs
-
26
-
ns
IGBT
-
-
0.43
oC/W
Diode
-
-
1.9
oC/W
NOTE:
2. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. E ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 20.
Unless Otherwise Specified
DIE CAPABILITY
VGE = 15V
80
PACKAGE LIMIT
60
40
20
0
25
50
75
100
125
150
120
TJ = 150oC, RG = 3Ω, VGE = 15V, L = 100µH
100
80
60
40
20
0
0
100
TC , CASE TEMPERATURE (oC)
fMAX, OPERATING FREQUENCY (kHz)
500
TC
VGE
75oC
15V
300
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
100 fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 0.43oC/W, SEE NOTES
TJ = 125oC, RG = 3Ω, L = 500µH, V CE = 390V
5
10
20
30
40
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
©2002 Fairchild Semiconductor Corporation
300
400
500
700
600
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
50
tSC , SHORT CIRCUIT WITHSTAND TIME (µs)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
40
200
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
14
VCE = 390V, RG = 3Ω, TJ = 125oC
12
450
400
ISC
10
350
8
300
6
250
4
200
tSC
2
0
150
10
11
12
13
14
100
15
ISC, PEAK SHORT CIRCUIT CURRENT (A)
ICE , DC COLLECTOR CURRENT (A)
100
ICE, COLLECTOR TO EMITTER CURRENT (A)
Typical Performance Curves
VGE , GATE TO EMITTER VOLTAGE (V)
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
HGTG20N60A4D, HGT4E20N60A4DS Rev. C
HGTG20N60A4D, HGT4E20N60A4DS
100
Unless Otherwise Specified (Continued)
DUTY CYCLE < 0.5%, VGE = 12V
PULSE DURATION = 250µs
80
60
40
TJ = 125oC
20
TJ = 25 oC
TJ = 150oC
0
0.4
0
0.8
1.2
1.6
2.0
2.4
2.8
3.2
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
Typical Performance Curves
100
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250µs
80
60
40
TJ = 125oC
20
TJ = 150oC
0
0
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
1.2
1.6
2.0
2.4
2.8
800
RG = 3Ω, L = 500µH, VCE = 390V
EOFF, TURN-OFF ENERGY LOSS (µJ)
EON2 , TURN-ON ENERGY LOSS (µJ)
0.8
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
1400
1200
1000
TJ = 125oC, VGE = 12V, VGE = 15V
800
600
400
200
TJ = 25oC, VGE = 12V, VGE = 15V
0
5
RG = 3Ω, L = 500µH, VCE = 390V
700
600
500
TJ = 125oC, VGE = 12V OR 15V
400
300
200
TJ = 25oC, VGE = 12V OR 15V
100
0
10
15
20
25
30
35
ICE , COLLECTOR TO EMITTER CURRENT (A)
5
40
10
15
20
25
30
35
40
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
36
22
RG = 3Ω, L = 500µH, VCE = 390V
RG = 3Ω, L = 500µH, VCE = 390V
32
20
TJ = 25 oC, TJ = 125oC, VGE = 12V
trI , RISE TIME (ns)
td(ON)I, TURN-ON DELAY TIME (ns)
0.4
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
18
16
14
12
TJ = 25oC, TJ = 125oC, VGE = 15V
10
8
TJ = 25oC
TJ = 25oC, TJ = 125oC, VGE = 12V
28
24
20
16
12
TJ = 25oC OR TJ = 125oC, VGE = 15V
8
4
5
10
15
20
25
30
35
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
©2002 Fairchild Semiconductor Corporation
40
5
10
15
20
25
30
35
40
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
HGTG20N60A4D, HGT4E20N60A4DS Rev. C
HGTG20N60A4D, HGT4E20N60A4DS
Typical Performance Curves
Unless Otherwise Specified (Continued)
80
RG = 3Ω, L = 500µH, VCE = 390V
RG = 3Ω, L = 500µH, VCE = 390V
72
110
VGE = 12V, VGE = 15V, TJ = 125oC
tfI , FALL TIME (ns)
td(OFF)I , TURN-OFF DELAY TIME (ns)
120
100
90
80
TJ = 125oC, VGE = 12V OR 15V
56
48
TJ = 25oC, VGE = 12V OR 15V
40
32
VGE = 12V, VGE = 15V, TJ = 25 oC
70
60
64
24
5
10
15
20
25
30
35
16
40
5
10
ICE , COLLECTOR TO EMITTER CURRENT (A)
16
240
DUTY CYCLE < 0.5%, VCE = 10V
PULSE DURATION = 250µs
160
120
TJ = 25 oC
80
TJ = 125oC
TJ = -55oC
40
30
35
40
IIG(REF)
1mA,RRLL==15Ω,
15Ω,TTJJ==25
25ooCC
G(REF)==1mA,
14
12
VCE = 600V
VCE = 400V
10
8
VCE = 200V
6
4
2
7
8
9
11
10
0
12
20
40
1.8
RG = 3Ω, L = 500µH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
1.4
1.2
I CE = 30A
0.8
I CE = 20A
0.6
0.4
I CE = 10A
0.2
0
25
50
75
100
125
TC , CASE TEMPERATURE (oC)
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
©2002 Fairchild Semiconductor Corporation
80
100
120
140
160
FIGURE 14. GATE CHARGE WAVEFORMS
150
ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ)
FIGURE 13. TRANSFER CHARACTERISTIC
1.0
60
QG , GATE CHARGE (nC)
VGE, GATE TO EMITTER VOLTAGE (V)
ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ)
25
0
0
6
1.6
20
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
VGE, GATE TO EMITTER VOLTAGE (V)
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
200
15
ICE , COLLECTOR TO EMITTER CURRENT (A)
TJ = 125oC, L = 500µH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
10
ICE = 30A
1
ICE = 20A
ICE = 10A
0.1
3
10
100
1000
RG, GATE RESISTANCE (Ω)
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
HGTG20N60A4D, HGT4E20N60A4DS Rev. C
HGTG20N60A4D, HGT4E20N60A4DS
Unless Otherwise Specified (Continued)
5
FREQUENCY = 1MHz
C, CAPACITANCE (nF)
4
3
CIES
2
1
COES
CRES
0
0
20
40
60
80
100
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Typical Performance Curves
2.2
DUTY CYCLE < 0.5%, TJ = 25oC
PULSE DURATION = 250µs
2.1
2.0
ICE = 30A
ICE = 20A
1.9
1.8
1.7
ICE = 10A
8
9
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
11
13
12
14
15
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
30
90
DUTY CYCLE < 0.5%,
PULSE DURATION = 250µs
dIEC/dt = 200A/µs
80
trr , RECOVERY TIMES (ns)
25
20
125oC
15
25oC
10
5
125 oC trr
70
125 oC tb
60
125oC ta
50
40
30
25oC trr
20
25oC ta
10
0
0
0.5
1.0
1.5
2.0
2.5
0
3.0
25 oC tb
4
0
8
IEC = 20A, VCE = 390V
40
125oC ta
30
125 oC tb
20
25oC ta
10
0
200
25 oC tb
300
400
500
600
700
800
900
1000
diEC/dt, RATE OF CHANGE OF CURRENT (A/µs)
FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF
CURRENT
©2002 Fairchild Semiconductor Corporation
20
FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT
Qrr, REVERSE RECOVERY CHARGE (nC)
FIGURE 19. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
50
16
12
IEC , FORWARD CURRENT (A)
VEC , FORWARD VOLTAGE (V)
trr, RECOVERY TIMES (ns)
16
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
IEC , FORWARD CURRENT (A)
10
800
VCE = 390V
125oC, IEC = 20A
600
125oC, I EC = 10A
400
25 oC, IEC = 20A
200
25 oC, IEC = 10A
0
200
300
400
500
600
700
800
900
1000
diEC/dt, RATE OF CHANGE OF CURRENT (A/µs)
FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF
CURRENT
HGTG20N60A4D, HGT4E20N60A4DS Rev. C
HGTG20N60A4D, HGT4E20N60A4DS
ZθJC , NORMALIZED THERMAL RESPONSE
Typical Performance Curves
Unless Otherwise Specified (Continued)
10 0
0.5
0.2
10-1
0.1
0.05
0.02
0.01
10-2
t1
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
SINGLE PULSE
10-5
10 -4
10-3
10 -2
PD
t2
10 -1
100
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
HGTG20N60A4D
DIODE TA49372
90%
10%
VGE
EON2
EOFF
L = 500µH
VCE
RG = 3Ω
90%
DUT
+
-
ICE
VDD = 390V
FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT
©2002 Fairchild Semiconductor Corporation
10%
td(OFF)I
tfI
trI
td(ON)I
FIGURE 25. SWITCHING TEST WAVEFORMS
HGTG20N60A4D, HGT4E20N60A4DS Rev. C
HGTG20N60A4D, HGT4E20N60A4DS
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows fMAX1 or fMAX2; whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of VGEM . Exceeding the rated VGE can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
©2002 Fairchild Semiconductor Corporation
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. td(OFF)I and td(ON)I are defined in Figure 25.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJM . td(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The
allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC.
The sum of device switching and conduction losses must not
exceed PD . A 50% duty factor was used (Figure 3) and the
conduction losses (P C) are approximated by
PC = (VCE x ICE)/2.
EON2 and E OFF are defined in the switching waveforms
shown in Figure 25. E ON2 is the integral of the
instantaneous power loss (ICE x VCE) during turn-on and
EOFF is the integral of the instantaneous power loss
(ICE x VCE) during turn-off. All tail losses are included in the
calculation for EOFF; i.e., the collector current equals zero
(ICE = 0).
HGTG20N60A4D, HGT4E20N60A4DS Rev. C
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E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST â
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
I2C™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC â
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench â
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER â UHC™
SMART START™
UltraFET â
SPM™
VCX™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H5
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